A New Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor and Lateral Diode Employing the Separated Schottky Anode for a Power Integrated Circuit

2007 ◽  
Vol 46 (4B) ◽  
pp. 2041-2045
Author(s):  
In-Hwan Ji ◽  
Young-Hwan Choi ◽  
Min-Woo Ha ◽  
Min-Koo Han
Energies ◽  
2020 ◽  
Vol 13 (12) ◽  
pp. 3033 ◽  
Author(s):  
Paweł Górecki ◽  
Krzysztof Górecki

This study proposes an electrothermal averaged model of the diode–transistor switch including insulated gate bipolar transistor (IGBT) and a rapid switching diode. The presented model has the form of subcircuits dedicated for simulation program with integrated circuit emphasis (SPICE) and it makes it possible to compute characteristics of DC–DC converters at the steady state considering self-heating phenomena, both in the diode and in IGBT. This kind of model allows computations of voltages, currents and internal temperatures of all used semiconductor devices at the steady state. The formulas used in this model are adequate for both: continuous conducting mode (CCM) and discontinuous conducting mode (DCM). Correctness of the proposed model is verified experimentally for a boost converter including IGBT. Good accuracy in modeling these converter characteristics is obtained.


2013 ◽  
Vol 22 (2) ◽  
pp. 027303 ◽  
Author(s):  
Xiao-Rong Luo ◽  
Qi Wang ◽  
Guo-Liang Yao ◽  
Yuan-Gang Wang ◽  
Tian-Fei Lei ◽  
...  

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