High quality Hastelloy films deposited by XeCl pulsed laser ablation

2003 ◽  
Vol 208-209 ◽  
pp. 669-675 ◽  
Author(s):  
A Zocco ◽  
A Perrone ◽  
M.F Vignolo ◽  
S Duhalde ◽  
I Avram ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality

High quality β-FeSi2 thin films prepared on silicon (100) by using pulsed laser ablation of Fe target

2012 ◽  
Vol 135 (2-3) ◽  
pp. 991-997 ◽  
Author(s):  
S.C. Xu ◽  
C. Yang ◽  
M. Liu ◽  
S.Z. Jiang ◽  
Y.Y. Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality

IMPROVEMENT OF THE SURFACE ROUGHNESS OF LaAlO3 SUBSTRATE BY DEPOSITING ANOTHER LAYER OF LaAlO3

1993 ◽  
Vol 07 (11) ◽  
pp. 743-746
Author(s):  
YONGJUN TIAN ◽  
HUIBIN LU ◽  
SHIFA XU ◽  
DAFU CUI ◽  
ZHENHAO CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Laser Ablation ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality ◽  
Surface Profiles ◽  
Deposited Films

LaAlO 3 thin films have been deposited on (100) LaAlO 3 substrates by pulsed laser ablation. The deposited films showed the (h00) preferential orientations. Surface profiles indicated that the surface roughness of the films decreased with the increase of the oxygen partial pressure. High quality superconducting YBa 2 Cu 3 O 7 thin films have been successfully deposited by laser ablation on the (100) LaAlO 3 substrates with the LaAlO 3 layers.

Growth of Epitaxial ZnS Films by Pulsed-Laser Ablation

1992 ◽  
Vol 242 ◽  
Author(s):  
J. W. McCamy ◽  
D. H. Lowndes ◽  
J. D. Budai ◽  
B. C. Chakoumakos ◽  
R. A. Zuhr
Keyword(s):  
Laser Ablation ◽  
Stacking Faults ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Temperature Dependent ◽  
High Quality ◽  
X Ray ◽  
Fault Density ◽  
Highly Uniform ◽  
Zns Films

ABSTRACTPulsed KrF (248nm) laser ablation of a polycrystailine ZnS target has been used to grow high quality, carbon-free, epitaxial ZnS thin films on GaAs(OOl), GaAs(111), and GaP(OOl). The films were grown at temperatures of 150–450°C, using a rotating substrate heater and deposition geometry that produces films with highly uniform thickness. X-ray rocking curves are consistent with (111) stacking faults being the dominant defects in the ZnS films grown on GaAs. The estimated stacking fault density is ∼6 × 1010 cm-3, comparable to the best MOCVD ZnS films. RBS analysis shows that these defects are located predominantly near the GaAs-ZnS interface. The anisotropy of the ZnS growth rate, between the GaAs(001) and GaAs(111) surfaces, was found to be temperature-dependent.

Deposition of high quality YBa2Cu3O7−δthin films over large areas by pulsed laser ablation with substrate scanning

1991 ◽  
Vol 69 (10) ◽  
pp. 7182-7188 ◽  
Author(s):  
M. F. Davis ◽  
J. Wosik ◽  
K. Forster ◽  
S. C. Deshmukh ◽  
H. R. Rampersad ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality

Preparation of high-quality Bi2Sr2CaCu2O8+δ thin films by pulsed laser ablation and post-annealing

2002 ◽  
Vol 372-376 ◽  
pp. 600-603 ◽  
Author(s):  
Akira Ishii ◽  
Yoshihiko Takano ◽  
Shunichi Arisawa ◽  
Takeshi Hatano ◽  
Kazumasa Togano
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality ◽  
Post Annealing

High quality zinc oxide films by pulsed laser ablation

1997 ◽  
Vol 295 (1-2) ◽  
pp. 104-106 ◽  
Author(s):  
K.L. Narasimhan ◽  
S.P. Pai ◽  
V.R. Palkar ◽  
R. Pinto
Keyword(s):  
Zinc Oxide ◽  
Laser Ablation ◽  
Oxide Films ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality ◽  
Zinc Oxide Films

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

Sign in / Sign up

Export Citation Format

Share Document