Gate-voltage limitations for thin channel MIS and Schottky buried-channel charge-coupled devices

1983 ◽  
Vol 14 (4) ◽  
pp. 63-64
Keyword(s):  
Gate Voltage ◽  
Buried Channel ◽  
Thin Channel ◽  
Charge Coupled Devices

A New 4H-SiC MESFET Utilizing N- Shielding and Field Plate Techniques Simultaneously

2010 ◽  
Vol 148-149 ◽  
pp. 1182-1187 ◽  
Author(s):  
Hu Jun Jia ◽  
Yin Tang Yang ◽  
Chang Chun Chai
Keyword(s):  
Power Density ◽  
Gate Voltage ◽  
Power Gain ◽  
Pulse Operation ◽  
New Techniques ◽  
Power Added Efficiency ◽  
Field Plate ◽  
Buried Channel ◽  
Actual Operating ◽  
Rf Performance

Some new techniques include n- shielding, buried channel and field plate are firstly adopted together for design and fabrication of 4H-SiC microwave MESFETs. The testing results show that a relatively broad and uniform transconductance versus gate voltage was obtained using a 0.1m n- shielding. 0.3mm gate periphery device shows good DC and RF performance such as 5.27W/mm power density, 6.7dB power gain and 43% power added efficiency at 2.3GHz under pulse operation. Compared to conventional SiC MESFETs, a gate lag ratio as high as 0.84 can be achieved for the developed devices even under a nearly actual operating condition.

scholarly journals On the charge-handling capacity of epitaxial and ion-implanted GaAs buried channel charge-coupled devices

1986 ◽  
Vol 21 (6) ◽  
pp. 349-356
Author(s):  
D. Rigaud ◽  
D. Sodini ◽  
K. Torbati ◽  
A. Touboul ◽  
R. Poirier
Keyword(s):  
Buried Channel ◽  
Charge Coupled Devices ◽  
Ion Implanted

Noise in buried channel charge-coupled devices

1976 ◽  
Vol 23 (2) ◽  
pp. 215-223 ◽  
Author(s):  
R.W. Brodersen ◽  
S.P. Emmons
Keyword(s):  
Buried Channel ◽  
Charge Coupled Devices

Low-temperature characteristics of buried channel charge-coupled devices

1986 ◽  
Vol 69 (8) ◽  
pp. 30-39
Author(s):  
Masafumi Kimata ◽  
Masahiko Denda ◽  
Naoki Yutani ◽  
Syuhei Iwade ◽  
Natsuro Tsubouchi
Keyword(s):  
Low Temperature ◽  
Temperature Characteristics ◽  
Buried Channel ◽  
Charge Coupled Devices
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