Optical Transitions in InGaPN/GaP Single Quantum Wells on GaP(100) Substrates by MOVPE

2007 ◽  
Vol 31 ◽  
pp. 224-226
Author(s):  
S. Sanorpim ◽  
D. Kaewket ◽  
Sukkaneste Tungasmita ◽  
R. Katayama ◽  
Kentaro Onabe
Keyword(s):  
Quantum Wells ◽  
Absorption Edge ◽  
Quantum Confinement Effect ◽  
Fundamental Absorption Edge ◽  
Blue Shift ◽  
Optoelectronic Device ◽  
Localized States ◽  
Bandgap Energy ◽  
Optical Transitions ◽  
Single Quantum

Optical transitions in the In0.050Ga0.950P0.975N0.025/GaP lattice-matched single quantum wells (SQWs) with different well widths (LZ = 1.6 - 6.4 nm) have been investigated by low-temperature photoluminescence (PL) and PL-excitation (PLE). PL spectra showed the strong visible emission from the samples which attracted to a variety of optoelectronic device applications such as light emitting and laser diodes. Comparing to the bulk film, the PL peak position and the fundamental absorption edge of PLE spectra exhibit blue-shift, which is corresponded to the quantum confinement effect by the well. Comparison between the absorption edge of PLE spectra and the finite square well calculation demonstrate that the effective bandgap energy of the InGaPN/GaP system is might be originated mainly from the N-related localized states.

Blue Shifting of Hydrogenated Silicon Carbide Multiple Quantum Wells

2011 ◽  
Vol 480-481 ◽  
pp. 629-633
Author(s):  
Wen Teng Chang ◽  
Yu Ting Chen ◽  
Chung Chin Kuo
Keyword(s):  
Silicon Carbide ◽  
Quantum Wells ◽  
Quantum Confinement Effect ◽  
Chemical Vapor ◽  
Blue Shift ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Plasma Chemical ◽  
Hydrogenated Silicon ◽  
Plasma Chemical Vapor Deposition

Five-period hydrogenated silicon carbide (SiC) multiple quantum wells with silicon dioxide (SiO2) or silicon nitride (SiN) dielectric that were synthesized by high density plasma chemical vapor deposition were studied using photoluminescence (PL) spectroscopy to understand its blue shift. Rapid thermal annealing induced significant blue shifting in the PL spectra after fluorine ion implantation due to crystallization. The thinning of the SiC causes blue shift due to the quantum confinement effect. The higher PL intensity of the amorphous SiC:H in SiO2 than in SiC/SiN may be attributed to the high number of non-radiative sites on its surface. Annealing with nitrogen may cause impurities in SiC/SiO2, thereby broadening the PL peak.

Optical transitions in thin CuIn(Te,Se)2 films near the fundamental absorption edge

1998 ◽  
Vol 34 (3-6) ◽  
pp. 237-240 ◽  
Author(s):  
A.S. Kindyak ◽  
V.V. Kindyak ◽  
Ya.J. Latushko
Keyword(s):  
Absorption Edge ◽  
Fundamental Absorption Edge ◽  
Optical Transitions

Optical, Structural and Spectroscopic Characterization of ZnS Nanocrystals Embedded in KBr Single Crystal Matrix Grown by Czochralski Method

2021 ◽  
Vol 406 ◽  
pp. 274-284
Author(s):  
Soria Zeroual ◽  
Mohammed Sadok Mahboub ◽  
Ghani Rihia ◽  
Mourad Mimouni ◽  
Ghougali Mebrouk ◽  
...  
Keyword(s):  
Single Crystal ◽  
Absorption Edge ◽  
Quantum Confinement Effect ◽  
Blue Shift ◽  
Czochralski Method ◽  
Spectroscopic Characterization ◽  
Czochralski Growth ◽  
X Ray Diffraction ◽  
Crystal Matrix ◽  
Zns Nanocrystals

ZnS nanocrystals were embedded in a KBr single crystal matrix using the Czochralski growth technique. The X-ray diffraction, FT-IR and optical spectroscopy revealed the incorporation of ZnS nanocrystals. A blue shift of the absorption edge of the obtained samples has been observed, indicating the quantum confinement effect. The optical band-gap is estimated to be about 4.67 eV. Two excitonic peaks appeared at 300.4 nm and 271 nm. The average nanocrystal size was derived from the optical spectra. Annealing led to a shift in the absorption edge towards longer wavelengths and an increasing of the emissions intensity. Raman lines of the nanoparticles are broader and frequency-shifted compared to those of the bulk crystals. These results show that KBr is a good matrix-host of ZnS nanocrystals, and that the elaborated samples can be used for important technological applications.

Optical Transitions near the Fundamental Absorption Edge and Electronic Structures of YAl3(BO3)4:Gd3+

2006 ◽  
Vol 45 (1A) ◽  
pp. 146-151 ◽  
Author(s):  
Hisashi Yoshida ◽  
Ryo Yoshimatsu ◽  
Shinta Watanabe ◽  
Kazuyoshi Ogasawara
Keyword(s):  
Absorption Edge ◽  
Electronic Structures ◽  
Fundamental Absorption Edge ◽  
Optical Transitions

Photoreflectance study of hydrogenated (InGa)(AsN)/GaAs heterostructures

2002 ◽  
Vol 744 ◽  
Author(s):  
M. Geddo ◽  
G. Guizzetti ◽  
R. Pezzuto ◽  
A. Polimeni ◽  
M. Capizzi ◽  
...  
Keyword(s):  
Binding Energy ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Heavy Hole ◽  
Energy Transition ◽  
Blue Shift ◽  
Spectral Features ◽  
Single Quantum ◽  
Electron Effective Mass ◽  
Gaas Substrates

ABSTRACTWe report on photoreflectance measurements performed in the 0.8–1.6 eV photon energy range in as grown and hydrogenated InxGa1-xAs1-yNy/GaAs single quantum wells grown on GaAs substrates by molecular beam epitaxy. In the hydrogenated samples, a blue-shift of all the QW spectral features and a surprising change with temperature in the nature of the lowest energy transition are found. These features are related to the interaction of H with N atoms. An increase in the binding energy of the heavy-hole exciton upon N introduction into the InxGa1-xAs lattice has been measured also and explained in terms of an increase in the electron effective mass.

Stretched exponential profiles of photoluminescence decays related to localized states in InGaAsN/GaAs single-quantum wells

2007 ◽  
Vol 122-123 ◽  
pp. 753-755 ◽  
Author(s):  
M. Nakayama ◽  
Y. Iguchi ◽  
K. Nomura ◽  
J. Hashimoto ◽  
T. Yamada ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Localized States ◽  
Single Quantum ◽  
Stretched Exponential
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