scholarly journals Correlation of the charge collection efficiency of GaAs particle detectors with material properties

1996 ◽  
Vol 380 (1-2) ◽  
pp. 46-49 ◽  
Author(s):  
K Berwick ◽  
M.R Brozel ◽  
C.M Buttar ◽  
J.S Pooni ◽  
P.J Sellin ◽  
...  
Keyword(s):  
Material Properties ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Particle Detectors ◽  
Charge Collection Efficiency

Semi-Insulating InP Particle Detectors For X- And γ-Ray Detection

1997 ◽  
Vol 487 ◽  
Author(s):  
P. G. Pelfer ◽  
F. Dubecký ◽  
R. Fomari ◽  
M. Pikna ◽  
M. Krempaský ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Energy Resolution ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Back Contact ◽  
X Rays ◽  
Particle Detectors ◽  
Charge Collection Efficiency ◽  
Γ Ray ◽  
Α Particles

AbstractA study of electrical properties and detection performances of the semi-insulating (SI) InP based detectors is presented. Detectors with a top P+ layer and a Schottky back contact give the charge collection efficiency about 90 % and an energy resolution 3.7% (FWHM) for 5.48MeV α-particles at 250 K. Detection of X-rays (122 keV and 60 keV) photons in temperature region 220–250 K is demonstrated. Multiple peaking observed during detection of photons is discussed.

Studies of Charge Collection in GaAs Radiation Detectors

1993 ◽  
Vol 302 ◽  
Author(s):  
K Berwick ◽  
M R Brozel ◽  
C M Butiar ◽  
M Cowperthwaite ◽  
Y Hou
Keyword(s):  
Electric Field ◽  
Collection Efficiency ◽  
Radiation Detectors ◽  
Alpha Particles ◽  
Uniform Electric Field ◽  
Charge Collection ◽  
Applied Bias ◽  
Particle Detectors ◽  
Charge Collection Efficiency ◽  
Lec Gaas

ABSTRACTThe behaviour of the charge collection efficiency of particle detectors fabricated from Semi-Insulating (SI) Liquid Encapsulated Czochralski (LEC) GaAs as a function of applied bias is investigated for alpha particles and it is shown that it cannot be explained by simple models that assume a uniform electric field across the detector. To investigate this the electric field within the SI GaAs has been studied. We have attempted to correlate the measured charge collection efficiency with the observed field distributions. Some correlation is found but other effects may also be present.

3D imaging of radiation damage in silicon sensor and spatial mapping of charge collection efficiency

2013 ◽  
Vol 8 (03) ◽  
pp. C03023-C03023 ◽  
Author(s):  
M Jakubek ◽  
J Jakubek ◽  
J Zemlicka ◽  
M Platkevic ◽  
V Havranek ◽  
...  
Keyword(s):  
Radiation Damage ◽  
3D Imaging ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Spatial Mapping ◽  
Charge Collection Efficiency ◽  
Silicon Sensor
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