Acoustic phonon bottleneck in quantum dots: role of deformation variation of electron effective mass

2001 ◽  
Vol 117 (12) ◽  
pp. 713-717 ◽  
Author(s):  
V.I. Pipa ◽  
V.V. Mitin ◽  
M. Stroscio
Keyword(s):  
Quantum Dots ◽  
Effective Mass ◽  
Acoustic Phonon ◽  
Electron Effective Mass ◽  
Phonon Bottleneck

Breaking the phonon bottleneck in nanometer quantum dots: Role of Auger-like processes

1995 ◽  
Vol 93 (4) ◽  
pp. 281-284 ◽  
Author(s):  
Al. L. Efros ◽  
V.A. Kharchenko ◽  
M. Rosen
Keyword(s):  
Quantum Dots ◽  
Phonon Bottleneck

Phonon bottleneck in quantum dots: Role of lifetime of the confined optical phonons

1999 ◽  
Vol 59 (7) ◽  
pp. 5069-5073 ◽  
Author(s):  
Xin-Qi Li ◽  
Hajime Nakayama ◽  
Yasuhiko Arakawa
Keyword(s):  
Quantum Dots ◽  
Optical Phonons ◽  
Phonon Bottleneck

Si/SiO2 Quantum Dots: Electronic Properties

2009 ◽  
Vol 1208 ◽  
Author(s):  
Igor N Filikhin ◽  
Sergei G Matinyan ◽  
Branislav Vlahovic
Keyword(s):  
Quantum Dots ◽  
Effective Mass ◽  
Heavy Hole ◽  
Energy Levels ◽  
Coulomb Force ◽  
Recombination Energy ◽  
Electron Effective Mass ◽  
Model Calculations ◽  
Hole Energy ◽  
Si Quantum Dots

AbstractSpherical shaped Si quantum dots (QDs) embedded into the SiO2 substrate are considered in the single sub-band effective mass approach. The electron and heavy hole sub-bands are taken into account. The energy dependence of electron effective mass is applied especially for small size QD. Calculations of low-lying single electron and hole energy levels are performed. For QD of small sizes (diameter D≤6 nm) there is a strong confinement regime when the number of energy levels is restricted to several levels. The first order of the perturbation theory is used to calculate neutral exciton recombination energy taking into account the Coulomb force between electron and heavy hole. The PL exciton data are reproduced well by our model calculations. We also compare the results with those obtained within model [1]. For weak confinement regime (size D≥10 nm), when the number of confinement levels is limited by several hundred, we considered the statistical properties of the electron confinement. Distribution function for the electron levels is calculated and results are discussed.

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