Chemical structure evolution and orientation selection in sol-gel-prepared ferroelectric Pb(Zr,Ti)O3 thin films

2001 ◽  
Vol 16 (9) ◽  
pp. 2499-2504 ◽  
Author(s):  
L. Fè ◽  
G. J. Norga ◽  
D. J. Wouters ◽  
H. E. Maes ◽  
G. Maes
Keyword(s):  
Thin Films ◽  
Chemical Structure ◽  
Temperature Scale ◽  
Sol Gel ◽  
Structure Evolution ◽  
Orientation Selection ◽  
Pzt Thin Films ◽  
Pt Electrodes ◽  
Sol Gel Process ◽  
Real Temperature

We studied in detail the chemical structure evolution of Pb(Zr1−x, Tix)O3 (PZT) thin films on Pt electrodes during the initial thermal steps of their preparation using an alkoxide-based sol-gel process. Absorption-reflection Fourier transform infrared spectroscopy (AR-FTIRS) was used to monitor chemical reactions occurring in the films on a real temperature scale. We demonstrate that the chemical state of the pyrolyzed film strongly depends on pyrolysis conditions and can have a large effect on the orientation selection in the film. First, residual acetate groups, resulting from incomplete decomposition of the Pb acetate precursor, strengthen the (111) PZT texture component after crystallization. Second, OH bonds, which are seen to remain in the film after pyrolysis under specific conditions, are seen to strengthen the intensity of the PZT(100) reflection. Possible mechanisms behind these observations are discussed.

Glycol-based sol-gel process for the fabrication of ferroelectric PZT thin films

1994 ◽  
Vol 2 (1-3) ◽  
pp. 605-609 ◽  
Author(s):  
Carine Livage ◽  
Ahmad Safari ◽  
Lisa C. Klein
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Sol Gel Process

scholarly journals Robust ferroelectricity enhancement of PZT thin films by a homogeneous seed layer

2021 ◽  
Author(s):  
jie jiang ◽  
Lei Liu ◽  
Kuo Ouyang ◽  
Zhouyu Chen ◽  
Shengtao Mo ◽  
...  
Keyword(s):  
Thin Films ◽  
Electrical Properties ◽  
Remanent Polarization ◽  
Perovskite Phase ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Large Dielectric Constant ◽  
Sol Gel Process ◽  
A New Technique

Abstract With its excellent ferroelectric properties such as large dielectric constant and large remanent polarization, PZT thin films are extensively used in micro-sensors and other devices. In this study, the sol-gel process was used to fabricate Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seed islands. The experimental consequences demonstrate that all the Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seeds show pure perovskite phase with no other impurity phases, and the electrical properties of Pb(Zr0.52Ti0.48)O3 thin films modified by Pb(ZrxTi1−x)O3 seed islands with different Zr/Ti ratios are improved, such as remanent polarization increased, dielectric properties increased, coercive electric field decreased, leakage current density decreased, etc. In particular, the electrical properties of the Pb(Zr0.52Ti0.48)O3 thin films with Pb(ZrxTi1−x)O3 seed islands are the most optimal when the x is 0.52. This paper provides a new technique for optimizing the electrical properties of PZT thin films, which is of great significance for breaking through the bottleneck of the development of ferroelectric memory.

Growth of highly (100)-oriented Zr-rich PZT thin films on Pt/Ti/SiO2/Si substrates by a simple sol–gel process

2000 ◽  
Vol 220 (1-2) ◽  
pp. 82-87 ◽  
Author(s):  
Xiaorong Fu ◽  
Jinhua Li ◽  
Zhitang Song ◽  
Chenglu Lin
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Si Substrates ◽  
Sol Gel Process

The effect of Mn/Nb doping on dielectric and ferroelectric properties of PZT thin films prepared by sol–gel process

2015 ◽  
Vol 74 (2) ◽  
pp. 378-386 ◽  
Author(s):  
Huajun Sun ◽  
Yong Zhang ◽  
Xiaofang Liu ◽  
Shanshan Guo ◽  
Yi Liu ◽  
...  
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Pzt Thin Films ◽  
Sol Gel Process ◽  
Nb Doping

The Characterization and Electrical Properties of DOPED PZT Thin Films Prepared by Sol-Gel Processing

1994 ◽  
Vol 361 ◽  
Author(s):  
Wan In Lee ◽  
J.K. Lee ◽  
Elsub Chung ◽  
C.W. Chung ◽  
I.K. Yoo ◽  
...  
Keyword(s):  
Thin Films ◽  
Grain Size ◽  
Remanent Polarization ◽  
Ferroelectric Properties ◽  
Sol Gel ◽  
Current Level ◽  
Pzt Thin Films ◽  
Sol Gel Process ◽  
Pzt Films ◽  
Gel Processing

ABSTRACTPZT (Zr/Ti = 53/47), PNZT (4% Nb doped PZT), PSZT (2% Sc doped PZT), and PSNZT (1% Sc and 1% Nb doped PZT) thin films were prepared by a sol-gel process. They were characterized by XRD, SEM and TEM. Both crystallographic orientation and grain size of PZT films can be changed by doping. Pt/PZT/Pt capacitors were fabricated for the measurement of ferroelectric properties. By doping with both Sc and Nb, the fatigue performance of the PZT films was considerably improved and the coercive field was decreased, while the remanent polarization was not changed. In addition, the effect of dopants on the leakage current level of PZT films was studied.

Sol-Gel Process and Properties of Textured Pb(Zr, Ti)O3 Films on Silicon Wafers

2007 ◽  
Vol 280-283 ◽  
pp. 239-242 ◽  
Author(s):  
Wen Gong ◽  
Xiang Cheng Chu ◽  
Jing Feng Li ◽  
Zhi Lun Gui ◽  
Long Tu Li
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Lead Zirconate ◽  
Silicon Wafers ◽  
Seeding Layer ◽  
Pzt Thin Films ◽  
Pzt Film ◽  
Sol Gel Process ◽  
Pzt Films

Lead zirconate titanate (PZT) thin films with a composition near the morphotropic phase boundary were deposited on silicon wafers by using a modified sol-gel method. Introducing a seeding layer between the interface of PZT film and platinum electrode controlled the texture of PZT films. The lead oxide seeding layer results in highly (001)-textured PZT film, while the titanium dioxide seeding layer results in (111)-textured one. SEM and XRD were used to characterize the PZT thin films. The ferroelectric and piezoelectric properties of the PZT films were evaluated and discussed in association with different preferential orientations.

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