Electrical and photoelectrical characterization of GaAsxSy polycrystalline thin films

1997 ◽  
Vol 296 (1-2) ◽  
pp. 114-117 ◽  
Author(s):  
O. Pesty ◽  
P. Canet ◽  
F. Lalande ◽  
H. Carchano ◽  
D. Lollman
Keyword(s):  
Thin Films ◽  
Polycrystalline Thin Films

X-ray Diffraction Studies of Polycrystalline Thin Films Using Glancing Angle Diffractometry

1988 ◽  
Vol 32 ◽  
pp. 311-321 ◽  
Author(s):  
R.A. Larsen ◽  
T.F. McNulty ◽  
R.P. Goehner ◽  
K.R. Crystal
Keyword(s):  
Thin Films ◽  
Deep Penetration ◽  
X Ray Diffraction ◽  
Parallel Beam ◽  
X Ray ◽  
Beam Geometry ◽  
Polycrystalline Thin Films ◽  
Glancing Angle ◽  
Parallel Beam Geometry

AbstractThe use of conventional θ/2θ diffraction methods for the characterization of polycrystalline thin films is not in general a satisfactory technique due to the relatively deep penetration of x-ray photons in most materials. Glancing incidence diffraction (GID) can compensate for the penetration problems inherent in the θ/2θ geometry. Parallel beam geometry has been developed in conjunction with GID to eliminate the focusing aberrations encountered when performing these types of measurements. During the past yearwe developed a parallel beam attachment which we have successfully configured to a number of systems.

Characterization of Copper Diffusion into Al and Al-1% Si Polycrystalline Thin Films

1995 ◽  
Vol 403 ◽  
Author(s):  
L. H. Walsh ◽  
G. O. Ramseyer ◽  
J. V. Beasock ◽  
H. F. Helbig ◽  
K. P. MacWilliams
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Surface Morphology ◽  
Copper Diffusion ◽  
Cu Films ◽  
Polycrystalline Thin Films ◽  
Sample Depth ◽  
Versus Sample ◽  
Sputter Deposited

AbstractAl and AI-1%Si 900 nanometer thin films were deposited on 100 nanometer Cu films on thermally oxidized (100 nanometer) Si wafers. The Al and Cu films were deposited using evaporation techniques, and the Al-1%Si film was sputter deposited. Different thin film samples were heated in vacuum to 175, 250, 330 and 400°C for 1 hour. The various annealed and original samples were compared using surface morphology, as well as composition versus sample depth. Differences between the Al and Al-1%Si samples are discussed.

Electrodeposition and characterization of GaAs polycrystalline thin films

1994 ◽  
Vol 75 (1) ◽  
pp. 549-552 ◽  
Author(s):  
Yuankai Gao ◽  
Aizhen Han ◽  
Yiqing Lin ◽  
Yongchun Zhao ◽  
Jingdong Zhang
Keyword(s):  
Thin Films ◽  
Polycrystalline Thin Films

Ex situ characterization of phase transformations and associated microstructures in polycrystalline thin films

1999 ◽  
Vol 17 (4) ◽  
pp. 1950-1957 ◽  
Author(s):  
K. Barmak ◽  
J. M. Rickman ◽  
C. Michaelsen ◽  
R. A. Ristau ◽  
J. Kim ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Transformations ◽  
Ex Situ ◽  
Polycrystalline Thin Films

Growth and characterization of L1/sub 0/ FePt and CoPt [001] textured polycrystalline thin films

2001 ◽  
Vol 37 (4) ◽  
pp. 1309-1311 ◽  
Author(s):  
Sangki Jeong ◽  
M.E. McHenry ◽  
D.E. Laughlin
Keyword(s):  
Thin Films ◽  
Polycrystalline Thin Films

The Development and Characterization of Crystallographic Texture in thin films for Magnetic Recording

1997 ◽  
Vol 475 ◽  
Author(s):  
David E. Laughlin ◽  
Li Tang ◽  
Li-Lien Lee ◽  
Yu-Nu Hsu ◽  
David Lambeth
Keyword(s):  
Thin Films ◽  
Magnetic Recording ◽  
Crystallographic Texture ◽  
Magnetic Layer ◽  
Growth Direction ◽  
Selected Area Electron Diffraction ◽  
Polycrystalline Thin Films ◽  
Longitudinal Recording ◽  
Diffraction Patterns

ABSTRACTThe development of crystallographic texture in thin film longitudinal recording media is discussed. Polycrystalline thin films may obtain their crystallographic texture by means of a nucleation process such as epitaxial nucleation on a polycrystalline underlayer or by means of a process involving a preferred growth direction. In this paper we will discuss various epitaxial nucleation textures that are obtained in media produced for magnetic recording. We will discuss the way that the underlayer controls the crystallographic texture of the magnetic layer, as well as methods used to control the texture of the underlayer itself. We give a brief overview of some of our recent findings in the growth of NiAl and FeAl films used for underlayers. Finally we will briefly discuss what we have called the tilted electron beam technique. In this technique selected area electron diffraction patterns are obtained at different angles of tilt and the development of arcs in the patterns is analyzed so as to determine the type and amount of crystallographic texture which is present in the films.

Sign in / Sign up

Export Citation Format

Share Document