Growth and characterization of combined single-crystalline and polycrystalline CVD diamond wafer

2015 ◽  
Vol 1734 ◽  
Author(s):  
A.L. Vikharev ◽  
A.B. Muchnikov ◽  
D.B. Radishev ◽  
V.A. Isaev ◽  
O.A. Ivanov ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Chemical Vapor ◽  
Polycrystalline Diamond ◽  
Cvd Diamond ◽  
Annealing Process ◽  
Single Crystalline ◽  
Chemical Vapor Deposited ◽  
Thermal Annealing Process ◽  
Industrial Use

ABSTRACTThe study of combined single-crystalline and polycrystalline chemical vapor deposited (CVD) diamond wafers is reported. Combined CVD diamond wafers up to 75 mm in diameter were grown, which consist of great number of single-crystalline diamond sections grafted in a polycrystalline diamond matrix. The grown combined CVD wafers were characterized by the Raman spectroscopy. It was shown that in the grafting process, the single- and polycrystalline areas of the combined wafer undergo insignificant stresses, which can be released during the thermal annealing process. Fabricated combined CVD diamond can be used in various applications that employ unique properties of diamond and potentially suitable for industrial use.

Crystalline perfection of chemical vapor deposited diamond films

1990 ◽  
Vol 5 (8) ◽  
pp. 1591-1594 ◽  
Author(s):  
A. V. Hetherington ◽  
C. J. H. Wort ◽  
P. Southworth
Keyword(s):  
Grain Boundaries ◽  
Microwave Plasma ◽  
Diamond Films ◽  
Stacking Faults ◽  
Chemical Vapor ◽  
Cvd Diamond ◽  
Growth Conditions ◽  
Crystalline Perfection ◽  
Planar Defects ◽  
Chemical Vapor Deposited

The crystalline perfection of microwave plasma assisted chemical vapor deposited (MPACVD) diamond films grown under various conditions has been examined by TEM. Most CVD diamond films thus far reported contain a high density of defects, predominantly twins and stacking faults on {111} planes. We show that under appropriate growth conditions, these planar defects are eliminated from the center of the crystallites, and occur only at grain boundaries where the growing crystallites meet.

Characterization of Low Temperature Chemical Vapor Deposited Gd2O3 Doped CeO2 Films

2011 ◽  
Vol 485 ◽  
pp. 133-136 ◽  
Author(s):  
Ryoichi Saotome ◽  
Naoki Wakiya ◽  
Takanori Kiguchi ◽  
Jeffrey S. Cross ◽  
Osamu Sakurai ◽  
...  
Keyword(s):  
Activation Energy ◽  
Vapor Deposition ◽  
Electrochemical Impedance ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Partial Pressures ◽  
Chemical Vapor Deposited ◽  
Electrical Conductivities ◽  
Deposited Films

Highly oriented and polycrystalline Gd2O3 doped CeO2 thin films were prepared on α-Al2O3(0001) substrates by chemical vapor deposition, using Ce(C5H4C2H5)3 and Gd(C5H4C2H5)3 as precursors. The compositions of the films were controlled by optimizing the vaporization pressure of Gd precursor under the constant vaporization condition of Ce precursor. In-plane electrical conductivities of the films at various temperatures and oxygen partial pressures were evaluated by electrochemical impedance spectroscopy measurements. The activation energy of the film was determined as 0.94 eV, which is comparable with that of pulsed laser deposited films.

Characterization of reduced pressure chemical vapor deposited Si0.8Ge0.2/Si multi-layers

2013 ◽  
Vol 16 (1) ◽  
pp. 126-130 ◽  
Author(s):  
Kyu-Hwan Shim ◽  
Hyeon Deok Yang ◽  
Yeon-Ho Kil ◽  
Jong-Han Yang ◽  
Woong-Ki Hong ◽  
...  
Keyword(s):  
Chemical Vapor ◽  
Reduced Pressure ◽  
Chemical Vapor Deposited ◽  
Pressure Chemical

Omcvd Elaboration and Characterization of Silicon Carbide and Carbon-Silicon Carbide Films from Organosilicon Compounds

1992 ◽  
Vol 271 ◽  
Author(s):  
R. Morancho ◽  
A. Reynes ◽  
M'b. Amjoud ◽  
R. Carles
Keyword(s):  
Thin Films ◽  
Silicon Carbide ◽  
Raman Spectroscopy ◽  
Chemical Vapor Deposition ◽  
Thermal Behavior ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organosilicon Compounds ◽  
Carrier Gas

ABSTRACTTwo organosilicon molecules tetraethysilane (TESi) and tetravinylsilane (TVSi) were used to prepare thin films of silicon carbide by chemical vapor deposition (C. V. D.). In each of the molecule, the ratio C/Si = 8, the only difference between TESi and TVSi is the structure of the radicals ethyl (.CH2-CH3) and vinyl (.CH=CH2). This feature induces different thermal behavior and leads to the formation of different materials depending on the nature of the carrier gas He or H2· The decomposition gases are correlated with the material deposited which is investigated by I.R. and Raman spectroscopy. The structure of the starting molecule influences the mechanisms of decomposition and consequently the structure of the material obtained.

Raman studies of reactive DC-magnetron sputtered thin films of YBaCuO on MgO

1989 ◽  
Vol 4 (6) ◽  
pp. 1312-1319 ◽  
Author(s):  
K. C. Sheng ◽  
S. J. Lee ◽  
Y. H. Shen ◽  
X. K. Wang ◽  
E. D. Rippert ◽  
...  
Keyword(s):  
Thin Films ◽  
Raman Spectroscopy ◽  
Critical Temperature ◽  
Impurity Content ◽  
Superconducting Films ◽  
Annealing Process ◽  
Rapid Thermal Annealing Process ◽  
Zero Resistance ◽  
Thermal Annealing Process

Raman spectroscopy was employed to study Y–Ba–Cu–O films prepared by multilayer, reactive sputtering from separate Y, Cu, and Ba0.5Cu0.5 targets. A set of films having the composition YxBa2CuyOz with 0.7 < x < 1.8 and 2.8 < y < 3.5 and critical temperature with zero resistance, Tc(R = 0), ranging from 25 to 90 K was studied with the Raman technique. The correlation between Raman data and critical temperature, Tc, was investigated. This technique provides important information concerning the film crystallinity, homogencity, and impurity content (including other phases) which is useful in judging the quality of high Tc superconducting films. We also found that the rapid thermal annealing process is a very efficient way to reduce chemical reactions between the film and the substrate.

Fabrication and characterization of microwave-plasma-assisted chemical-vapor-deposited dielectric coatings

1991 ◽  
Author(s):  
Roger M. Wood ◽  
Adrian C. Greenham ◽  
Bruce A. Nichols ◽  
Noorallah Nourshargh ◽  
Keith L. Lewis
Keyword(s):  
Microwave Plasma ◽  
Chemical Vapor ◽  
Dielectric Coatings ◽  
Chemical Vapor Deposited ◽  
Fabrication And Characterization
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