A dual-gate shorted-anode silicon-on-insulator lateral insulated gate bipolar transistor with floating ohmic contact for suppressing snapback and fast switching characteristics

1999 ◽  
Vol 30 (6) ◽  
pp. 577-581
Author(s):  
J.K Oh ◽  
D.Y Kim ◽  
B.H Lee ◽  
D.S Byeon ◽  
M.K Han ◽  
...  
Keyword(s):  
Ohmic Contact ◽  
Bipolar Transistor ◽  
Silicon On Insulator ◽  
Insulated Gate Bipolar Transistor ◽  
Fast Switching ◽  
Dual Gate ◽  
Switching Characteristics

Switching characteristics of a 4H-SiC insulated-gate bipolar transistor with interface defects up to the nonquasi-static regime

2015 ◽  
Vol 54 (4S) ◽  
pp. 04DP11 ◽  
Author(s):  
Iliya Pesic ◽  
Dondee Navarro ◽  
Masato Fujinaga ◽  
Yoshiharu Furui ◽  
Mitiko Miura-Mattausch
Keyword(s):  
Bipolar Transistor ◽  
Insulated Gate Bipolar Transistor ◽  
Interface Defects ◽  
Static Regime ◽  
Switching Characteristics

A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pitch

2013 ◽  
Vol 22 (2) ◽  
pp. 027303 ◽  
Author(s):  
Xiao-Rong Luo ◽  
Qi Wang ◽  
Guo-Liang Yao ◽  
Yuan-Gang Wang ◽  
Tian-Fei Lei ◽  
...  
Keyword(s):  
High Voltage ◽  
Bipolar Transistor ◽  
Silicon On Insulator ◽  
Insulated Gate Bipolar Transistor

A Trench-Gate Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor with thep+Cathode Well

1995 ◽  
Vol 34 (Part 1, No. 2B) ◽  
pp. 854-859 ◽  
Author(s):  
Byeong-Hoon Lee ◽  
Chong-Man Yun ◽  
Dae-Seok Byeon ◽  
Min-Koo Han ◽  
Yearn-Ik Choi
Keyword(s):  
Bipolar Transistor ◽  
Silicon On Insulator ◽  
Insulated Gate Bipolar Transistor
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