The peculiarities of mechanical bending of silicon wafers after diverse manufacturing operations

In this work As doped polysilicon was deposited onto (100) silicon wafers by APCVD at 660°C from a silane-arsine mixture, followed by a ten minute anneal at 1000°C, and in one case a further ten minute anneal at 700°C. Specimens for TEM and STEM analysis were prepared by chemical polishing. The microstructure, which is unchanged by the final 700°C anneal,is shown in Figure 1. It consists of numerous randomly oriented grains many of which contain twins.X-ray analysis was carried out in a VG HB5 STEM. As K α x-ray counts were collected from STEM scans across grain and twin boundaries, Figures 2-4. The incident beam size was about 1.5nm in diameter, and each of the 20 channels in the plots was sampled from a 1.6nm length of the approximately 30nm line scan across the boundary. The bright field image profile along the scanned line was monitored during the analysis to allow correlation between the image and the x-ray signal.

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Preparation of integrated circuits for TEM electromigration in situ studies

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100145753 ◽

1986 ◽

Vol 44 ◽

pp. 882-883

Author(s):

J. V. Maskowitz ◽

W. E. Rhoden ◽

D. R. Kitchen ◽

R. E. Omlor ◽

P. F. Lloyd

Keyword(s):

Integrated Circuits ◽

Crystallographic Orientation ◽

Silicon Wafers ◽

Minimum Size ◽

Test Vehicle ◽

In Situ Studies ◽

Boron Doped ◽

Doped Silicon ◽

Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

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Low temperature drive-in of surface-deposited copper in silicon wafers

The European Physical Journal Applied Physics ◽

10.1051/epjap:2004138 ◽

2004 ◽

Vol 27 (1-3) ◽

pp. 435-438 ◽

Cited By ~ 3

Author(s):

M. L. Polignano ◽

D. Caputo ◽

C. Carpanese ◽

G. Salvà ◽

L. Vanzetti

Keyword(s):

Low Temperature ◽

Silicon Wafers

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Recombination Characteristics of Single-Crystalline Silicon Wafers with a Damaged Near-Surface Layer

Ukrainian Journal of Physics ◽

10.15407/ujpe58.02.0142 ◽

2013 ◽

Vol 58 (2) ◽

pp. 142-150 ◽

Cited By ~ 1

Author(s):

A.V. Sachenko ◽

◽

V.P. Kostylev ◽

V.G. Litovchenko ◽

V.G. Popov ◽

...

Keyword(s):

Surface Layer ◽

Crystalline Silicon ◽

Silicon Wafers ◽

Single Crystalline Silicon ◽

Near Surface ◽

Single Crystalline

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INFLUENCE OF RAPID THERMAL TREATMENT OF INITIAL SILICON WAFERS ON THE ELECTROPHYSICAL PROPERTIES OF SILICON DIOXIDE OBTAINED BY PYROGENOUS OXIDATION

High Temperature Material Processes An International Quarterly of High-Technology Plasma Processes ◽

10.1615/hightempmatproc.2019031122 ◽

2019 ◽

Vol 23 (3) ◽

pp. 283-290

Author(s):

Vladimir A. Pilipenko ◽

Vitaly A. Solodukha ◽

Anatoly Zharin ◽

Oleg Gusev ◽

Roman Vorobey ◽

...

Keyword(s):

Thermal Treatment ◽

Silicon Dioxide ◽

Silicon Wafers ◽

Electrophysical Properties ◽

Initial Silicon

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Optical sensors for alignment, distance measurement, and feature location in automated manufacturing operations

International Congress on Applications of Lasers & Electro-Optics ◽

10.2351/1.5058049 ◽

1988 ◽

Author(s):

Warren H. Stevenson

Keyword(s):

Optical Sensors ◽

Distance Measurement ◽

Automated Manufacturing ◽

Feature Location ◽

Manufacturing Operations

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Development of corrosion flaws for the production of realistic test specimens

Koroze a ochrana materialu ◽

10.2478/kom-2020-0004 ◽

2020 ◽

Vol 64 (1) ◽

pp. 23-28

Author(s):

J. Hodač ◽

Z. Fulín ◽

P. Mareš ◽

J. Veselá ◽

O. Chocholatý

Keyword(s):

Power Plants ◽

Galvanic Corrosion ◽

Water Solution ◽

Erosive Wear ◽

Corrosion Damage ◽

Water Mist ◽

Carbon Steels ◽

Bending Stress ◽

Solution Flow ◽

Mechanical Bending

AbstractTo produce realistic test specimens with realistic flaws, it is necessary to develop appropriate procedure for corrosion flaw production. Tested specimens are made from steels commonly used in power plants, such as carbon steels, stainless steels and their dissimilar weldments. In this study, corrosion damage from NaCl water solution and NaCl water mist are compared. Specimens were tested with and without mechanical bending stress. The corrosion processes produced plane, pitting and galvanic corrosion. On dissimilar weldments galvanic corrosion was observed and resulted to the deepest corrosion damage. Deepest corrosion flaws were formed on welded samples. The corrosion rate was also affected by the solution flow in a contact with the specimens, which results in a corrosion-erosive wear. Produced flaws are suitable as natural crack initiators or as realistic corrosion flaws in test specimens.

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