Semi-Insulating InP Particle Detectors For X- And γ-Ray Detection

1997 ◽  
Vol 487 ◽  
Author(s):  
P. G. Pelfer ◽  
F. Dubecký ◽  
R. Fomari ◽  
M. Pikna ◽  
M. Krempaský ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Energy Resolution ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Back Contact ◽  
X Rays ◽  
Particle Detectors ◽  
Charge Collection Efficiency ◽  
Γ Ray ◽  
Α Particles

AbstractA study of electrical properties and detection performances of the semi-insulating (SI) InP based detectors is presented. Detectors with a top P+ layer and a Schottky back contact give the charge collection efficiency about 90 % and an energy resolution 3.7% (FWHM) for 5.48MeV α-particles at 250 K. Detection of X-rays (122 keV and 60 keV) photons in temperature region 220–250 K is demonstrated. Multiple peaking observed during detection of photons is discussed.

Effect of Heat Treatment on Electrical Properties and Charge Collection Efficiency of X-Ray Sensors Based on Chrome-Compensated Gallium Arsenide

2016 ◽  
Vol 59 (2) ◽  
pp. 295-300
Author(s):  
A. N. Zarubin ◽  
I. I. Kolesnikova ◽  
A. D. Lozinskaya ◽  
V. A. Novikov ◽  
M. S. Skakunov ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Gallium Arsenide ◽  
Electrical Properties ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
X Ray

Studies of Charge Collection in GaAs Radiation Detectors

1993 ◽  
Vol 302 ◽  
Author(s):  
K Berwick ◽  
M R Brozel ◽  
C M Butiar ◽  
M Cowperthwaite ◽  
Y Hou
Keyword(s):  
Electric Field ◽  
Collection Efficiency ◽  
Radiation Detectors ◽  
Alpha Particles ◽  
Uniform Electric Field ◽  
Charge Collection ◽  
Applied Bias ◽  
Particle Detectors ◽  
Charge Collection Efficiency ◽  
Lec Gaas

ABSTRACTThe behaviour of the charge collection efficiency of particle detectors fabricated from Semi-Insulating (SI) Liquid Encapsulated Czochralski (LEC) GaAs as a function of applied bias is investigated for alpha particles and it is shown that it cannot be explained by simple models that assume a uniform electric field across the detector. To investigate this the electric field within the SI GaAs has been studied. We have attempted to correlate the measured charge collection efficiency with the observed field distributions. Some correlation is found but other effects may also be present.

Experimental Results from γ-irradiated GaAs Crystals Grown with Different Techniques

1993 ◽  
Vol 302 ◽  
Author(s):  
W. Bencivelli ◽  
E. Bertolucci ◽  
U. Bottigli ◽  
A. Cavallini ◽  
S. D'Auria ◽  
...  
Keyword(s):  
Gallium Arsenide ◽  
Room Temperature ◽  
Detection Efficiency ◽  
Collection Efficiency ◽  
Experimental Results ◽  
Simulation Program ◽  
Charge Collection ◽  
X Rays ◽  
Charge Collection Efficiency ◽  
Digital Radiology

ABSTRACTGallium Arsenide crystals are among the most efficient detectors of X-rays at room temperature. Different GaAs crystals have been irradiated with photons from radioactive sources, to compare their response in view of a possible application for Digital Radiology. The detectors have been obtained by various manufacturers and with different techniques (LEC and LPE crystals). Experimental results include I-V curves, charge collection efficiency and detection efficiency as a function of bias. A comparison is made with a simulation program.

The Influence of the Extreme Fluences of 8 MeV Protons on Characteristics of SiC Nuclear Detectors Produced by Al Implantation

2007 ◽  
Vol 556-557 ◽  
pp. 961-964 ◽  
Author(s):  
Alexander M. Ivanov ◽  
Nikita B. Strokan ◽  
Alexander A. Lebedev ◽  
Vitalii V. Kozlovski
Keyword(s):  
Experimental Data ◽  
Collection Efficiency ◽  
Charge Collection ◽  
Carrier Localization ◽  
Charge Collection Efficiency ◽  
Radiation Induced ◽  
Nuclear Detectors ◽  
Two Parameter ◽  
Mev Protons ◽  
Α Particles

The charge collection efficiency (ССЕ) of SiC-detectors preliminarily irradiated with 8 MeV protons at a fluence of 1014 cm-2 has been studied. Nuclear spectrometric techniques with 5.4 MeV α-particles were employed to test the detectors. The concentration of primarily created defects was estimated to be 4×1016 cm-3. A strong compensation of SiC was observed, which allowed connection of the structure in the forward mode. The experimental data obtained were processed using a simple two-parameter model of signal formation. The model makes it possible to separate the contributions of electrons and holes to the ССЕ. An additional irradiation at a fluence of 2×1014 cm-2 reduced the ССЕ value by a factor of 2 and gave rise to polarization. The latter indicates that radiation-induced centers are not only actively involved in carrier localization (with a decrease in the lifetime), but also in transformation of the electric field within the detector.

Matrix Nuclear Radiation GaAs Detectors Simulation

2016 ◽  
Vol 845 ◽  
pp. 154-157
Author(s):  
Eketerina Tokareva ◽  
Gennadiy Koltsov ◽  
Nurnaz Burtebaev ◽  
Sergey Didenko ◽  
Sergey Legotin ◽  
...  
Keyword(s):  
Electric Fields ◽  
Energy Resolution ◽  
Collection Efficiency ◽  
Structure Optimization ◽  
Computer Programs ◽  
Nuclear Radiation ◽  
Charge Collection ◽  
Charge Collection Efficiency ◽  
Detector Structure ◽  
Matrix Detector

Using computer programs Elmer FEM Solver for calculating electric fields and Geant4 for the passage simulation of particles through matter, calculations of charge collection efficiency for nuclear radiation matrix detector based on GaAs p-i-n diodes with different distances between pixels 110 microns and 50 microns were made. Based on data obtained detector structure optimization solution, which improves energy resolution, is proposed.

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