The influence of temperature gradient and lowering speed on the melt–solid interface shape of GaxIn1−xSb alloy crystals grown by vertical Bridgman technique

1999 ◽  
Vol 203 (3) ◽  
pp. 333-339 ◽  
Author(s):  
N.K. Udayashankar ◽  
K. Gopalakrishna Naik ◽  
H.L. Bhat
Keyword(s):  
Temperature Gradient ◽  
Interface Shape ◽  
Bridgman Technique ◽  
Influence Of Temperature ◽  
Solid Interface ◽  
Vertical Bridgman

Mathematical Model for the Simulation of Crystallization of CdTe in a vertical Bridgman Furnace.

1993 ◽  
Vol 302 ◽  
Author(s):  
Ch. Steer ◽  
M. Hage-Ali ◽  
P. Siffert
Keyword(s):  
Mathematical Model ◽  
Crystal Growth ◽  
Temperature Distribution ◽  
Temperature Gradient ◽  
Thermal Conditions ◽  
Single Crystal Growth ◽  
Interface Shape ◽  
Bulk Growth ◽  
Controlling Parameter ◽  
Vertical Bridgman

ABSTRACTTemperature measurements in a crystal growth ampoule of CdTe (Cadmium Telluride) are very difficult. Mathematical simulation is a very powerful tool to predict the behavior and temperature distribution during crystal growth. We applied this technique to the bulk growth of large single crystals of CdTe. The simulation revealed that for CdTe, it is possible to create a convex interface shape during growth, necessary for single crystal growth. The controlling parameter is the temperature profile along the ampoule. The temperature gradient is rather meaningless, as we can show with our simulations.We will present some crystals grown under good and bad thermal conditions.

A Molecular Dynamics Study on Effects of Nanostructural Clearances at an Interface on Thermal Resistance

2008 ◽  
Author(s):  
Masahiko Shibahara ◽  
Kosuke Inoue ◽  
Kiyomori Kobayashi
Keyword(s):  
Molecular Dynamics ◽  
Temperature Gradient ◽  
Thermal Resistance ◽  
Solid Wall ◽  
Middle Layer ◽  
Dynamics Simulation ◽  
Nanometer Scale ◽  
Liquid Density ◽  
Solid Interface ◽  
Solid Walls

The classical molecular dynamics simulation was conducted in order to clarify the effects of structural clearances in nanometer scale on thermal resistance at a liquid-solid interface. A liquid molecular region confined between the solid walls, of which the interparticle potential was Lennard-Jones type, was employed as a calculation system. The solid walls consisted of three atomic layers where the temperature of the middle layer was controlled by the Langevin method. Heat flux in the system was calculated numerically by integrating the forces that acted on the temperature controlled atoms by the Langevin method. The temperature jump between the solid wall and the liquid molecular region was calculated numerically. The thermal resistance at a liquid-solid interface was calculated numerically with changing the surface structural clearances in nanometer scale. Temperature gradient and liquid density were also changed as calculation parameters. With changing the surface structural clearances from 0nm to 2.5nm the thermal resistance at the interface once decreased and became the minimum value when the structural clearances were between 0.6 to 1.0 nm. The thermal resistance between the solid and the liquid increased when the structural clearances were more than 1.0nm. With the increase of the liquid density the thermal resistance between the solid and the liquid substantially decreased regardless of the temperature gradient and the surface structures in nanometer scale.

Interface shape and distribution of solute during vertical Bridgman growth of Al–Cu alloy

2002 ◽  
Vol 52 (4-5) ◽  
pp. 248-254 ◽  
Author(s):  
V Radojević ◽  
A Valc̆ić ◽  
S Nikolić
Keyword(s):  
Interface Shape ◽  
Bridgman Growth ◽  
Cu Alloy ◽  
Vertical Bridgman

Layered Compound Semiconductor GaSe and GaTe Crystals for THz Applications

2006 ◽  
Vol 969 ◽  
Author(s):  
Krishna C. Mandal ◽  
Sung H. Kang ◽  
Michael K. Choi
Keyword(s):  
Wide Band ◽  
Optical Quality ◽  
Layered Compound ◽  
Bridgman Technique ◽  
Wide Band Gap ◽  
Long Term Stability ◽  
Vertical Bridgman ◽  
Thz Applications ◽  
Good Optical Quality

AbstractThe single crystal growth of layered semiconductors GaSe and GaTe by vertical Bridgman technique using zone refined selenium (Se), tellurium (Te) and high purity (HP) gallium (Ga) have been described. The grown crystals (2.5 cm diameter and ∼10 cm long) have demonstrated efficient broadband tunable THz emission and as sensitive THz detectors. The crystals have shown promising characteristics with good optical quality, high dark resistivity, wide band gap (GaSe-2.01 eV and GaTe-1.66 eV at 300 K), good anisotropic (parallel, p & perpendicular, pa) electrical properties (σ∥ vs σ⊥ and μ∥ vs σ⊥) and long term stability. Different steps involved in processing GaSe and GaTe crystals as THz sources and sensors are described.

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