Characterization of amorphous silicon carbon alloys by IBA technique and optical spectroscopy

Vacuum ◽  
2002 ◽  
Vol 67 (3-4) ◽  
pp. 519-523 ◽  
Author(s):  
D Gracin ◽  
M Jaksic ◽  
I Bogdanovic-Radovic ◽  
Z Medunic ◽  
T Car ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Optical Spectroscopy ◽  
Silicon Carbon

Characterization of hydrogenated amorphous silicon-carbon films deposited by hybrid-plasma CVD

1994 ◽  
Vol 34 (1-4) ◽  
pp. 409-414 ◽  
Author(s):  
Tadashi Fujii ◽  
Kenji Sameshima ◽  
Hiroshi Okada ◽  
Kenji Yoshida ◽  
Tadao Hashimoto ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Carbon Films ◽  
Plasma Cvd ◽  
Silicon Carbon ◽  
Hybrid Plasma ◽  
Hydrogenated Amorphous

Photoelectron spectroscopy study of amorphous silicon-carbon alloys deposited by plasma-enhanced chemical vapor deposition

1996 ◽  
Vol 11 (12) ◽  
pp. 3017-3023 ◽  
Author(s):  
G. Cicala ◽  
G. Bruno ◽  
P. Capezzuto ◽  
P. Favia
Keyword(s):  
Amorphous Silicon ◽  
Vapor Deposition ◽  
Photoelectron Spectroscopy ◽  
Optical Transmission ◽  
Chemical Vapor ◽  
Spectroscopy Study ◽  
Air Oxidation ◽  
X Ray ◽  
Silicon Carbon

X-ray photoelectron spectroscopy (XPS) coupled with Fourier transform infrared (FTIR) and optical transmission spectroscopy (OTS) has been used for the characterization of silicon-carbon alloys (a-Si1−xCx: H, F) deposited via plasma, by varying the CH4 amount in SiF4–CH4–H2 feeding mixture. XPS measurements have shown that carbon-rich a-Si1−xCx: H, F alloys include large amounts of fluorine (>11 at. %), which make the films susceptible to the air oxidation. In addition, the effect of the alloying partner carbon on the valence band (VB) and on the VB edge position of amorphous silicon is also described.

Growth and Characterization of Hydrogenated Amorphous Silicon using Liquid Organic Sources

1991 ◽  
Vol 219 ◽  
Author(s):  
K. Gaughan ◽  
S. Hershgold ◽  
J. M. Viner ◽  
P. C. Taylor
Keyword(s):  
Thin Films ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Wide Band ◽  
Discharge Process ◽  
Wide Band Gap ◽  
Silicon Carbon ◽  
Rf Glow Discharge ◽  
Hydrogenated Amorphous

ABSTRACTThe uses of liquid sources such as tertiarybutylphosphine (TBP) for n-type doping in hydrogenated amorphous silicon (a-Si:H) and ditertiarybutylsilane (DTBS) and n-butylsilane (NBS) for hydrogenated amorphous silicon-carbon alloys (a-SiC:H) are described. A rf glow discharge process is employed to produce the doped a-Si:H and a-SiC:H thin films. Tertiarybutylphosphine (TBP) may ultimately be preferred over phosphine because TBP is less toxic, less pyrophoric and safer to implement. The gross doping properties of a-Si:H doped with TBP are the same as those obtained with phosphine, but there are some differences. N-butylsilane (NBS) and DTBS have been used to produce wide band gap (E04 3 ≈ eV) a-SiC:H.

Growth and characterization of silicon nanocrystallites embedded in amorphous silicon carbon matrix by PECVD

2012 ◽  
Vol 9 (10-11) ◽  
pp. 1869-1872 ◽  
Author(s):  
U. Coscia ◽  
G. Ambrosone ◽  
D. K. Basa ◽  
V. Rigato ◽  
M. Ballarini ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Carbon Matrix ◽  
Silicon Carbon ◽  
Silicon Nanocrystallites
Sign in / Sign up

Export Citation Format

Share Document