Properties of Lattice-matched and Strained Indium Gallium Arsenide by P. Bhattacharya (Ed.). London: INSPEC, the Institution of Electrical Engineers, ISBN 0-85296-865-5; Properties of Indium Phosphide, London: INSPEC, the Institution of Electrical Engineers, ISBN 0-85296-491-9; Properties of Aluminium Gallium Arsenide by S. Adachi (Ed.). London: INSPEC, the Institution of Electrical Engineers, ISBN 0-85296-558-3

Pallab Bhattacharya (ed.). Properties of lattice-matched and strained indium gallium arsenide. Electronic Materials Information Service, EMIS Datareviews Series No. 8 (Series Advisor: Dr. B. L. Weiss). INSPEC, the Institution of Electrical Engineers, Michael Farday House, Six Hills Way, Stevenage, Herts SG1 2AY, United Kingtom, 1993, 317 Seiten, zahlreiche Abbildungen und Tabellen, Quellennachweise, Sachwörterverzeichnis, ISBN 0-85296-865-5, Preis: 115 £

Crystal Research and Technology ◽

10.1002/crat.2170290523 ◽

1994 ◽

Vol 29 (5) ◽

pp. 702-702 ◽

Cited By ~ 2

Author(s):

V. Gottschalch

Keyword(s):

Gallium Arsenide ◽

Indium Gallium Arsenide ◽

Electronic Materials ◽

Information Service ◽

Electrical Engineers ◽

Indium Gallium ◽

Lattice Matched

Electroreflectance of indium gallium arsenide phosphide lattice matched to indium phosphide

Applied Physics Letters ◽

10.1063/1.91389 ◽

1980 ◽

Vol 36 (12) ◽

pp. 978-980 ◽

Cited By ~ 77

Author(s):

Ernesto H. Perea ◽

Emilio E. Mendez ◽

Clifton G. Fonstad

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Indium Gallium ◽

Lattice Matched

ChemInform Abstract: FABRICATION OF LOW DARK-CURRENT PLANAR PHOTODIODES USING AN OPEN-TUBE METHOD FOR ZINC DIFFUSION INTO INDIUM PHOSPHIDE AND INDIUM GALLIUM ARSENIDE (IN0.53GA0.47AS)

10.1002/chin.198444014 ◽

1984 ◽

Vol 15 (44) ◽

Author(s):

I. CAMLIBEL ◽

A. K. CHIN ◽

H. GUGGENHEIM ◽

S. SINGH ◽

L. G. VAN UITERT ◽

...

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Dark Current ◽

Open Tube ◽

Zinc Diffusion ◽

ChemInform Abstract: MATERIAL-SELECTIVE CHEMICAL ETCHING IN THE SYSTEM INDIUM GALLIUM ARSENIDE PHOSPHIDE/INDIUM PHOSPHIDE (INGAASP/INP)

10.1002/chin.197920013 ◽

1979 ◽

Vol 10 (20) ◽

Author(s):

S. B. PHATAK ◽

G. KELNER

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Chemical Etching ◽

Indium Gallium ◽

Selective Chemical ◽

Selective Chemical Etching

ChemInform Abstract: SUBSTRATE ORIENTATION DEPENDENCE OF GROWTH RATE OF INDIUM GALLIUM ARSENIDE/INDIUM PHOSPHIDE GROWN BY LIQUID PHASE EPITAXY

10.1002/chin.198311006 ◽

1983 ◽

Vol 14 (11) ◽

Author(s):

K. NAKAJIMA ◽

K. AKITA

Keyword(s):

Growth Rate ◽

Gallium Arsenide ◽

Liquid Phase ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Liquid Phase Epitaxy ◽

Orientation Dependence ◽

Substrate Orientation ◽

Enhanced indium phosphide substrate protection for liquid phase epitaxy growth of indium‐gallium‐arsenide‐phosphide double heterostructure lasers

Journal of Applied Physics ◽

10.1063/1.332107 ◽

1983 ◽

Vol 54 (2) ◽

pp. 535-539 ◽

Cited By ~ 25

Author(s):

P. Besomi ◽

R. B. Wilson ◽

W. R. Wagner ◽

R. J. Nelson

Keyword(s):

Gallium Arsenide ◽

Liquid Phase ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Liquid Phase Epitaxy ◽

Double Heterostructure ◽

Indium Gallium ◽

Substrate Protection

MOCVD of indium phosphide and indium gallium arsenide using trimethylindium-trimethylamine adducts

Journal of Crystal Growth ◽

10.1016/0022-0248(86)90031-x ◽

1986 ◽

Vol 75 (2) ◽

pp. 221-226 ◽

Cited By ~ 30

Author(s):

S.J. Bass ◽

M.S. Skolnick ◽

H. Chudzynska ◽

L. Smith

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

ChemInform Abstract: CHEMICAL ETCHING OF INDIUM GALLIUM ARSENIDE PHOSPHIDE/INDIUM PHOSPHIDE DH WAFER

10.1002/chin.198237350 ◽

1982 ◽

Vol 13 (37) ◽

Author(s):

S. ADACHI ◽

Y. NOGUCHI ◽

H. KAWAGUCHI

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Chemical Etching ◽

Highly ordered horizontal indium gallium arsenide/indium phosphide multi-quantum-well in wire structure on (001) silicon substrates

Journal of Applied Physics ◽

10.1063/1.4972481 ◽

2016 ◽

Vol 120 (24) ◽

pp. 245701 ◽

Cited By ~ 16

Author(s):

Yu Han ◽

Qiang Li ◽

Kei May Lau

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Quantum Well ◽

Indium Gallium Arsenide ◽

Silicon Substrates ◽

Indium Gallium ◽

Multi Quantum Well

ChemInform Abstract: GALLIUM CONTAMINATION OF INDIUM PHOSPHIDE EPITAXIAL LAYERS IN INDIUM PHOSPHIDE/INDIUM GALLIUM ARSENIDE PHOSPHIDE MULTILAYER STRUCTURES GROWN BY HYDRIDE TRANSPORT VAPOR PHASE EPITAXY

10.1002/chin.198538001 ◽

1985 ◽

Vol 16 (38) ◽

Author(s):

S. N. G. CHU ◽

F. A. STEVIE ◽

A. T. MACRANDER ◽

R. F. KARLICEK ◽

C. C. CHANG ◽

...

Keyword(s):

Gallium Arsenide ◽

Indium Phosphide ◽

Indium Gallium Arsenide ◽

Vapor Phase ◽

Vapor Phase Epitaxy ◽

Multilayer Structures ◽

Epitaxial Layers ◽