Effects of Gas Environments on Porous Silicon Photoluminescence

1999 ◽  
Vol 560 ◽  
Author(s):  
G. Di Francia ◽  
V. La Ferrara ◽  
L. Lancellotti ◽  
L. Quercia ◽  
T. Fasolino
Keyword(s):  
Porous Silicon ◽  
Oxide Layer ◽  
Electrochemical Etching ◽  
Peak Wavelength ◽  
Laser Illumination ◽  
Dry Air ◽  
Thin Oxide Layer ◽  
Thin Oxide ◽  
Photoluminescence Response

ABSTRACTThe photoluminescence response of a series of porous silicon samples, obtained by electrochemical etching of n-type CZ-silicon, has been recorded in various gas environments. A quenching is reported when porous silicon is in the presence of an oxidising ambient (dry air or acetone vapours in dry air). Process reversibility depends on the duration of laser illumination. Quenching is also recorded if porous silicon is in the presence of acetone vapours in nitrogen ambient, where complete reversibility is however shown. Moreover, the peak wavelength is red shifted in dry air and blue shifted in acetone vapours. Irreversible quenching is related to the growth of a thin oxide layer on the emitting nanostrucures.

Suppression of thermal runaway by continuous heat generation using porous silicon covered with a thin oxide layer

2021 ◽  
Vol 506 ◽  
pp. 230209
Author(s):  
Hideyuki Nakano ◽  
Takao Inoue ◽  
Takeshi Uyama ◽  
Takamasa Nonaka ◽  
Kazuhiko Mukai
Keyword(s):  
Porous Silicon ◽  
Oxide Layer ◽  
Heat Generation ◽  
Thermal Runaway ◽  
Thin Oxide Layer ◽  
Thin Oxide ◽  
Continuous Heat

Further evidence for the presence of residual flaws in a thin oxide layer covering high purity aluminium

1993 ◽  
Vol 34 (12) ◽  
pp. 2099-2104 ◽  
Author(s):  
G.M. Brown ◽  
K. Shimizu ◽  
K. Kobayashi ◽  
G.E. Thompson ◽  
G.C. Wood
Keyword(s):  
Oxide Layer ◽  
High Purity ◽  
Thin Oxide Layer ◽  
Purity Aluminium ◽  
High Purity Aluminium ◽  
Thin Oxide

Determination of tunnelling parameters in ultra-thin oxide layer poly-Si/SiO2/Si structures

1995 ◽  
Vol 38 (8) ◽  
pp. 1465-1471 ◽  
Author(s):  
M Depas ◽  
B Vermeire ◽  
P.W Mertens ◽  
R.L Van Meirhaeghe ◽  
M.M Heyns
Keyword(s):  
Oxide Layer ◽  
Thin Oxide Layer ◽  
Thin Oxide

Mössbauer Studies of Very Thin Oxide Layer on Fe Surface

1984 ◽  
Vol 23 (Part 1, No. 3) ◽  
pp. 283-285 ◽  
Author(s):  
Teruya Shinjo ◽  
Takashi Iwasaki ◽  
Toshihiko Shigematsu ◽  
Toshio Takada
Keyword(s):  
Oxide Layer ◽  
Mössbauer Studies ◽  
Thin Oxide Layer ◽  
Thin Oxide

scholarly journals Tuning the Limiting Thickness of a Thin Oxide Layer on Al(111) with Oxygen Gas Pressure

2011 ◽  
Vol 107 (3) ◽  
Author(s):  
Na Cai ◽  
Guangwen Zhou ◽  
Kathrin Müller ◽  
David E. Starr
Keyword(s):  
Oxide Layer ◽  
Gas Pressure ◽  
Thin Oxide Layer ◽  
Oxygen Gas ◽  
Thin Oxide

Origin of Mosaic Structure Obtained During the Production of Porous Silicon with Electrochemical Etching

2019 ◽  
Vol 11 (12) ◽  
pp. 1218-1224
Author(s):  
Dao Tran Cao ◽  
Cao Tuan Anh ◽  
Luong Truc Quynh Ngan
Keyword(s):  
Porous Silicon ◽  
Oxide Layer ◽  
Current Density ◽  
Silicon Oxide ◽  
Electrochemical Etching ◽  
Silicon Layer ◽  
Mosaic Structure ◽  
Anodic Current Density ◽  
Anodic Current ◽  
Silicon Oxide Layer

So far, while producing porous silicon (PSi) with anodic etching of silicon in an aqueous solution of hydrofluoric acid, many researchers (including us) have obtained the crack-into-pieces (or mosaic) structure. Most of the authors believed that the cause of this structure is the collapse and the cracking of the porous, especially highly porous, silicon layer which took place during the drying of PSi after fabrication. However, our study showed that the mosaic structure was formed right during the course of silicon anodization at high anodic current density. Furthermore, our study also showed that at high anodic current density the real silicon etching has been replaced by the growth of a silicon oxide layer. This is a layer of another substance that grows on silicon, so when the layer is too thick (which is obtained when the anodic current density is too high and/or the anodization time is too long) it will crack, creating mosaic pieces. When the silicon oxide layer is cracked, the locations around the cracks will be etched more violently than elsewhere, creating trenches. Thus, the mosaic structure with mosaic pieces emerged between the trenches has formed.

Abstract: Influence of a thin oxide layer between metal and semiconductor on Schottky diode behavior

1976 ◽  
Vol 13 (4) ◽  
pp. 873-873 ◽  
Author(s):  
E. H. Nicollian ◽  
B. Schwartz ◽  
D. J. Coleman ◽  
R. M. Ryder ◽  
J. R. Brews
Keyword(s):  
Oxide Layer ◽  
Schottky Diode ◽  
Thin Oxide Layer ◽  
Thin Oxide ◽  
Diode Behavior
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