Properties of thin MgO films grown on single-crystalline CVD diamond

2001 ◽  
Vol 175-176 ◽  
pp. 517-524 ◽  
Author(s):  
S.M Lee ◽  
H Murakami ◽  
T Ito
2004 ◽  
Vol 13 (4-8) ◽  
pp. 858-862 ◽  
Author(s):  
Tokuyuki Teraji ◽  
Satoshi Yoshizaki ◽  
Hideki Wada ◽  
Mitsuhiro Hamada ◽  
Toshimichi Ito

2007 ◽  
Vol 19 (11) ◽  
pp. 2852-2859 ◽  
Author(s):  
Nianjun Yang ◽  
Hiroshi Uetsuka ◽  
Hideyuki Watanabe ◽  
Takako Nakamura ◽  
Christoph E. Nebel

2010 ◽  
Vol 19 (2-3) ◽  
pp. 208-212 ◽  
Author(s):  
Hitoshi Umezawa ◽  
Yoshiaki Mokuno ◽  
Hideaki Yamada ◽  
Akiyoshi Chayahara ◽  
Shin-ichi Shikata

2006 ◽  
Vol 956 ◽  
Author(s):  
Andrey Bogdan ◽  
Ganna Bogdan ◽  
Ward De Ceuninck ◽  
Ken Haenen ◽  
Milos Nesladek

ABSTRACTTransient photocurrent measurements in the Time-of-Flight (TOF) configuration were used to study the electrical transport in single crystalline diamond layers using a Nd:YAG - pumped OPO (2.7 nsec) laser pulse excitation source working at a wavelength of ∼ 218 nm. The amount of collected charge was measured and the hole and electron drift mobilities were determined at room temperature for natural IIa diamond and intrinsic single crystalline CVD diamond samples. A variation of the laser intensity over several orders of magnitude enabled switching between the so called “small signal TOF” and “space charge limited current” (SCLC) modes. Experiments were done using electrical fields in the range of 0.05-1.2 V/μm.


2015 ◽  
Vol 1734 ◽  
Author(s):  
A.L. Vikharev ◽  
A.B. Muchnikov ◽  
D.B. Radishev ◽  
V.A. Isaev ◽  
O.A. Ivanov ◽  
...  

ABSTRACTThe study of combined single-crystalline and polycrystalline chemical vapor deposited (CVD) diamond wafers is reported. Combined CVD diamond wafers up to 75 mm in diameter were grown, which consist of great number of single-crystalline diamond sections grafted in a polycrystalline diamond matrix. The grown combined CVD wafers were characterized by the Raman spectroscopy. It was shown that in the grafting process, the single- and polycrystalline areas of the combined wafer undergo insignificant stresses, which can be released during the thermal annealing process. Fabricated combined CVD diamond can be used in various applications that employ unique properties of diamond and potentially suitable for industrial use.


2008 ◽  
Vol 17 (4-5) ◽  
pp. 892-895 ◽  
Author(s):  
Nianjun Yang ◽  
Hiroshi Uetsuka ◽  
Hideyuki Watanabe ◽  
Takako Nakamura ◽  
Christoph E. Nebel

1999 ◽  
Vol 8 (2-5) ◽  
pp. 754-758 ◽  
Author(s):  
M Nishimura ◽  
K Ogawa ◽  
A Hatta ◽  
T Ito

Sign in / Sign up

Export Citation Format

Share Document