OS1311 Quantitative characterization of crystallinity of grain boundaries in nano-scale and its application to the strength evaluation of polycrystalline thin films

AbstractA new approach for measurement of local thickness and characterization of grain boundaries is presented. The method is embodied in a software tool that helps to find and set sample orientations useful for high-resolution transmission electron microscopic (HRTEM) examination of grain boundaries in polycrystalline thin films. The novelty is thesimultaneoustreatment of the two neighboring grains and orienting both grains and the boundary planesimultaneously. The same metric matrix-based formalism is used for all crystal systems. Input into the software tool includes orientation data for the grains in question, which is determined automatically for a large number of grains by the commercial ASTAR program. Grain boundaries suitable for HRTEM examination are automatically identified by our software tool. Individual boundaries are selected manually for detailed HRTEM examination from the automatically identified set. Goniometer settings needed to observe the selected boundary in HRTEM are advised by the software. Operation is demonstrated on examples from cubic and hexagonal crystal systems.

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Enhanced Quantitative Characterization Of Textured Al-doped ZnO Thin Films Using Plan-view Electron Diffraction

Microscopy and Microanalysis ◽

10.1017/s1431927612008094 ◽

2012 ◽

Vol 18 (S2) ◽

pp. 1248-1249

Author(s):

J. Wang

Keyword(s):

Thin Films ◽

Electron Diffraction ◽

Zno Thin Films ◽

Quantitative Characterization ◽

Plan View ◽

Doped Zno

Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.

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Characterization of Grain Boundaries in Bicrystalline Thin Films

Treatise on Materials Science & Technology - Preparation and Properties of Thin Films ◽

10.1016/b978-0-12-341824-1.50009-4 ◽

1982 ◽

pp. 113-161

Author(s):

F. COSANDEY ◽

C.L. BAUER

Keyword(s):

Thin Films ◽

Grain Boundaries

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X-ray Diffraction Studies of Polycrystalline Thin Films Using Glancing Angle Diffractometry

Advances in X-ray Analysis ◽

10.1154/s0376030800020620 ◽

1988 ◽

Vol 32 ◽

pp. 311-321 ◽

Cited By ~ 2

Author(s):

R.A. Larsen ◽

T.F. McNulty ◽

R.P. Goehner ◽

K.R. Crystal

Keyword(s):

Thin Films ◽

Deep Penetration ◽

X Ray Diffraction ◽

Parallel Beam ◽

X Ray ◽

Beam Geometry ◽

Polycrystalline Thin Films ◽

Glancing Angle ◽

Parallel Beam Geometry

AbstractThe use of conventional θ/2θ diffraction methods for the characterization of polycrystalline thin films is not in general a satisfactory technique due to the relatively deep penetration of x-ray photons in most materials. Glancing incidence diffraction (GID) can compensate for the penetration problems inherent in the θ/2θ geometry. Parallel beam geometry has been developed in conjunction with GID to eliminate the focusing aberrations encountered when performing these types of measurements. During the past yearwe developed a parallel beam attachment which we have successfully configured to a number of systems.

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Characterization of Nano-Scale Defects in Pulsed Laser Deposited (PLD) Thin Films of Li3xNd(2/3-x)(1/3-2x)TiO3 (NLTO) by Aberration Corrected HR-STEM Imaging and Dual-EELS

Microscopy and Microanalysis ◽

10.1017/s1431927620024034 ◽

2020 ◽

Vol 26 (S2) ◽

pp. 3166-3167

Author(s):

Robert Williams ◽

Nuria Bagues ◽

Elahe Farghadany ◽

Alp Sehirlioglu ◽

David McComb

Keyword(s):

Thin Films ◽

Pulsed Laser ◽

Nano Scale ◽

Aberration Corrected

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Application of MEMS force sensors for in situ mechanical characterization of nano-scale thin films in SEM and TEM

Sensors and Actuators A Physical ◽

10.1016/s0924-4247(01)00861-5 ◽

2002 ◽

Vol 97-98 ◽

pp. 239-245 ◽

Cited By ~ 101

Author(s):

M.A. Haque ◽

M.T.A. Saif

Keyword(s):

Thin Films ◽

Mechanical Characterization ◽

Force Sensors ◽

Nano Scale ◽

Sem And Tem

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Interfacial Fracture Characterization of Nano-Scale Thin Films Using Single-Strip Stress-Engineered Superlayer

Electronic and Photonic Packaging, Electrical Systems Design and Photonics, and Nanotechnology ◽

10.1115/imece2006-13504 ◽

2006 ◽

Cited By ~ 2

Author(s):

Jiantao Zheng ◽

Suresh K. Sitaraman

Keyword(s):

Thin Films ◽

Crack Propagation ◽

Interfacial Crack ◽

Interfacial Fracture ◽

Critical Energy ◽

Test Method ◽

Nano Scale ◽

Available Energy ◽

Fracture Parameters

Characterization of interfacial fracture parameters for nano-scale thin films continues to be challenging due to the difficulties associated with preparing samples, fixturing and loading the samples, and extracting and analyzing the experimental data. In this paper, we propose a stress-engineered superlayer test method that can be used to measure the interfacial fracture parameters of nano-scale (as well as micro-scale) thin films without the need for loading fixtures. The proposed test employs the residual stress in sputter-deposited metals to provide the energy for interfacial crack propagation. The innovative aspect of the test is the use of an etchable release layer that is deposited between the two interfacial materials of interest. The release layer is designed such that the available energy for interfacial crack propagation will continue to decrease as the crack propagates, and at the location where the crack ceases to propagate, the available energy for crack propagation will be the critical energy for crack propagation or the interfacial fracture toughness. The proposed test method has been successfully used to characterize Ti thin film on Si substrate.

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