Characterization and modeling of the tunneling current in Si–SiO2–Si structures with ultra-thin oxide layer
2001 ◽
Vol 59
(1-4)
◽
pp. 127-136
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2015 ◽
Vol 7
(4)
◽
pp. 331-333
◽
Keyword(s):
1993 ◽
Vol 34
(12)
◽
pp. 2099-2104
◽
Keyword(s):
Keyword(s):
1995 ◽
Vol 38
(8)
◽
pp. 1465-1471
◽
1984 ◽
Vol 23
(Part 1, No. 3)
◽
pp. 283-285
◽
Abstract: Influence of a thin oxide layer between metal and semiconductor on Schottky diode behavior
1976 ◽
Vol 13
(4)
◽
pp. 873-873
◽
2013 ◽
Vol 64
(3)
◽
pp. 31301
Keyword(s):