Switching characteristics of a 4H-SiC insulated-gate bipolar transistor with interface defects up to the nonquasi-static regime

2015 ◽  
Vol 54 (4S) ◽  
pp. 04DP11 ◽  
Author(s):  
Iliya Pesic ◽  
Dondee Navarro ◽  
Masato Fujinaga ◽  
Yoshiharu Furui ◽  
Mitiko Miura-Mattausch
Keyword(s):  
Bipolar Transistor ◽  
Insulated Gate Bipolar Transistor ◽  
Interface Defects ◽  
Static Regime ◽  
Switching Characteristics

Switching characteristics of a 4H-SiC IGBT with interface defects up to the nonquasi-static regime

2014 ◽  
Author(s):  
I. Pesic ◽  
D. Navarro ◽  
M. Fujinaga ◽  
Y. Furui ◽  
M. Miura-Mattausch
Keyword(s):  
Interface Defects ◽  
Static Regime ◽  
Switching Characteristics

scholarly journals Study and Optimization of Field Limiting Rings for 10kV SiC Insulated Gate Bipolar Transistor

2021 ◽  
Author(s):  
Hongming Ma ◽  
Wenyuan Zhang ◽  
Yan Wang
Keyword(s):  
Silicon Carbide ◽  
Optimization Method ◽  
Bipolar Transistor ◽  
Surface Charges ◽  
Insulated Gate Bipolar Transistor ◽  
Fixed Ring ◽  
Interface Charges ◽  
Final Design ◽  
Conventional Structure ◽  
Switching Characteristics

Abstract A 10kV-level silicon carbide (SiC) insulated gate bipolar transistor (IGBT) with field limiting rings (FLRs) is designed and simulated with Sentaurus TCAD, the detailed optimization method and comparisons are presented in this paper. Linearly varying spacing between rings is introduced to SiC IGBT and adjustment is performed on width of rings, the final structure achieves a breakdown voltage over 12kV with a termination length of 164.5 µm , which is 69.93% lower than that of conventional structure with a fixed ring spacing. Moreover, the final design can decrease the sensitivity to the interface charges, the tolerance to positive surface charges exceeds 8 × 10 11 cm − 2 , which is 3.5 times that of the conventional structure. Besides, double pulse measurements prove no degradation of conduction and switching characteristics.

Band-to-Band Tunneling Injection Insulated-Gate Bipolar Transistor with a Soft Reverse-Recovery Built-In Diode

2012 ◽  
Vol 33 (12) ◽  
pp. 1684-1686 ◽  
Author(s):  
Huaping Jiang ◽  
Jin Wei ◽  
Bo Zhang ◽  
Wanjun Chen ◽  
Ming Qiao ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Insulated Gate Bipolar Transistor ◽  
Band To Band Tunneling ◽  
Tunneling Injection

A New Fin p-Body Insulated Gate Bipolar Transistor With Low Miller Capacitance

2015 ◽  
Vol 36 (6) ◽  
pp. 591-593 ◽  
Author(s):  
Hao Feng ◽  
Wentao Yang ◽  
Yuichi Onozawa ◽  
Takashi Yoshimura ◽  
Akira Tamenori ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Insulated Gate Bipolar Transistor
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