Water as reactive gas to prepare titanium oxynitride thin films by reactive sputtering

2003 ◽  
Vol 440 (1-2) ◽  
pp. 66-73 ◽  
Author(s):  
Jean-Marie Chappé ◽  
Nicolas Martin ◽  
Guy Terwagne ◽  
Jan Lintymer ◽  
Joseph Gavoille ◽  
...  
Shinku ◽  
1974 ◽  
Vol 17 (1) ◽  
pp. 19-22 ◽  
Author(s):  
Hiroharu HIRABAYASHI ◽  
Minoru NOGAMI

1990 ◽  
Vol 5 (4) ◽  
pp. 677-679 ◽  
Author(s):  
A. J. Drehman ◽  
M. W. Dumais

Y-Ba-Cu-O films were made by R-F diode sputtering using a single oxide target. It was found that if a small negative bias is applied to the substrate, the etching associated with reactive sputtering is significantly reduced. This results in better composition control and uniformity, which are quite important for the formation of superconducting thin films. Films deposited on strontium titanate, when annealed in oxygen, become superconducting with zero resistance at 89 K.


2012 ◽  
Vol 520 (16) ◽  
pp. 5137-5140 ◽  
Author(s):  
Ning Li ◽  
Yoshio Abe ◽  
Midori Kawamura ◽  
Kyung Ho Kim ◽  
Tsutomu Suzuki

1996 ◽  
Vol 153 (2) ◽  
pp. K1-K4
Author(s):  
E. V. Sviridov ◽  
D. Q. Xiao ◽  
W. B. Pezg ◽  
Z. Shi ◽  
J. G. Zhu

2009 ◽  
Vol 1210 ◽  
Author(s):  
Charlotte Platzer-Björkman ◽  
Trygve Mongstad ◽  
Smagul Zh. Karazhanov ◽  
Jan-Petter Maehlen ◽  
Erik Stensrud Marstein ◽  
...  

AbstractDeposition of MgHx (MgH2 + Mg) thin films is performed using RF reactive sputtering in argon-hydrogen plasma. Films are characterized using x-ray diffraction (XRD), scanning electron microscopy, optical and resistivity measurements. Formation of crystalline MgH2 is confirmed by XRD, but the formation of some metallic Mg in the films could not be avoided. Increased H/Mg ratio by deposition at high hydrogen flow or high total pressure gives films that oxidize within days or weeks. Deposition at elevated substrate temperature results in improved crystallinity and stability. Initial studies of MgHx for silicon surface passivation are presented.


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