Characterization of Copper Diffusion into Al and Al-1% Si Polycrystalline Thin Films

1995 ◽  
Vol 403 ◽  
Author(s):  
L. H. Walsh ◽  
G. O. Ramseyer ◽  
J. V. Beasock ◽  
H. F. Helbig ◽  
K. P. MacWilliams

AbstractAl and AI-1%Si 900 nanometer thin films were deposited on 100 nanometer Cu films on thermally oxidized (100 nanometer) Si wafers. The Al and Cu films were deposited using evaporation techniques, and the Al-1%Si film was sputter deposited. Different thin film samples were heated in vacuum to 175, 250, 330 and 400°C for 1 hour. The various annealed and original samples were compared using surface morphology, as well as composition versus sample depth. Differences between the Al and Al-1%Si samples are discussed.

1999 ◽  
Vol 5 (S2) ◽  
pp. 256-257
Author(s):  
R. Loloee ◽  
W.P. Pratt ◽  
M. A. Crimp

Crystallographic structure plays an important role in determining the fundamental physical properties of metallic thin films and superlattices, and structural characterization of such films is crucial for furthering the application of these materials [1]. Epitaxial films are usually characterized using a wide range of techniques including x-ray diffraction, REED, neutron diffraction, and highresolution electron microscopy. A complementary approach is electron backscatter patterns (EBSP), which is an SEM technique that can be used to measure crystallographic orientations of single or polycrystals [2].In this work, EBSPs have been used to characterize the crystallite size and orientation of sputterdeposited Cu films. The EBSPs were formed in a CamScan 44FE SEM and recorded using an ORTEX CCD camera system. The images were analyzed using the Channel+ software package, and orientation maps were plotted using Channel+Ice [3].


1999 ◽  
Vol 562 ◽  
Author(s):  
Adriana E. Lita ◽  
John E. Sanchez

ABSTRACTThe evolution of crystallographic texture, grain size and surface morphology in magnetron sputter deposited Al-0.5wt.% Cu polycrystalline thin films is reported as a function of film thickness for SiO2 and SiO2/Ti underlayers for several deposition rates. Regardless of the underlayer type, the initial ≈ 10 nm of the Al-Cu films is nearly randomly oriented, with the films developing a (111) out-of-plane texture which increases in strength with thickness during deposition. The AlCu films on sputtered Ti underlayers developed an exact (111) fiber orientation while Al-Cu films on oxide substrates were offset ≈ 5° from exact fiber orientation. Higher deposition rates were found to result in slightly better (111) textured 20 nm AlCu films. The surface morphology of films, determined by Atomic Force Microscopy (AFM), revealed two regimes of average roughness (Rrms) evolution during deposition. Rrms decreased early in the deposition process, followed by a roughening regime where Rrms increased with thickness. These results are discussed in terms of mechanisms such as grain growth, which help to determine microstructure development during film formation from the vapor.


1997 ◽  
Vol 296 (1-2) ◽  
pp. 114-117 ◽  
Author(s):  
O. Pesty ◽  
P. Canet ◽  
F. Lalande ◽  
H. Carchano ◽  
D. Lollman

Author(s):  
E.M.K. Ikball Ahamed ◽  
N.K. Das ◽  
S.F.U. Farhad ◽  
M.N.I. Khan ◽  
M.A. Matin ◽  
...  

2002 ◽  
Vol 92 (1) ◽  
pp. 310-319 ◽  
Author(s):  
David L. Young ◽  
Helio Moutinho ◽  
Yanfa Yan ◽  
Timothy J. Coutts

2015 ◽  
Vol 159 ◽  
pp. 118-121 ◽  
Author(s):  
Ernandes T. Tenório-Neto ◽  
Marcos R. Guilherme ◽  
Manuel E.G. Winkler ◽  
Lucio Cardozo-Filho ◽  
Stéphani C. Beneti ◽  
...  

2011 ◽  
Vol 13 ◽  
pp. 87-92 ◽  
Author(s):  
M.S.P Sarah ◽  
F.S. Zahid ◽  
M.Z. Musa ◽  
U.M. Noor ◽  
Z. Shaameri ◽  
...  

The photoconductivity of a nanocomposite MEH-PPV:TiO2 thin film is investigated. The nanocomposite MEH-PPV:TiO2 thin film was deposited on a glass substrate by spin coating technique. The composition of the TiO2 powder was varied from 5 wt% to 20 wt% (with 5 wt% interval). The concentration of the MEH-PPV is given by 1 mg/1 ml. The current voltage characteristics were measured in dark and under illumination. The photoconductivity showed increment in value as the composition of the TiO2 is raised in the polymer based solution. The absorption showed augmentation as the amount of TiO2 is increased. The escalation of the current voltage is then supported by the results of surface morphology.


2011 ◽  
Vol 239-242 ◽  
pp. 891-894 ◽  
Author(s):  
Tsung Fu Chien ◽  
Jen Hwan Tsai ◽  
Kai Huang Chen ◽  
Chien Min Cheng ◽  
Chia Lin Wu

In this study, thin films of CaBi4Ti4O15with preferential crystal orientation were prepared by the chemical solution deposition (CSD) technique on a SiO2/Si substrate. The films consisted of a crystalline phase of bismuth-layer-structured dielectric. The as-deposited CaBi4Ti4O15thin films were crystallized in a conventional furnace annealing (RTA) under the temperature of 700 to 800°C for 1min. Structural and morphological characterization of the CBT thin films were investigated by X-ray diffraction (XRD) and field-emission scanning electron microscope (FE-SEM). The impedance analyzer HP4294A and HP4156C semiconductor parameters analyzer were used to measurement capacitance voltage (C-V) characteristics and leakage current density of electric field (J-E) characteristics by metal-ferroelectric-insulator- semiconductor (MFIS) structure. By the experimental result the CBT thin film in electrical field 20V, annealing temperature in 750°C the CBT thin film leaks the electric current is 1.88x10-7A/cm2and the memory window is 1.2V. In addition, we found the strongest (119) peak of as-deposited thin films as the annealed temperature of 750°C


1992 ◽  
Vol 104-107 ◽  
pp. 1847-1850 ◽  
Author(s):  
Michael A. Russak ◽  
Christopher V. Jahnes ◽  
Erik Klokholm ◽  
Bojan Petek

2019 ◽  
Vol 26 (5) ◽  
pp. 1600-1611 ◽  
Author(s):  
Gihan Kwon ◽  
Yeong-Ho Cho ◽  
Ki-Bum Kim ◽  
Jonathan D. Emery ◽  
In Soo Kim ◽  
...  

Porous, high-surface-area electrode architectures are described that allow structural characterization of interfacial amorphous thin films with high spatial resolution under device-relevant functional electrochemical conditions using high-energy X-ray (>50 keV) scattering and pair distribution function (PDF) analysis. Porous electrodes were fabricated from glass-capillary array membranes coated with conformal transparent conductive oxide layers, consisting of either a 40 nm–50 nm crystalline indium tin oxide or a 100 nm–150 nm-thick amorphous indium zinc oxide deposited by atomic layer deposition. These porous electrodes solve the problem of insufficient interaction volumes for catalyst thin films in two-dimensional working electrode designs and provide sufficiently low scattering backgrounds to enable high-resolution signal collection from interfacial thin-film catalysts. For example, PDF measurements were readily obtained with 0.2 Å spatial resolution for amorphous cobalt oxide films with thicknesses down to 60 nm when deposited on a porous electrode with 40 µm-diameter pores. This level of resolution resolves the cobaltate domain size and structure, the presence of defect sites assigned to the domain edges, and the changes in fine structure upon redox state change that are relevant to quantitative structure–function modeling. The results suggest the opportunity to leverage the porous, electrode architectures for PDF analysis of nanometre-scale surface-supported molecular catalysts. In addition, a compact 3D-printed electrochemical cell in a three-electrode configuration is described which is designed to allow for simultaneous X-ray transmission and electrolyte flow through the porous working electrode.


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