Effect of annealing conditions on the leakage current characteristics of ferroelectric PZT thin films grown by sol–gel process

1999 ◽  
Vol 338 (1-2) ◽  
pp. 149-154 ◽  
Author(s):  
Seong Moon Cho ◽  
Duk Young Jeon
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Annealing Conditions ◽  
Sol Gel Process ◽  
Current Characteristics

The Effect of RuO2/Pt Hybrid Bottom Electrode Structure on The Microstructure and Ferroelectric Properties of Sol-Gel Derived PZT Thin Films

1997 ◽  
Vol 493 ◽  
Author(s):  
Seung-Hyun Kim ◽  
J. G. Hong ◽  
J. C. Gunter ◽  
H. Y. Lee ◽  
S. K. Streiffer ◽  
...  
Keyword(s):  
Thin Films ◽  
Leakage Current ◽  
Bottom Electrode ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Chemical Solution ◽  
Electrode Structure ◽  
Solution Deposition ◽  
Pzt Thin Films ◽  
Chemical Solution Deposition Method

ABSTRACTFerroelectric PZT thin films on thin RuO2 (10, 30, 50nm)/Pt hybrid bottom electrodes were successfully prepared by using a modified chemical solution deposition method. It was observed that the use of a lOnm RuO2Pt bottom electrode reduced leakage current, and gave more reliable capacitors with good microstructure compare to the use of thicker RuO2/Pt bottom electrodes. Typical P-E hysteresis behavior was observed even at an applied voltage of 3V, demonstrating greatly improved remanence and coercivity. Fatigue and breakdown characteristics, measured at 5V, showed stable behavior, and only below 13-15% degradation was observed up to 1010 cycles. Thicker RuO2 layers resulted in high leakage current density due to conducting lead ruthenate or PZT pyrochlore-ruthenate and a rosette-type microstructure.

Glycol-based sol-gel process for the fabrication of ferroelectric PZT thin films

1994 ◽  
Vol 2 (1-3) ◽  
pp. 605-609 ◽  
Author(s):  
Carine Livage ◽  
Ahmad Safari ◽  
Lisa C. Klein
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Sol Gel Process

Chemical structure evolution and orientation selection in sol-gel-prepared ferroelectric Pb(Zr,Ti)O3 thin films

2001 ◽  
Vol 16 (9) ◽  
pp. 2499-2504 ◽  
Author(s):  
L. Fè ◽  
G. J. Norga ◽  
D. J. Wouters ◽  
H. E. Maes ◽  
G. Maes
Keyword(s):  
Thin Films ◽  
Chemical Structure ◽  
Temperature Scale ◽  
Sol Gel ◽  
Structure Evolution ◽  
Orientation Selection ◽  
Pzt Thin Films ◽  
Pt Electrodes ◽  
Sol Gel Process ◽  
Real Temperature

We studied in detail the chemical structure evolution of Pb(Zr1−x, Tix)O3 (PZT) thin films on Pt electrodes during the initial thermal steps of their preparation using an alkoxide-based sol-gel process. Absorption-reflection Fourier transform infrared spectroscopy (AR-FTIRS) was used to monitor chemical reactions occurring in the films on a real temperature scale. We demonstrate that the chemical state of the pyrolyzed film strongly depends on pyrolysis conditions and can have a large effect on the orientation selection in the film. First, residual acetate groups, resulting from incomplete decomposition of the Pb acetate precursor, strengthen the (111) PZT texture component after crystallization. Second, OH bonds, which are seen to remain in the film after pyrolysis under specific conditions, are seen to strengthen the intensity of the PZT(100) reflection. Possible mechanisms behind these observations are discussed.

scholarly journals Robust ferroelectricity enhancement of PZT thin films by a homogeneous seed layer

2021 ◽  
Author(s):  
jie jiang ◽  
Lei Liu ◽  
Kuo Ouyang ◽  
Zhouyu Chen ◽  
Shengtao Mo ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Remanent Polarization ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Large Dielectric Constant ◽  
Sol Gel Process ◽  
A New Technique

Abstract With its excellent ferroelectric properties such as large dielectric constant and large remanent polarization, PZT thin films are extensively used in micro-sensors and other devices. In this study, the sol-gel process was used to fabricate Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seed islands. The experimental consequences demonstrate that all the Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seeds show pure perovskite phase with no other impurity phases, and the electrical properties of Pb(Zr0.52Ti0.48)O3 thin films modified by Pb(ZrxTi1−x)O3 seed islands with different Zr/Ti ratios are improved, such as remanent polarization increased, dielectric properties increased, coercive electric field decreased, leakage current density decreased, etc. In particular, the electrical properties of the Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seed islands are the most optimal when the x is 0.52. This paper provides a new technique for optimizing the electrical properties of PZT thin films, which is of great significance for breaking through the bottleneck of the development of ferroelectric memory.

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