X-ray Diffraction Studies of Polycrystalline Thin Films Using Glancing Angle Diffractometry

1988 ◽  
Vol 32 ◽  
pp. 311-321 ◽  
Author(s):  
R.A. Larsen ◽  
T.F. McNulty ◽  
R.P. Goehner ◽  
K.R. Crystal
Keyword(s):  
Thin Films ◽  
Deep Penetration ◽  
X Ray Diffraction ◽  
Parallel Beam ◽  
X Ray ◽  
Beam Geometry ◽  
Polycrystalline Thin Films ◽  
Glancing Angle ◽  
Parallel Beam Geometry

AbstractThe use of conventional θ/2θ diffraction methods for the characterization of polycrystalline thin films is not in general a satisfactory technique due to the relatively deep penetration of x-ray photons in most materials. Glancing incidence diffraction (GID) can compensate for the penetration problems inherent in the θ/2θ geometry. Parallel beam geometry has been developed in conjunction with GID to eliminate the focusing aberrations encountered when performing these types of measurements. During the past yearwe developed a parallel beam attachment which we have successfully configured to a number of systems.

Synthesis and Characterization of MoS2 Thin Films Grown by Pulsed Laser Evaporation

1988 ◽  
Vol 140 ◽  
Author(s):  
M. S. Donley ◽  
P. T. Murray ◽  
N. T. McDevitt
Keyword(s):  
Thin Films ◽  
Pulsed Laser ◽  
Plasma Temperature ◽  
Laser Evaporation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Plot Analysis ◽  
Glancing Angle ◽  
Substrate Temperatures

AbstractThe growth and characterization of MoS thin films grown by pulsed laser evaporation is investigated. TOF anafysis of the ions evaporated from an MoS2 target indicates that PLE results primarily in the evaporation of atomic Mo and S species; MoxSy clusters were also detected, but were present at a significantly Iower intensity. TOF velocity analysis indicates an effective plasma temperature of 1500K. Stoichiometric MoS2 films were grown at substrate temperatures between room temperature and 500ºC under the above laser conditions. XPS data is used to develop a Wagner chemical state plot. Analysis of the films by Raman spectroscopy and glancing angle x-ray diffraction indicates the films to be crystalline, hexagonal MoS2, with a tendency for basal plane orientation parallel to the substrate.

scholarly journals Effects of Misalignment of Parallel Beam Optics on Thin Film Stress Analysis

2014 ◽  
Vol 996 ◽  
pp. 141-146
Author(s):  
Nicholas Norberg ◽  
Arnold C. Vermeulen
Keyword(s):  
Significant Error ◽  
Film Stress ◽  
Alignment Error ◽  
Beam Optics ◽  
X Ray Diffraction ◽  
Parallel Beam ◽  
X Ray ◽  
Thin Film Stress ◽  
Beam Geometry ◽  
Parallel Beam Geometry

Collecting reliable data is crucial in the research of residual stresses in thin films using X-ray diffraction. The parallel beam geometry has advantage of reliability compared to focusing beam geometry. Though care must be taken to the alignment. A small alignment error may cause a significant error in the stress value. We will show the sensitivity for the misalignment of the parallel beam optics, discuss requirements on hardware alignment and demonstrate a software correction for the presence of remaining hardware errors.

scholarly journals Characterization of epitaxial ZrO2by X-ray diffractometry with parallel-beam geometry

1996 ◽  
Vol 52 (a1) ◽  
pp. C361-C361
Author(s):  
P. Guinebretière ◽  
A. Dauger ◽  
O. Masson ◽  
B. Soulestin
Keyword(s):  
Parallel Beam ◽  
X Ray ◽  
Beam Geometry ◽  
Parallel Beam Geometry

Use of polycapillary X-ray lenses in the X-ray diffraction measurement of texture

2002 ◽  
Vol 35 (2) ◽  
pp. 196-206 ◽  
Author(s):  
U. Welzel ◽  
M. Leoni
Keyword(s):  
Sample Surface ◽  
Diffraction Measurement ◽  
Finite Sample ◽  
X Ray Diffraction ◽  
Parallel Beam ◽  
X Ray ◽  
Beam Geometry ◽  
Pole Figures ◽  
Finite Sample Size ◽  
Parallel Beam Geometry

Corrections for instrumental aberrations of X-ray diffraction texture measurements (pole-figure measurements) conducted in quasi-parallel-beam geometry using an X-ray lens have been investigated on the basis of measurements on (texture-free) reference samples. It has been shown that a defocusing correction, which is a major correction in the case of pole figures recorded with divergent-beam geometries, is not necessary when a parallel beam, produced by an X-ray lens, is used. In this case, the major instrumental sources of error stem from the illumination of areas outside the sample surface,i.e.the finite sample size, and the finite area of the detector, both giving rise to a reduction of the recorded signal. Two correction procedures for this reduction, an experimental one and a numerical one, have been tested and are described.

Structural and Optical Characterization of Zinc Telluride Thin Films

2013 ◽  
Vol 665 ◽  
pp. 254-262 ◽  
Author(s):  
J.R. Rathod ◽  
Haresh S. Patel ◽  
K.D. Patel ◽  
V.M. Pathak
Keyword(s):  
Thin Films ◽  
Extinction Coefficient ◽  
Nir Spectroscopy ◽  
Optical Characterization ◽  
X Ray Diffraction ◽  
X Ray ◽  
Evaporation Technique ◽  
Film Form ◽  
Znte Thin Films

Group II-VI compounds have been investigated largely in last two decades due to their interesting optoelectronic properties. ZnTe, a member of this family, possesses a bandgap around 2.26eV. This material is now a day investigated in thin film form due to its potential towards various viable applications. In this paper, the authors report their investigations on the preparation of ZnTe thin films using vacuum evaporation technique and their structural and optical characterizations. The structural characterization, carried out using an X-ray diffraction (XRD) technique shows that ZnTe used in present case possesses a cubic structure. Using the same data, the micro strain and dislocation density were evaluated and found to be around 1.465×10-3lines-m2and 1.639×1015lines/m2respecctively. The optical characterization carried out in UV-VIS-NIR region reveals the fact that band gap of ZnTe is around 2.2eV in present case. In addition to this, it was observed that the value of bandgap decreases as the thickness of films increases. The direct transitions of the carries are involved in ZnTe. Using the data of UV-VIS-NIR spectroscopy, the transmission coefficient and extinction coefficient were also calculated for ZnTe thin films. Besides, the variation of extinction coefficient with wavelength has also been discussed here.

scholarly journals Characterization of superconducting oxide thin films by X-ray diffraction.

1990 ◽  
Vol 37 (1) ◽  
pp. 141-144
Author(s):  
Tsunekazu Iwata ◽  
Akihiko Yamaji ◽  
Youichi Enomoto
Keyword(s):  
Thin Films ◽  
X Ray Diffraction ◽  
Oxide Thin Films ◽  
X Ray
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