Joining YSZ electrolyte to AISI 441 interconnect for solid oxide cells using the Ag interlayer: Enhanced mechanical and aging properties

Conventional Ag-CuO braze can lead to two electrolyte/interconnect joining issues: over-oxidation at the steel interconnect and hydrogen-induced decomposition of CuO. This work demonstrates that a pure Ag interlayer, instead of Ag-CuO braze, can join YSZ electrolyte to AISI 441 interconnect in air. Reliable joining between YSZ and AISI 441 can be realized at 920 °C. A dense and thin oxide layer (~2 μm) is formed at the AISI 441 interface. Also, an interatomic joining at the YSZ/Ag interface is detected by TEM observation. Obtained joints display high shear strengths (~86.1 MPa), 161% higher than that of joints brazed by Ag-CuO braze (~33 MPa). After aging in reducing and oxidizing atmospheres (800 °C/300 h), joints remain tight and dense, indicating a better aging performance. This technique eliminates the CuO-induced issues, which will extend lifetimes for SOFC/SOEC stacks and other ceramic/metal joining applications.

Wafer-scale two-dimensional semiconductors from printed oxide skin of liquid metals

A variety of deposition methods for two-dimensional crystals have been demonstrated; however, their wafer-scale deposition remains a challenge. Here we introduce a technique for depositing and patterning of wafer-scale two-dimensional metal chalcogenide compounds by transforming the native interfacial metal oxide layer of low melting point metal precursors (group III and IV) in liquid form. In an oxygen-containing atmosphere, these metals establish an atomically thin oxide layer in a self-limiting reaction. The layer increases the wettability of the liquid metal placed on oxygen-terminated substrates, leaving the thin oxide layer behind. In the case of liquid gallium, the oxide skin attaches exclusively to a substrate and is then sulfurized via a relatively low temperature process. By controlling the surface chemistry of the substrate, we produce large area two-dimensional semiconducting GaS of unit cell thickness (∼1.5 nm). The presented deposition and patterning method offers great commercial potential for wafer-scale processes.