Preparation and characterization of Bi2Ti2O7 thin films by chemical solution deposition technique

2000 ◽  
Vol 370 (1-2) ◽  
pp. 30-32 ◽  
Author(s):  
XianMing Wu ◽  
Sh.W. Wang ◽  
H. Wang ◽  
Z. Wang ◽  
S.X. Shang ◽  
...  
1999 ◽  
Vol 14 (5) ◽  
pp. 1860-1864 ◽  
Author(s):  
C. R. Foschini ◽  
P. C. Joshi ◽  
J. A. Varela ◽  
S. B. Desu

We report on the properties of BaBi2Ta2O9 (BBT) thin films for dynamic random-access memory (DRAM) and integrated capacitor applications. Crystalline BBT thin films were successfully fabricated by the chemical solution deposition technique on Pt-coated Si substrates at a low annealing temperature of 650 °C. The films were characterized in terms of structural, dielectric, and insulating properties. The electrical measurements were conducted on Pt/BBT/Pt capacitors. The typical measured small signal dielectric constant and dissipation factor, at 100 kHz, were 282 and 0.023, respectively, for films annealed at 700 °C for 60 min. The leakage current density of the films was lower than 10−9 A/cm2 at an applied electric field of 300 kV/cm. A large storage density of 38.4 fC/μm2 was obtained at an applied electric field of 200 kV/cm. The high dielectric constant, low dielectric loss and low leakage current density suggest the suitability of BBT thin films as dielectric layer for DRAM and integrated capacitor applications.


2007 ◽  
Vol 27 (13-15) ◽  
pp. 4417-4420 ◽  
Author(s):  
V. Fruth ◽  
M. Popa ◽  
J.M. Calderon-Moreno ◽  
E.M. Anghel ◽  
D. Berger ◽  
...  

2005 ◽  
Vol 88 (5) ◽  
pp. 1312-1314 ◽  
Author(s):  
Peter Jorg Schorn ◽  
Theodor Schneller ◽  
Ulrich Bottger ◽  
Rainer Waser

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