Surface ionization molecular beam detector with a magnetic mass filter: application to absolute differential reactive cross section measurements. (GB)

Vacuum ◽  
1976 ◽  
Vol 26 (12) ◽  
pp. 558

1974 ◽  
Vol 60 (7) ◽  
pp. 2822-2827 ◽  
Author(s):  
A. M. Rulis ◽  
B. E. Wilcomb ◽  
R. B. Bernstein




Author(s):  
S. H. Chen

Sn has been used extensively as an n-type dopant in GaAs grown by molecular-beam epitaxy (MBE). The surface accumulation of Sn during the growth of Sn-doped GaAs has been observed by several investigators. It is still not clear whether the accumulation of Sn is a kinetically hindered process, as proposed first by Wood and Joyce, or surface segregation due to thermodynamic factors. The proposed donor-incorporation mechanisms were based on experimental results from such techniques as secondary ion mass spectrometry, Auger electron spectroscopy, and C-V measurements. In the present study, electron microscopy was used in combination with cross-section specimen preparation. The information on the morphology and microstructure of the surface accumulation can be obtained in a fine scale and may confirm several suggestions from indirect experimental evidence in the previous studies.





1994 ◽  
Vol 65 (5) ◽  
pp. 1766-1769 ◽  
Author(s):  
Hiroyuki Kawano ◽  
Katsushi Ohgami ◽  
Kiyohiko Funato ◽  
Junji Nakamura


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