Physico-chemical characterization of β-In2S3 thin films synthesized by solid-state reaction, induced by annealing, of the constituents sequentially deposited in thin layers

Vacuum ◽  
2000 ◽  
Vol 56 (2) ◽  
pp. 101-106 ◽  
Author(s):  
N Barreau ◽  
S Marsillac ◽  
J.C Bernède
ChemInform ◽  
2004 ◽  
Vol 35 (25) ◽  
Author(s):  
A. Marini ◽  
V. Berbenni ◽  
G. Bruni ◽  
P. Cofrancesco ◽  
F. Giordano ◽  
...  

2001 ◽  
Vol 382 (1-2) ◽  
pp. 39-46 ◽  
Author(s):  
M.C Zouaghi ◽  
T.Ben Nasrallah ◽  
S Marsillac ◽  
J.C Bernède ◽  
S Belgacem

1991 ◽  
Vol 28 (4) ◽  
pp. 347-354 ◽  
Author(s):  
J.C. Bernede ◽  
N. Manai ◽  
J. Pouzet ◽  
M. Morsli ◽  
A. Ouadah

2003 ◽  
Vol 2 (4) ◽  
pp. 303-321 ◽  
Author(s):  
A. Marini ◽  
V. Berbenni ◽  
G. Bruni ◽  
P. Cofrancesco ◽  
F. Giordano ◽  
...  

2000 ◽  
Vol 181 (2) ◽  
pp. 405-412 ◽  
Author(s):  
H. Dlala ◽  
M. Amlouk ◽  
T. Ben Nasrallah ◽  
J.C. Bernede ◽  
S. Belgacem

1997 ◽  
Vol 109-110 ◽  
pp. 218-221 ◽  
Author(s):  
S Beauvois ◽  
D Renaut ◽  
R Lazzaroni ◽  
L.D Laude ◽  
J.L Bredas

1995 ◽  
Vol 402 ◽  
Author(s):  
Z. Wang ◽  
D. B. Aldrich ◽  
P. Goeller ◽  
R. J. Nemanich ◽  
D. E. Sayers

AbstractWe have investigated the electrical and structural properties of zirconium germanosilicide (Zr-Si-Ge) films formed during the Zr-Sil−xGex solid state reaction. Thin films of C49 Zr(Si1−xGex)2 were formed from the solid phase reaction of Zr and Si1−xGex bilayer structures. It was observed that Zr reacts uniformly with the Sil−xGex alloy and that C49 Zr(Si1−x Gex)2 is the final phase of the Zr-Si1−xGex, solid phase reaction (such tht y = x) for all compositions examined (x = 0.20, 0.33, and 0.50). The sheet resistance of the Zr(Si1−xGex)2 thin films were higher than the sheet resistance measured for ZrSi2 films. The stability of Zr(Sil−x Gex)2 in contact with Si1−Gex was investigated and no germanium segregation was detected in the Zr(Si1−xGex)2/Si1−Gex structures.


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