Effect of Image Force on Tunneling Current for Ultra Thin Oxide Layer Based Metal Oxide Semiconductor Devices

Nanoscience and Nanotechnology Letters ◽

10.1166/nnl.2015.1970 ◽

2015 ◽

Vol 7 (4) ◽

pp. 331-333 ◽

Author(s):

N. P. Maity ◽

R. Maity ◽

R. K. Thapa ◽

S. Baishya

Keyword(s):

Metal Oxide ◽

Oxide Layer ◽

Semiconductor Devices ◽

Tunneling Current ◽

Image Force ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Thin Oxide Layer ◽

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Image Force Effect on Tunneling Current for Ultra Thin High-K Dielectric Material Al2O3 Based Metal Oxide Semiconductor Devices

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2015.1812 ◽

2015 ◽

Vol 10 (5) ◽

pp. 645-648 ◽

Author(s):

N. P. Maity ◽

R. Maity ◽

R. K. Thapa ◽

S. Baishya

Keyword(s):

Metal Oxide ◽

Dielectric Material ◽

Semiconductor Devices ◽

Tunneling Current ◽

Image Force ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Force Effect ◽

High K ◽

High K Dielectric

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Scaling size distribution of oxide defects, trema‐fractal oxide layer, and breakdown statistics of metal‐oxide‐semiconductor devices

Applied Physics Letters ◽

10.1063/1.101414 ◽

1989 ◽

Vol 54 (9) ◽

pp. 834-836 ◽

Author(s):

R. D. S. Yadava

Keyword(s):

Metal Oxide ◽

Size Distribution ◽

Oxide Layer ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

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Electron-drag effect in Si metal-oxide-semiconductor devices with thin oxide layers

Physical Review B ◽

10.1103/physrevb.72.125338 ◽

2005 ◽

Vol 72 (12) ◽

Author(s):

Boris Laikhtman ◽

Paul M. Solomon

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Drag Effect ◽

Oxide Layers ◽

Electron Drag ◽

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Fully Quantum-Mechanical Calculation of Hole Direct Tunneling Current in Ultrathin Gate Oxide p-Channel Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.552 ◽

2002 ◽

Vol 41 (Part 1, No. 2A) ◽

pp. 552-556 ◽

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Quantum Mechanical Calculation ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Calculation ◽

Direct Tunneling Current

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Quantum-Mechanical Simulation of Gate Tunneling Current in Accumulated n-Channel Metal-Oxide-Semiconductor Devices with n+-Polysilicon Gates

Japanese Journal of Applied Physics ◽

10.1143/jjap.41.5094 ◽

2002 ◽

Vol 41 (Part 1, No. 8) ◽

pp. 5094-5097 ◽

Author(s):

Hideyuki Iwata ◽

Toshihiro Matsuda ◽

Takashi Ohzone

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Simulation ◽

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Gate tunneling current and quantum capacitance in metal-oxide-semiconductor devices with graphene gate electrodes

Applied Physics Letters ◽

10.1063/1.4968824 ◽

2016 ◽

Vol 109 (22) ◽

pp. 223104 ◽

Author(s):

Yanbin An ◽

Aniruddh Shekhawat ◽

Ashkan Behnam ◽

Eric Pop ◽

Ant Ural

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Capacitance ◽

Gate Electrodes ◽

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Tunneling spectroscopy possibilities in metal-oxide-semiconductor devices with a very thin oxide barrier

Thin Solid Films ◽

10.1016/0040-6090(92)90126-v ◽

1992 ◽

Vol 207 (1-2) ◽

pp. 213-219 ◽

Author(s):

G. Salace ◽

J.M. Patat

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Spectroscopy ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxide Barrier ◽

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GaN-based p-type metal-oxide–semiconductor devices with a gate oxide layer grown by a bias-assisted photoelectrochemical oxidation method

Semiconductor Science and Technology ◽

10.1088/0268-1242/25/4/045020 ◽

2010 ◽

Vol 25 (4) ◽

pp. 045020 ◽

Author(s):

Ya-Lan Chiou ◽

Li-Hsien Huang ◽

Ching-Ting Lee

Keyword(s):

Metal Oxide ◽

Oxide Layer ◽

Semiconductor Devices ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Oxidation Method ◽

Photoelectrochemical Oxidation ◽

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Fully Quantum-Mechanical Modeling of Tunneling Current in Ultrathin Gate Oxide Metal-Oxide-Semiconductor Devices

Japanese Journal of Applied Physics ◽

10.1143/jjap.40.4496 ◽

2001 ◽

Vol 40 (Part 1, No. 7) ◽

pp. 4496-4500 ◽

Author(s):

Hideyuki Iwata

Keyword(s):

Metal Oxide ◽

Semiconductor Devices ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Quantum Mechanical ◽

Mechanical Modeling

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Temperature dependence of the tunneling current in metal-oxide-semiconductor devices due to the coupling between the longitudinal and transverse components of the electron thermal energy

Applied Physics Letters ◽

10.1063/1.2735929 ◽

2007 ◽

Vol 90 (18) ◽

pp. 183511 ◽

Author(s):

Ling-Feng Mao

Keyword(s):

Metal Oxide ◽

Temperature Dependence ◽

Thermal Energy ◽

Semiconductor Devices ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor

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