Substrate temperature effects on the growth and properties of γ-MnS thin films grown by rf sputtering

2002 ◽  
Vol 37 (10) ◽  
pp. 1749-1754 ◽  
Author(s):  
I Oidor-Juárez ◽  
P Garcı́a-Jiménez ◽  
G Torres-Delgado ◽  
R Castanedo-Pérez ◽  
O Jiménez-Sandoval ◽  
...  
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Temperature Effects ◽  
Rf Sputtering

Optical Properties of NiO Thin Films: A Potential Material for Optoelectronic Devices

2012 ◽  
Vol 488-489 ◽  
pp. 103-108 ◽  
Author(s):  
Manisha Tyagi ◽  
Monika Tomar ◽  
Vinay Gupta
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Band Gap ◽  
Urbach Energy ◽  
Rf Sputtering ◽  
Blue Shift ◽  
Structural Disorder ◽  
Near Ir

The influence of substrate temperature on the UV-Visible-near-IR optical properties, namely the band gap, the Urbach energy and the refractive index of NiO thin films deposited by RF sputtering has been investigated. The optical band gap of thin films showed the blue-shift in the transmission spectra with increase in the substrate temperature which is related to variation in carrier concentration of the deposited films. Urbach energy (EU) values indicate that the films deposited at 400 oC substrate temperature show least structural disorder. The refractive index of the films is found to decrease continuously with increase in the substrate temperature at all photon energies in the visible and near-IR region, and is attributed to the decreasing packing density of the films. Introduction

Crystallographic Texture of MgO and its Effect on the Growth of BaTiO3 Thin Films by RF Sputtering

2007 ◽  
Vol 546-549 ◽  
pp. 2175-2178
Author(s):  
Liang Qiao ◽  
Xiao Fang Bi
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Crystallographic Texture ◽  
Great Influence ◽  
Rf Sputtering ◽  
Rf Magnetron Sputtering ◽  
High Substrate Temperature ◽  
Argon Pressure ◽  
Structure And Microstructure ◽  
Deposition Conditions

In this work, MgO thin films were prepared by rf magnetron sputtering technique on two different substrates of Si (100) wafers and amorphous glasses. The influence of different deposition conditions such as substrate temperature, Ar pressure, film thicknesses on the crystal structure of MgO thin films were studied. BaTiO3 ferroelectric thin films were subsequently deposited on the MgO films. The XRD results showed that the orientation of MgO films was dependent greatly on the substrate temperature. A highly (100) oriented MgO thin films were obtained at the temperature of 800°C. The crystallographic texture has been deteriorated rapidly as the argon pressure decreased to 1.0 Pa. It has been also found that the film thickness has a great influence on the film orientation. High substrate temperature, high argon pressure and a certain thickness appear to be favorable for formation of a good texture for the MgO films. The structure and microstructure of the BaTiO3 films were various both with deposition conditions and with the crystallographic texture of the MgO. A highly (001) oriented ferroelectric BTO film was obtained on the MgO films with an optimized deposition conditions.

Substrate Temperature Effects on the Properties of Radio Frequency-Sputtered SnS Thin Films

2018 ◽  
Vol 10 (5) ◽  
pp. 696-702 ◽  
Author(s):  
Donghyun Hwang ◽  
Jin-Yong Shin ◽  
Sunmook Lee ◽  
Joo Hyung Park ◽  
Chang-Sik Son
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Temperature Effects ◽  
Sns Thin Films

Process-dependent Coercive Fields in Undoped and Mn-doped BiFeO3 Films Formed on SrRuO3/Pt(111) Electrodes by rf Sputtering

2009 ◽  
Vol 1199 ◽  
Author(s):  
Jeong Hwan Kim ◽  
Hiroshi Funakubo ◽  
Yoshihiro Sugiyama ◽  
Hiroshi Ishiwara
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Radio Frequency ◽  
Coercive Field ◽  
Remanent Polarization ◽  
Rf Sputtering ◽  
Mn Doped

AbstractWe deposited BiFeO3 (BFO) thin films on SrRuO3 (SRO)/Pt bottom electrodes by radio-frequency (RF) sputtering. Some samples were formed at the substrate temperature of 550 °C, and others were foremed at 450 °C and post-annealed at 650°C for crystallization. The coercive field in the post-annealed BFO film was smaller than that in the 550°C-deposited BFO film. The coercive field in Mn-doped BiFeO3 (BFMO) films which were deposited at 550 ˚C on SRO/Pt(111) was lower than that in undoped BFO films. Degradation of the remanent polarization was less significant in the post-annealed BFO film.

Substrate temperature effects on the microhardness and adhesion of diamond-like thin films

1999 ◽  
Vol 8 (2-5) ◽  
pp. 563-566 ◽  
Author(s):  
E Martinez ◽  
M.C Polo ◽  
E Pascual ◽  
J Esteve
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Temperature Effects

Effect of substrate temperature on properties of thin films prepared by RF sputtering from CuInSe2 target with Na2Se

1999 ◽  
Vol 343-344 ◽  
pp. 320-323 ◽  
Author(s):  
Tooru Tanaka ◽  
Toshiyuki Yamaguchi ◽  
Akihiro Wakahara ◽  
Akira Yoshida
Keyword(s):  
Thin Films ◽  
Substrate Temperature ◽  
Rf Sputtering

The Effect of Substrate Temperatures on the Structural and Optical Properties of Cosputtered ZnO and AlN Thin Films

2012 ◽  
Vol 626 ◽  
pp. 25-28 ◽  
Author(s):  
A. Ismail ◽  
Mat Johar Abdullah
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Substrate Temperature ◽  
Rf Sputtering ◽  
Band Gaps ◽  
Zno Thin Films ◽  
Visible Range ◽  
Structural And Optical Properties ◽  
Doped Zno ◽  
Substrate Temperatures

AlN doped ZnO thin films were prepared on glass and Si (100) substrates by RF sputtering. For AlN doped ZnO at RF powers of 200 W (ZnO target) and 200W (AlN target), the ZnO (002) peak showed the highest intensity at the substrate temperature of 400˚ C. The prepared films showed good transmission of above 72 % in the visible range. The calculated values of energy band gaps were in the range (3.42 eV - 3.54 eV) for the films prepared at different substrate temperatures.

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