Formation of High-Quality Si/CoSi2/Si Double Hetero-Structures by Self-Aligned and Two-Step Molecular Beam Epitaxy
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AbstractThe formation and application of Si/CoSi2/Si double heterostructures are comprehensively studied. A high-quality double heterostructure is formed by two-step molecular beam epitaxy of the Si over layer, i.e., low -temperature growth followed by high-temperature growth. The interfaces between CoSi2 and Si observed by cross-sectional transmission microscopy are atomically abrupt and smooth. In addition, a new fine patterning method of CoSi2 films using self-aligned and selective growth is developed. Finally, permeable base transistors (PBT) with high performance (gm=50 mS /mm) are fabricated using these new techniques.
2011 ◽
Vol 85
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pp. 737-743
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pp. 4104-4109
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Vol 67
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pp. 80-87
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pp. 572
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pp. 1064
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1990 ◽
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pp. 1264
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