NPN aided fast switching insulated gate bipolar transistor with a p-buffer layer

IEICE Electronics Express ◽

10.1587/elex.11.20140294 ◽

2014 ◽

Vol 11 (13) ◽

pp. 20140294-20140294

Author(s):

Chunzao Wang ◽

Bin Zhang

Keyword(s):

Buffer Layer ◽

Bipolar Transistor ◽

Insulated Gate Bipolar Transistor ◽

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A dual-gate shorted-anode silicon-on-insulator lateral insulated gate bipolar transistor with floating ohmic contact for suppressing snapback and fast switching characteristics

Microelectronics Journal ◽

10.1016/s0026-2692(98)00181-5 ◽

1999 ◽

Vol 30 (6) ◽

pp. 577-581

Author(s):

J.K Oh ◽

D.Y Kim ◽

B.H Lee ◽

D.S Byeon ◽

M.K Han ◽

...

Keyword(s):

Ohmic Contact ◽

Bipolar Transistor ◽

Silicon On Insulator ◽

Insulated Gate Bipolar Transistor ◽

Fast Switching ◽

Dual Gate ◽

Switching Characteristics

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A Performance Trade-Off for the Insulated Gate Bipolar Transistor: Buffer Layer Versus Base Lifetime Reduction

IEEE Transactions on Power Electronics ◽

10.1109/tpel.1987.4766360 ◽

1987 ◽

Vol PE-2 (3) ◽

pp. 194-207 ◽

Author(s):

Allen R. Hefner ◽

David L. Blackburn

Keyword(s):

Buffer Layer ◽

Bipolar Transistor ◽

Layer Versus ◽

Trade Off ◽

Insulated Gate Bipolar Transistor ◽

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Measurements of the Breakdown Voltage of the Lateral Insulated Gate Bipolar Transistor on the Silicon-on-Insulator Film with Varying Implantation Doses for the N-Buffer Layer

Japanese Journal of Applied Physics ◽

10.1143/jjap.34.85 ◽

1995 ◽

Vol 34 (Part 1, No. 1) ◽

pp. 85-86

Author(s):

Hitoshi Sumida ◽

Atsuo Hirabayashi

Keyword(s):

Buffer Layer ◽

Breakdown Voltage ◽

Bipolar Transistor ◽

Silicon On Insulator ◽

Insulated Gate Bipolar Transistor ◽

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Performance trade-off for the Insulated Gate Bipolar Transistor: Buffer layer versus base lifetime reduction

1986 17th Annual IEEE Power Electronics Specialists Conference ◽

10.1109/pesc.1986.7415543 ◽

1986 ◽

Author(s):

Allen R. Hefner ◽

David L. Blackburn

Keyword(s):

Buffer Layer ◽

Bipolar Transistor ◽

Layer Versus ◽

Trade Off ◽

Insulated Gate Bipolar Transistor

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Analysis of dependence of dV CE/dt on turn-off characteristics with a 1200 V double-gate insulated gate bipolar transistor

Japanese Journal of Applied Physics ◽

10.35848/1347-4065/abd29f ◽

2021 ◽

Vol 60 (SB) ◽

pp. SBBD02

Author(s):

Yoko Iwakaji ◽

Tomoko Matsudai ◽

Tatsunori Sakano ◽

Kazuto Takao

Keyword(s):

Bipolar Transistor ◽

Double Gate ◽

Insulated Gate Bipolar Transistor

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Zero current switching performance of 1200 V PT-clustered insulated gate bipolar transistor

3rd IET International Conference on Power Electronics, Machines and Drives (PEMD 2006) ◽

10.1049/cp:20060149 ◽

2006 ◽

Author(s):

J.C. Nicholls ◽

M.R. Sweet ◽

E.M.S. Narayanan

Keyword(s):

Bipolar Transistor ◽

Current Switching ◽

Insulated Gate Bipolar Transistor ◽

Switching Performance ◽

Zero Current Switching ◽

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Insights into radiation displacement defect in an insulated-gate bipolar transistor

AIP Advances ◽

10.1063/5.0041444 ◽

2021 ◽

Vol 11 (2) ◽

pp. 025137

Author(s):

Kihyun Kim ◽

Jungsik Kim

Keyword(s):

Bipolar Transistor ◽

Insulated Gate Bipolar Transistor

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Band-to-Band Tunneling Injection Insulated-Gate Bipolar Transistor with a Soft Reverse-Recovery Built-In Diode

IEEE Electron Device Letters ◽

10.1109/led.2012.2219612 ◽

2012 ◽

Vol 33 (12) ◽

pp. 1684-1686 ◽

Author(s):

Huaping Jiang ◽

Jin Wei ◽

Bo Zhang ◽

Wanjun Chen ◽

Ming Qiao ◽

...

Keyword(s):

Bipolar Transistor ◽

Insulated Gate Bipolar Transistor ◽

Band To Band Tunneling ◽

Tunneling Injection

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The separated shorted-anode insulated gate bipolar transistor with the suppressed negative differential resistance regime

Microelectronics Journal ◽

10.1016/s0026-2692(98)00180-3 ◽

1999 ◽

Vol 30 (6) ◽

pp. 571-575 ◽

Author(s):

D.S Byeon ◽

J.H Chun ◽

B.H Lee ◽

D.Y Kim ◽

M.K Han ◽

...

Keyword(s):

Negative Differential Resistance ◽

Differential Resistance ◽

Bipolar Transistor ◽

Insulated Gate Bipolar Transistor

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A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance

IEEE Electron Device Letters ◽

10.1109/led.2015.2426197 ◽

2015 ◽

Vol 36 (6) ◽

pp. 591-593 ◽

Author(s):

Hao Feng ◽

Wentao Yang ◽

Yuichi Onozawa ◽

Takashi Yoshimura ◽

Akira Tamenori ◽

...

Keyword(s):

Bipolar Transistor ◽

Insulated Gate Bipolar Transistor

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