The nature of optical transitions in Ga0.64In0.36As1−xNx/GaAs single quantum wells with low nitrogen content (x≤0.008)

2003 ◽  
Vol 127 (9-10) ◽  
pp. 613-618 ◽  
Author(s):  
R. Kudrawiec ◽  
G. Sęk ◽  
K. Ryczko ◽  
J. Misiewicz ◽  
P. Sundgren ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Nitrogen Content ◽  
Optical Transitions ◽  
Single Quantum ◽  
Low Nitrogen

scholarly journals Optical transitions in GaNAs quantum wells with variable nitrogen content embedded in AlGaAs

AIP Advances ◽  
2016 ◽  
Vol 6 (6) ◽  
pp. 065208 ◽  
Author(s):  
M. Elborg ◽  
T. Noda ◽  
T. Mano ◽  
Y. Sakuma
Keyword(s):  
Quantum Wells ◽  
Nitrogen Content ◽  
Optical Transitions

Optical Transitions in InGaPN/GaP Single Quantum Wells on GaP(100) Substrates by MOVPE

2007 ◽  
Vol 31 ◽  
pp. 224-226
Author(s):  
S. Sanorpim ◽  
D. Kaewket ◽  
Sukkaneste Tungasmita ◽  
R. Katayama ◽  
Kentaro Onabe
Keyword(s):  
Quantum Wells ◽  
Absorption Edge ◽  
Quantum Confinement Effect ◽  
Fundamental Absorption Edge ◽  
Blue Shift ◽  
Optoelectronic Device ◽  
Localized States ◽  
Bandgap Energy ◽  
Optical Transitions ◽  
Single Quantum

Optical transitions in the In0.050Ga0.950P0.975N0.025/GaP lattice-matched single quantum wells (SQWs) with different well widths (LZ = 1.6 - 6.4 nm) have been investigated by low-temperature photoluminescence (PL) and PL-excitation (PLE). PL spectra showed the strong visible emission from the samples which attracted to a variety of optoelectronic device applications such as light emitting and laser diodes. Comparing to the bulk film, the PL peak position and the fundamental absorption edge of PLE spectra exhibit blue-shift, which is corresponded to the quantum confinement effect by the well. Comparison between the absorption edge of PLE spectra and the finite square well calculation demonstrate that the effective bandgap energy of the InGaPN/GaP system is might be originated mainly from the N-related localized states.

scholarly journals Optical investigations of GaInNAs/GaAs multi-quantum wells with low nitrogen content

2002 ◽  
Vol 92 (3) ◽  
pp. 1380-1385 ◽  
Author(s):  
H. D. Sun ◽  
M. Hetterich ◽  
M. D. Dawson ◽  
A. Yu. Egorov ◽  
D. Bernklau ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Nitrogen Content ◽  
Low Nitrogen

Evolution of valence-band alignment with nitrogen content in GaNAs∕GaAs single quantum wells

2008 ◽  
Vol 93 (3) ◽  
pp. 031904 ◽  
Author(s):  
Jun Shao ◽  
Wei Lu ◽  
M. Sadeghi ◽  
Xiang Lü ◽  
S. M. Wang ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Nitrogen Content ◽  
Valence Band ◽  
Band Alignment ◽  
Single Quantum

scholarly journals Optical properties of c-Plane InGaN/GaN single quantum wells as a function of total electric field strength

2019 ◽  
Vol 58 (SC) ◽  
pp. SCCB09 ◽  
Author(s):  
George M. Christian ◽  
Stefan Schulz ◽  
Simon Hammersley ◽  
Menno J. Kappers ◽  
Martin Frentrup ◽  
...  
Keyword(s):  
Optical Properties ◽  
Field Strength ◽  
Electric Field ◽  
Quantum Wells ◽  
Electric Field Strength ◽  
Single Quantum ◽  
Total Electric Field

Interband transitions inGaN0.02As0.98−xSbx∕GaAs(0

2006 ◽  
Vol 73 (24) ◽  
Author(s):  
R. Kudrawiec ◽  
M. Gladysiewicz ◽  
J. Misiewicz ◽  
H. B. Yuen ◽  
S. R. Bank ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Interband Transitions ◽  
Single Quantum ◽  
Electroreflectance Spectroscopy
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