IMPROVEMENT OF THE SURFACE ROUGHNESS OF LaAlO3 SUBSTRATE BY DEPOSITING ANOTHER LAYER OF LaAlO3

1993 ◽  
Vol 07 (11) ◽  
pp. 743-746
Author(s):  
YONGJUN TIAN ◽  
HUIBIN LU ◽  
SHIFA XU ◽  
DAFU CUI ◽  
ZHENHAO CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Laser Ablation ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality ◽  
Surface Profiles ◽  
Deposited Films

LaAlO 3 thin films have been deposited on (100) LaAlO 3 substrates by pulsed laser ablation. The deposited films showed the (h00) preferential orientations. Surface profiles indicated that the surface roughness of the films decreased with the increase of the oxygen partial pressure. High quality superconducting YBa 2 Cu 3 O 7 thin films have been successfully deposited by laser ablation on the (100) LaAlO 3 substrates with the LaAlO 3 layers.

High quality β-FeSi2 thin films prepared on silicon (100) by using pulsed laser ablation of Fe target

2012 ◽  
Vol 135 (2-3) ◽  
pp. 991-997 ◽  
Author(s):  
S.C. Xu ◽  
C. Yang ◽  
M. Liu ◽  
S.Z. Jiang ◽  
Y.Y. Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality

DEPOSITION OF (Ba, La)CuO2/CaCuO2 SUPERCONDUCTING MULTILAYERS BY PULSED LASER ABLATION

2000 ◽  
Vol 14 (25n27) ◽  
pp. 2713-2718 ◽  
Author(s):  
V. BRACCINI ◽  
D. MARRE' ◽  
A. MOLLICA ◽  
G. GRASSANO ◽  
A. S. SIRI
Keyword(s):  
Laser Ablation ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Laser Deposition ◽  
High Oxygen Partial Pressure ◽  
Infinite Layer ◽  
Deposition Parameters ◽  
Semiconducting Behavior

Superconducting multilayers, whose growth and structure are determined by the kinetic deposition instead by thermodynamics, are a powerful tool for investigating high T c superconductors (HTSC) properties. By means of Pulsed Laser Deposition (PLD), we grew such materials alternating infinite layer phases both pure and doped, to supply CuO 2 planes and charge reservoir (CR) blocks respectively. We found out that using chemically doped CR leads to a semiconducting behavior, whereas oxygen doping seems to be much more effective, since the BaCuO 2 infinite phase, grown in high oxygen partial pressure, does actually bring about a superconducting behavior. We deposited BaCuO 2/ CaCuO 2 superlattices with various periodicities and studied their transport and structural properties. By varying the deposition parameters, we reached both kinetic and thermodynamic growth and we observed semiconducting and superconducting behaviors.

Preparation of high-quality Bi2Sr2CaCu2O8+δ thin films by pulsed laser ablation and post-annealing

2002 ◽  
Vol 372-376 ◽  
pp. 600-603 ◽  
Author(s):  
Akira Ishii ◽  
Yoshihiko Takano ◽  
Shunichi Arisawa ◽  
Takeshi Hatano ◽  
Kazumasa Togano
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality ◽  
Post Annealing

Evaluation of Planar-Type Thin Film ZnO Varistors Fabricated Using Pulsed Laser Ablation

2006 ◽  
Vol 320 ◽  
pp. 109-112
Author(s):  
Sayuki Sawa ◽  
Shinzo Yoshikado
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Alumina Substrate ◽  
Laser Ablation Method ◽  
Zno Varistors ◽  
532 Nm ◽  
Deposited Films

Planar-type thin film Bi-Mn-Co-doped ZnO varistors were fabricated on a silica glass substrate or a sintered alumina substrate using a visible light (532 nm) pulsed laser ablation method. The deposited thin films were annealed at 800°C or 900°C in air. For the thin films deposited on alumina substrates and then annealed, the contents of Bi and Mn decreased compared with those of the as-deposited films. Voltage-current (V-I) characteristics of the thin-film varistor fabricated on the alumina substrates and annealed showed nonlinearity. The nonlinearity index α was approximately 10 for the thin film deposited on the alumina substrate and annealed at 800°C in air using a target of ZnO doped with 2.5 mol% Bi2O3, 0.5 mol% MnO2 and 0.2 mol% Co3O4. Moreover, the current density of 20 A/cm3 was relatively high for safety use.

Observations on the growth of YBa2Cu3O7-δ thin films on MgO by pulsed-laser ablation

1991 ◽  
Vol 49 ◽  
pp. 1068-1069
Author(s):  
M. Grant Norton ◽  
C. Barry Carter
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Laser Ablation ◽  
Substrate Surface ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Thin Film Deposition ◽  
Film Deposition ◽  
Laser Ablation Process ◽  
Deposition Parameters

Pulsed-laser ablation has been widely used to produce high-quality thin films of YBa2Cu3O7-δ on a range of substrate materials. The nonequilibrium nature of the process allows congruent deposition of oxides with complex stoichiometrics. In the high power density regime produced by the UV excimer lasers the ablated species includes a mixture of neutral atoms, molecules and ions. All these species play an important role in thin-film deposition. However, changes in the deposition parameters have been shown to affect the microstructure of thin YBa2Cu3O7-δ films. The formation of metastable configurations is possible because at the low substrate temperatures used, only shortrange rearrangement on the substrate surface can occur. The parameters associated directly with the laser ablation process, those determining the nature of the process, e g. thermal or nonthermal volatilization, have been classified as ‘primary parameters'. Other parameters may also affect the microstructure of the thin film. In this paper, the effects of these ‘secondary parameters' on the microstructure of YBa2Cu3O7-δ films will be discussed. Examples of 'secondary parameters' include the substrate temperature and the oxygen partial pressure during deposition.

ZnS thin films grown on Si(100) by XeCl pulsed laser ablation

2001 ◽  
Vol 177 (1-2) ◽  
pp. 73-77 ◽  
Author(s):  
K.T Hillie ◽  
C Curren ◽  
H.C Swart
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation

High quality Hastelloy films deposited by XeCl pulsed laser ablation

2003 ◽  
Vol 208-209 ◽  
pp. 669-675 ◽  
Author(s):  
A Zocco ◽  
A Perrone ◽  
M.F Vignolo ◽  
S Duhalde ◽  
I Avram ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality
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