The Development and Characterization of Crystallographic Texture in thin films for Magnetic Recording

1997 ◽  
Vol 475 ◽  
Author(s):  
David E. Laughlin ◽  
Li Tang ◽  
Li-Lien Lee ◽  
Yu-Nu Hsu ◽  
David Lambeth
Keyword(s):  
Thin Films ◽  
Magnetic Recording ◽  
Crystallographic Texture ◽  
Magnetic Layer ◽  
Growth Direction ◽  
Selected Area Electron Diffraction ◽  
Polycrystalline Thin Films ◽  
Longitudinal Recording ◽  
Diffraction Patterns

ABSTRACTThe development of crystallographic texture in thin film longitudinal recording media is discussed. Polycrystalline thin films may obtain their crystallographic texture by means of a nucleation process such as epitaxial nucleation on a polycrystalline underlayer or by means of a process involving a preferred growth direction. In this paper we will discuss various epitaxial nucleation textures that are obtained in media produced for magnetic recording. We will discuss the way that the underlayer controls the crystallographic texture of the magnetic layer, as well as methods used to control the texture of the underlayer itself. We give a brief overview of some of our recent findings in the growth of NiAl and FeAl films used for underlayers. Finally we will briefly discuss what we have called the tilted electron beam technique. In this technique selected area electron diffraction patterns are obtained at different angles of tilt and the development of arcs in the patterns is analyzed so as to determine the type and amount of crystallographic texture which is present in the films.

Electron diffraction studies of amorphous and polycrystalline thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 118-119
Author(s):  
D J H Cockayne ◽  
D R McKenzie
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Polycrystalline Materials ◽  
Good Resolution ◽  
Scattered Intensity ◽  
Radial Density ◽  
X Ray ◽  
Polycrystalline Thin Films ◽  
Nitrogen Ion ◽  
Diffraction Patterns

The study of amorphous and polycrystalline materials by obtaining radial density functions G(r) from X-ray or neutron diffraction patterns is a well-developed technique. We have developed a method for carrying out the same technique using electron diffraction in a standard TEM. It has the advantage that studies can be made of thin films, and on regions of specimen too small for X-ray and neutron studies. As well, it can be used to obtain nearest neighbour distances and coordination numbers from the same region of specimen from which HREM, EDS and EELS data is obtained.The reduction of the scattered intensity I(s) (s = 2sinθ/λ ) to the radial density function, G(r), assumes single and elastic scattering. For good resolution in r, data must be collected to high s. Previous work in this field includes pioneering experiments by Grigson and by Graczyk and Moss. In our work, the electron diffraction pattern from an amorphous or polycrystalline thin film is scanned across the entrance aperture to a PEELS fitted to a conventional TEM, using a ramp applied to the post specimen scan coils. The elastically scattered intensity I(s) is obtained by selecting the elastically scattered electrons with the PEELS, and collecting directly into the MCA. Figure 1 shows examples of I(s) collected from two thin ZrN films, one polycrystalline and one amorphous, prepared by evaporation while under nitrogen ion bombardment.

Electrical and photoelectrical characterization of GaAsxSy polycrystalline thin films

1997 ◽  
Vol 296 (1-2) ◽  
pp. 114-117 ◽  
Author(s):  
O. Pesty ◽  
P. Canet ◽  
F. Lalande ◽  
H. Carchano ◽  
D. Lollman
Keyword(s):  
Thin Films ◽  
Polycrystalline Thin Films

Computer Analysis of Electron Diffraction From thin Films

1998 ◽  
Vol 4 (S2) ◽  
pp. 344-345
Author(s):  
Warren MoberlyChan ◽  
R. Kilaas ◽  
L-H. Chan ◽  
T. Nolan ◽  
P. Dorsey ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Computer Processing ◽  
Information Storage ◽  
Engineering Properties ◽  
Digital Recording ◽  
Longitudinal Recording ◽  
Diffraction Patterns ◽  
User Friendly ◽  
Co Alloys

As engineering properties are miniaturized by mo thinner films, crystallographic analyses become more appropriate by electron diffraction than XRD. Without synchrotron sources, XRD scans of such films often expose one peak at best. However, these thinner films become more suited for TEM, with less artifacts from sample preparation. XRD scans with peaks in the noise are quantitatively accepted, while vast differences in electron diffraction patterns remain unquantified. Digital recording of TEM information removes the uncertain hand waving of the darkroom; and fast, user-friendly computer processing especially removes the nonstatistical art in image analysis. This work inputs 16-bit (>65,000 gray levels) images of ring diffraction patterns into Digital Micrograph and utilizes a Rotation Average subroutine (1) to plot peak intensities.Information storage in a hard drive utilizes sputtered thin films of HCP-Co-alloys with magnetic bits tied to the crystallographic orientation of each grain. Longitudinal-recording density and signal-to-noise can be enhanced for thin films with c-axes of all grains in plane.

X-ray Diffraction Studies of Polycrystalline Thin Films Using Glancing Angle Diffractometry

1988 ◽  
Vol 32 ◽  
pp. 311-321 ◽  
Author(s):  
R.A. Larsen ◽  
T.F. McNulty ◽  
R.P. Goehner ◽  
K.R. Crystal
Keyword(s):  
Thin Films ◽  
Deep Penetration ◽  
X Ray Diffraction ◽  
Parallel Beam ◽  
X Ray ◽  
Beam Geometry ◽  
Polycrystalline Thin Films ◽  
Glancing Angle ◽  
Parallel Beam Geometry

AbstractThe use of conventional θ/2θ diffraction methods for the characterization of polycrystalline thin films is not in general a satisfactory technique due to the relatively deep penetration of x-ray photons in most materials. Glancing incidence diffraction (GID) can compensate for the penetration problems inherent in the θ/2θ geometry. Parallel beam geometry has been developed in conjunction with GID to eliminate the focusing aberrations encountered when performing these types of measurements. During the past yearwe developed a parallel beam attachment which we have successfully configured to a number of systems.

Co3Pt Nanocomposite Films for Perpendicular Magnetic Recording Media

2010 ◽  
Vol 123-125 ◽  
pp. 27-30 ◽  
Author(s):  
Chih Long Shen ◽  
Po Cheng Kuo ◽  
S.C. Chen ◽  
C.D. Chen ◽  
S.L. Hsu ◽  
...  
Keyword(s):  
Thin Films ◽  
Magnetic Properties ◽  
Process Parameters ◽  
Magnetic Recording ◽  
Magnetic Layer ◽  
Nanocomposite Films ◽  
Recording Media ◽  
Magnetic Recording Media ◽  
Perpendicular Magnetic Recording ◽  
Significant Potential

The Co3Pt magnetic layer with thickness of 7~28 nm was deposited onto the Pt underlayer. The as-deposited Co3Pt/Pt double-layered films with or without a 5 nm Pt capped layer were annealed at temperatures between 275 and 375 °C in vacuum of 1 mTorr. The influences of process parameters on perpendicular magnetic properties of Co3Pt thin films were investigated. The Co3Pt film with perpendicular coercivity (Hc⊥) value of 3620 Oe and the perpendicular squareness (S⊥) of 0.7 could be achieved from the Co3Pt(18 nm)/Pt(100 nm) double-layered films by annealing at 300°C. Further added Tb30Co70 film on the Co3Pt/Pt double-layered film could greatly enhance the perpendicular magnetic properties of the film. The Hc⊥ and S⊥ of the Tb30Co70/Co3Pt/Pt film were as high as 6560 Oe and 0.88, respectively, which has significant potential to be applied in perpendicular magnetic recording media.

Electron Diffraction Investigation of Crystallographic Texture of Thin Films

1999 ◽  
Vol 562 ◽  
Author(s):  
Li Tang ◽  
Shanlin Duan ◽  
David E. Laughlin
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Crystallographic Texture ◽  
Film Plane ◽  
Electron Diffraction Investigation ◽  
Texture Axis ◽  
Circular Arcs ◽  
Ewald Sphere ◽  
Diffraction Patterns ◽  
Multilayered Thin Films

ABSTRACTA method of investigating thin film crystallographic texture by electron diffraction is reviewed. The reciprocal lattices of fibrous and lamellar textured thin films are spherical belts around the texture axis. Equations describing the projection of the spherical belts onto the Ewald sphere along the texture axis direction are presented. Based on these equations the geometric and intensity evolution of the electron diffraction patterns with the tilt angle about an arbitrary axis in the film plane can be analyzed in a systematic way. The geometric characteristics of the electron diffraction patterns are then used to derive the texture axis directional index and its angular distribution. The way to determine the equal-intensity circular arcs on the diffraction pattern is also discussed. This method can be applied to both single layered and multilayered thin films of various applications.

Preparation and Characterization of Transparent Conducting Mn and Ni-Doped Zinc Oxide Films Prepared by Successive Ionic Layer Adsorption and Reaction Method

2020 ◽  
Vol 15 (1) ◽  
pp. 101-107
Author(s):  
M. Karunakaran ◽  
L. Bruno Chandrasekar ◽  
K. Kasirajan ◽  
R. Chandramohan
Keyword(s):  
Thin Films ◽  
Transparent Conducting Oxide ◽  
Hexagonal Structure ◽  
Silar Method ◽  
Texture Coefficients ◽  
Transparent Conducting ◽  
Doped Zno ◽  
Diffraction Patterns ◽  
Metal Doped

This paper reported the preparation and characterization of transparent conducting oxide thin films. Undoped and doped ZnO thin films were prepared by SILAR method. The micro-structural and optical properties were investigated. X-ray diffraction patterns revealed that the prepared thin films are polycrystalline in nature and has a hexagonal structure. The micro-structural properties of prepared thin films were calculated and crystallite size tends to changes due to dopant. The texture coefficients have been evaluated and found to be greater than unity revealing high texturing of the film. Undoped and Mn-doped ZnO prefer the orientation of (002) but Ni-doped ZnO and Mn and Ni co-doped ZnO prefers (100) orientation. The transmittance spectra of pure and transition metal-doped films were plotted against UV-Vis-NIR region and found that the transmittance changes with dopant and nature of doping. The optical band gap values were found to be in the range of 3.00–3.39 eV. The optical constants such as extinction coefficient, refractive index, dielectric constant and optical conductivity were examined.

Electron Diffraction Effects in Multi-Layered (Overlapping) Palladium Single-Crystal Films

1971 ◽  
Vol 29 ◽  
pp. 190-191
Author(s):  
G. I. Wong ◽  
H. P. Singh ◽  
L. E. Murr
Keyword(s):  
Thin Films ◽  
Electron Diffraction ◽  
Multiple Diffraction ◽  
Polycrystalline Thin Films ◽  
Crystalline Substrate ◽  
Single Crystal Films ◽  
Crystal Films ◽  
Diffraction Patterns ◽  
Diffraction Effects ◽  
Vapor Deposit

Simple multiple diffraction effects dealing with scattered or re-entrant beams in single foils containing twins or crystalline phases giving rise to double diffraction are generally well known. In addition, multiple diffraction arising in two overlapping thin films such as a multiple vapor deposit or an oxide on a crystalline substrate or base film has been studied. There are very few, if any, studies which attempt to systematically describe the diffraction patterns arising from overlapped, rotated, and imperfect single and polycrystalline thin films. This study demonstrates the complicated electron diffraction patterns which can arise by multiple diffraction in laye redarrays of thin Pd films, and describes the origins of some of the observed reflections.

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