The Human Growth Process from Infancy to Maturity

The work presented here puts forward a fractal aspect of natural growth. The S-shaped pattern of a logistic function is analyzed in terms of several constituent logistic functions. The approach sheds light on two familiar phenomena: the undulatory evolution of growth, which gives rise to an alternation between high-and low-growth periods, and the increasingly noticeable shrinking life cycle of products. There are some economic and political implications for the European nations. A quantitative example is given for computer sales from Digital Equipment Corporation. The approach is further generalized to suggest that any growth process can be analyzed in terms of natural-growth subprocesses. Applied to human growth this analysis yields precise definitions for the timing of transitions such as babyhood to childhood, and childhood to adolescence.

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KAJIAN ELEMEN VISUAL ARSITEKTUR TERKAIT PERSEPSI ANAK USIA DINI TERHADAP BANGUNAN

Idealog Ide dan Dialog Desain Indonesia ◽

10.25124/idealog.v4i1.1557 ◽

2019 ◽

Vol 4 (1) ◽

pp. 1

Author(s):

Astrid Austranti Yuwono

Keyword(s):

Visual Perception ◽

Golden Age ◽

Growth Process ◽

Dominant Role ◽

Human Growth ◽

Growth Period ◽

Work Of Art ◽

Perception Theory

Architecture is intended for users with long-term consideration.An architecture is a work of art that does not only belong to the creator of the work but also involves other people, users and observers.Early age in a human growth process is an important phase that needs special attention. It is also called as The Golden Age. One type of perception that has an important role in a child's growth period is visual perception.Through visual perception, a child learns to see differences, similarities, and groupings. The building is the result of the realization of an analysis of users, functions and ideas. Toddlersisone of the users who need special attention. Designer's understanding of what is needed by an early childandhow a child's perspectivein seeing their environment arestill not fully addressed. This study examines architectural elementsthat have more dominant role to be considered by toddlerswith the basis of perception theory. The method used in relation to respondents who are toddlersis to describe buildings based on their respective perceptionsby drawing. The results obtained in this study isthat the architectural elementsthat can be re-perceived by the respondent clearly are the shape and dimensions.

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Fundamental Research into Thin Films in a Developing Country

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100095753 ◽

1972 ◽

Vol 30 ◽

pp. 500-501

Author(s):

J.A. Eades ◽

E. Grünbaum

Keyword(s):

Thin Films ◽

Growth Process ◽

Empirical Process ◽

Nucleation And Growth ◽

Research Groups ◽

Film Research ◽

Fundamental Research ◽

Controlled Deposition ◽

The One ◽

The University

In the last decade and a half, thin film research, particularly research into problems associated with epitaxy, has developed from a simple empirical process of determining the conditions for epitaxy into a complex analytical and experimental study of the nucleation and growth process on the one hand and a technology of very great importance on the other. During this period the thin films group of the University of Chile has studied the epitaxy of metals on metal and insulating substrates. The development of the group, one of the first research groups in physics to be established in the country, has parallelled the increasing complexity of the field.The elaborate techniques and equipment now needed for research into thin films may be illustrated by considering the plant and facilities of this group as characteristic of a good system for the controlled deposition and study of thin films.

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UHV-STM studies of silicon nano-pyramid growth on silicon surface at high temperature

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100130353 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1144-1145

Author(s):

T. Sato ◽

S. Kitamura ◽

T. Sueyoshl ◽

M. Iwatukl ◽

C. Nielsen

Keyword(s):

High Temperature ◽

Relaxation Process ◽

Thermal Effect ◽

Bias Voltage ◽

Silicon Surface ◽

Growth Process ◽

Tunneling Current ◽

Fabrication Technique ◽

Nano Fabrication ◽

Electromigration Effect

Recently, the growth process and relaxation process of crystalline structures were studied by observing a SI nano-pyramid which was built on a Si surface with a UHV-STM. A UHV-STM (JEOL JSTM-4000×V) was used for studying a heated specimen, and the specimen was kept at high temperature during observation. In this study, the nano-fabrication technique utilizing the electromigration effect between the STM tip and the specimen was applied. We observed Si atoms migrated towords the tip on a high temperature Si surface.Clean surfaces of Si(lll)7×7 and Si(001)2×l were prepared In the UHV-STM at a temperature of approximately 600 °C. A Si nano-pyramid was built on the Si surface at a tunneling current of l0nA and a specimen bias voltage of approximately 0V in both polarities. During the formation of the pyramid, Images could not be observed because the tip was stopped on the sample. After the formation was completed, the pyramid Image was observed with the same tip. After Imaging was started again, the relaxation process of the pyramid started due to thermal effect.

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Effects of substrate quality and annealing on defect structures at GaAs/Si interfaces

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126494 ◽

1987 ◽

Vol 45 ◽

pp. 340-341

Author(s):

H. L. Tsai ◽

J. W. Lee

Keyword(s):

Growth Process ◽

Molecular Beam ◽

Substrate Surface ◽

Lattice Misfit ◽

Device Fabrication ◽

Silicon Substrates ◽

Defect Structures ◽

Gaas Film ◽

Substrate Quality ◽

Gaas On Si

Growth of GaAs on Si using epitaxial techniques has been receiving considerable attention for its potential application in device fabrication. However, because of the 4% lattice misfit between GaAs and Si, defect generation at the GaAs/Si interface and its propagation to the top portion of the GaAs film occur during the growth process. The performance of a device fabricated in the GaAs-on-Si film can be degraded because of the presence of these defects. This paper describes a HREM study of the effects of both the substrate surface quality and postannealing on the defect propagation and elimination.The silicon substrates used for this work were 3-4 degrees off [100] orientation. GaAs was grown on the silicon substrate by molecular beam epitaxy (MBE).

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