scholarly journals Reactive Sputtering of Magnesium Hydride Thin Films for Photovoltaic Applications

2009 ◽  
Vol 1210 ◽  
Author(s):  
Charlotte Platzer-Björkman ◽  
Trygve Mongstad ◽  
Smagul Zh. Karazhanov ◽  
Jan-Petter Maehlen ◽  
Erik Stensrud Marstein ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Passivation ◽  
Hydrogen Plasma ◽  
Reactive Sputtering ◽  
X Ray Diffraction ◽  
High Hydrogen ◽  
Hydrogen Flow ◽  
Resistivity Measurements ◽  
Photovoltaic Applications ◽  
Silicon Surface Passivation

AbstractDeposition of MgHx (MgH2 + Mg) thin films is performed using RF reactive sputtering in argon-hydrogen plasma. Films are characterized using x-ray diffraction (XRD), scanning electron microscopy, optical and resistivity measurements. Formation of crystalline MgH2 is confirmed by XRD, but the formation of some metallic Mg in the films could not be avoided. Increased H/Mg ratio by deposition at high hydrogen flow or high total pressure gives films that oxidize within days or weeks. Deposition at elevated substrate temperature results in improved crystallinity and stability. Initial studies of MgHx for silicon surface passivation are presented.

Structural and optical properties of delafossite-type CuAlO2 thin films prepared by RF reactive sputtering

2005 ◽  
Vol 905 ◽  
Author(s):  
B. Yang ◽  
Y. M. Lu ◽  
C. Neumann ◽  
A. Polity ◽  
C. Z. Wang ◽  
...  
Keyword(s):  
Thin Films ◽  
Optical Properties ◽  
Band Gap ◽  
Reactive Sputtering ◽  
Wavelength Dependence ◽  
X Ray Diffraction ◽  
Structural And Optical Properties ◽  
Deposition Parameters ◽  
Delafossite Structure ◽  
Average Transmittance

AbstractDelafossite-type CuAlO2 thin films have been deposited by radio frequency (RF) reactive sputtering on sapphire using a CuAlO2 ceramic target. A study of structural and optical properties was performed on films of varying deposition parameters such as substrate temperature and oxygen partial pressure and also post annealing. The crystalline phase in the films was identified to be the delafossite structure by x-ray diffraction. The optical properties, such as the wavelength dependence of the transmittance and the band gap, were determined. The average transmittance is 80% in the wavelength range of 400-1500 nm and the band gap is 3.81 eV.

Improvement of crystalline silicon surface passivation by hydrogen plasma treatment

2004 ◽  
Vol 84 (9) ◽  
pp. 1474-1476 ◽  
Author(s):  
I. Martı́n ◽  
M. Vetter ◽  
A. Orpella ◽  
C. Voz ◽  
J. Puigdollers ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Silicon Surface ◽  
Surface Passivation ◽  
Crystalline Silicon ◽  
Hydrogen Plasma ◽  
Silicon Surface Passivation

Surface Passivation of Crystalline Silicon by a-Si:H Thin Films

2014 ◽  
Vol 936 ◽  
pp. 603-606
Author(s):  
Yin Wang ◽  
Wei Li ◽  
An Ran Guo ◽  
Feng Yu ◽  
Jian He ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetron Sputtering ◽  
Carrier Lifetime ◽  
Surface Passivation ◽  
Minority Carrier ◽  
Crystalline Silicon ◽  
Minority Carrier Lifetime ◽  
Rf Magnetron Sputtering ◽  
Hydrogen Flow Rate ◽  
Hydrogen Flow

Surface passivation of c-Si by a-Si:H thin films has been studied. In this paper, the minority carrier lifetime of 345μs (from 85μs) is obtained at optimal hydrogen flow rate (8.0sccm) by using RF-magnetron sputtering method.

Influence of nitrogen implantation on the properties of Ti and substoichiometric TiNx films deposited on high speed steel

1998 ◽  
Vol 13 (8) ◽  
pp. 2117-2122 ◽  
Author(s):  
M. T. Rodrigo ◽  
C. Jiménez ◽  
L. Váquez ◽  
F. Alonso ◽  
M. Fernández ◽  
...  
Keyword(s):  
Thin Films ◽  
Nitrogen Content ◽  
High Speed ◽  
High Speed Steel ◽  
Reactive Sputtering ◽  
X Ray Diffraction ◽  
Nitrogen Implantation ◽  
X Ray

Ti and TiNx (x < 1) thin films have been deposited on high speed steel (HSS) substrates by reactive sputtering and then N+ implanted. The increase of the N/Ti ratio of the films during deposition is related to a decrease in their roughness, and N+ implantation produces another additional slight decrease of the roughness. The hardness of samples increases with the nitrogen content in the as-deposited samples; nevertheless, N+-implanted Ti coatings show lower values of hardness than reactive sputtered TiNx films. α–Ti, ε–Ti2N, and δ–TiN phases were identified by grazing x-ray diffraction.

Ag–B Thin Films Prepared by Magnetron Sputtering

2004 ◽  
Vol 848 ◽  
Author(s):  
Oren Metz ◽  
Joshua Pelleg ◽  
Misha Sinder ◽  
Roni Shneck ◽  
Vladimir Sokolovsky
Keyword(s):  
Thin Films ◽  
Optical Microscope ◽  
Short Report ◽  
Great Activity ◽  
X Ray Diffraction ◽  
Auger Analysis ◽  
X Ray ◽  
Preliminary Results ◽  
Resistivity Measurements ◽  
Unstable Phase

ABSTRACTThe discovery of the new superconductor MgB2 with critical temperature of Tc = 39 K stimulated great activity in search for materials with higher Tc. Theoretical works predicted the possibility of obtaining such superconducting materials in other borides also, in particular in AgB2. It was predicted in these works that diborides of metals having the AlB2 type structure, among them AgB2 may have superconductivity with a Tc higher than 39 K. In an early very short report the lattice parameters of AgB2 were evaluated in a synthesized specimen. However, no other indication exists that AgB2 was ever produced. We report the preliminary results of our attempts to prepare AgB2 films.Thin films of Ag-B were produced by magnetron cosputtering in Ar ambient from two separate targets that of B and Ag on Si (100) substrates. The specimens were subjected to X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photo spectroscopy (XPS), Auger analysis and optical microscope (OM) investigations. Resistivity measurements in a wide temperature range were measured. No superconductivity was yet observed in the range ∼10 – 200. K on the basis of resistivity measurements. Preliminary results indicate that AgB2 might be an unstable phase.

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