Photoemission Results for Laser-Annealed Si(111) and Ge(111) Surfaces

1981 ◽  
Vol 4 ◽  
Author(s):  
F.J. Himpsel ◽  
D.E. Eastman ◽  
P. Heimann ◽  
B. Reihl ◽  
C.W. White ◽  
...  
Keyword(s):  
High Resolution ◽  
Synchrotron Radiation ◽  
Valence Band ◽  
Surface States ◽  
Core Level ◽  
Characteristic Surface ◽  
Local Bonding

ABSTRACTWe have studied the valence band and surface-core-level states for laser-annealed, thermally-annealed, and cleaved Ge(111) and Si(l11) surfaces with high resolution photoelectronspectroscopy using synchrotron radiation. For the annealed surfaces we find two surface states near the top of the valence band as well as characteristic surface core level spectra. These indicate the existence of a common local bonding geometry for all these surfaces. We observe that the (1 × 1) and cleaved (2 × 1) surfaces are not related as recently reported for Si.

Oxidized silicon surfaces studied by high resolution Si 2p core-level photoelectron spectroscopy using synchrotron radiation

2001 ◽  
Vol 280 (1-3) ◽  
pp. 150-155 ◽  
Author(s):  
Florence Jolly ◽  
François Rochet ◽  
Georges Dufour ◽  
Christoph Grupp ◽  
Amina Taleb-Ibrahimi
Keyword(s):  
High Resolution ◽  
Synchrotron Radiation ◽  
Photoelectron Spectroscopy ◽  
Core Level ◽  
Silicon Surfaces

Adsorption of water on Si(001)-2 × 1 and Si(111)-7 × 7 surfaces at 90 and 300 K: A Si 2p core-level and valence band study with synchrotron radiation

1995 ◽  
Vol 338 (1-3) ◽  
pp. 143-156 ◽  
Author(s):  
Christine Poncey ◽  
François Rochet ◽  
Georges Dufour ◽  
Henri Roulet ◽  
Fausto Sirotti ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Valence Band ◽  
Core Level ◽  
Adsorption Of Water

High-resolution synchrotron-radiation core-level spectroscopy of decapped GaAs(100) surfaces

1991 ◽  
Vol 43 (17) ◽  
pp. 14301-14304 ◽  
Author(s):  
G. Le Lay ◽  
D. Mao ◽  
A. Kahn ◽  
Y. Hwu ◽  
G. Margaritondo
Keyword(s):  
High Resolution ◽  
Synchrotron Radiation ◽  
Core Level

Oxidation of the H-Si(111)-1×1 surface: high resolution Si 2p core-level spectroscopy with synchrotron radiation

2000 ◽  
Vol 463 (2) ◽  
pp. 102-108 ◽  
Author(s):  
Florence Jolly ◽  
François Rochet ◽  
Georges Dufour ◽  
Christoph Grupp ◽  
Amina Taleb-Ibrahimi
Keyword(s):  
High Resolution ◽  
Synchrotron Radiation ◽  
Core Level

Composition and Structure of β-SiC(100)-(2 × 2) Surfaces Monitored by Photoemission Spectroscopy using Synchrotron Radiation

1998 ◽  
Vol 05 (01) ◽  
pp. 213-217 ◽  
Author(s):  
L. Douillard ◽  
F. Semond ◽  
P. Soukiassian ◽  
D. Dunham ◽  
F. Amy ◽  
...  
Keyword(s):  
Synchrotron Radiation ◽  
Experimental Evidence ◽  
Valence Band ◽  
Surface Reconstruction ◽  
Core Level ◽  
Single Domain ◽  
Photoemission Spectroscopy ◽  
Spectral Features ◽  
Composition And Structure ◽  
Level Shifts

We investigate the single domain β-SiC(100)-(2 × 1) surface reconstruction by core level and valence band photoemission spectroscopies using synchrotron radiation. Specific spectral features at the Si 2p and C 1s core levels including bulk and surface core level shifts, and in the valence band, bring experimental evidence of reproducible β-SiC(100)-(2 × 1) structures having different Si/C compositions ranging from Si-terminated to Si- + C-containing surfaces.

OXIDATION OF Nb(001) STUDIED BY HIGH-RESOLUTION CORE-LEVEL PHOTOEMISSION

1997 ◽  
Vol 04 (04) ◽  
pp. 651-654 ◽  
Author(s):  
W.-S. LO ◽  
H.-H. CHEN ◽  
T.-S. CHIEN ◽  
C.-C. TSAN ◽  
B.-S. FANG
Keyword(s):  
High Resolution ◽  
Synchrotron Radiation ◽  
High Temperatures ◽  
Annealing Temperature ◽  
Ultrahigh Vacuum ◽  
Refractory Metals ◽  
Vacuum Condition ◽  
Core Level

Using high-resolution core-level photoemission with synchrotron radiation, we observed two suboxide states on the Nb(001) surface, which was heated in 1×10-6 Torr O 2 for several hours and then annealed several times at high temperatures in an ultrahigh-vacuum condition. These suboxide states were identified as Nb2O and NbO from the Nb3d5/2 core-level photoemission spectra. The relative amounts of these suboxide states varied with the annealing temperature, showing that at progressively higher temperatures more oxygen-deficient oxides were produced. Meanwhile, LEED patterns of the complex superstructures of the oxidized surfaces also changed. Many of these findings are analogous with other oxidized refractory metals.

Valence Band Alignment of Ultra-Thin SiO2/Si Interfaces As Determined By High Resolution X-Ray Photoelectron Spectroscopy

1995 ◽  
Vol 386 ◽  
Author(s):  
J. L. Alay ◽  
M. Fukuda ◽  
C. H. Bjorkman ◽  
K. Nakagawa ◽  
S. Sasaki ◽  
...  
Keyword(s):  
High Resolution ◽  
Valence Band ◽  
Density Of States ◽  
Photoelectron Spectroscopy ◽  
Oxide Thickness ◽  
Core Level ◽  
Band Alignment ◽  
X Ray ◽  
Charging Effect

ABSTRACTUltra-thin SiO2/Si(111) interfaces have been studied by high resolution x-ray photoelectron spectroscopy. The deconvolution of the Si 2p core-level peak reveals the presence of the suboxide states Si3+ and Si1+ and the nearly complete absence of Si2+. The energy shifts found in the Si 2p and O is core-level peaks arising from charging effects arc carefully corrected. The valence band density of states for ultra-thin (1.8 - 3.7 nm thick) SiO2 is obtained by subtracting the bulk Si contribution from the measured spcctrum and by taking into account the charging effect of SiO2 and bulk Si. Thus obtained valence band alignment of ultra-thin SiO2/Si(111) interfaces is found to be 4.36 ± 0.10 eV regardless of oxide thickness.

Core level and valence band investigation of WO3 thin films with synchrotron radiation

2003 ◽  
Vol 436 (1) ◽  
pp. 9-16 ◽  
Author(s):  
L. Ottaviano ◽  
F. Bussolotti ◽  
L. Lozzi ◽  
M. Passacantando ◽  
S. La Rosa ◽  
...  
Keyword(s):  
Thin Films ◽  
Synchrotron Radiation ◽  
Valence Band ◽  
Core Level ◽  
Wo3 Thin Films
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