Growth of Epitaxial ZnS Films by Pulsed-Laser Ablation

1992 ◽  
Vol 242 ◽  
Author(s):  
J. W. McCamy ◽  
D. H. Lowndes ◽  
J. D. Budai ◽  
B. C. Chakoumakos ◽  
R. A. Zuhr
Keyword(s):  
Laser Ablation ◽  
Stacking Faults ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Temperature Dependent ◽  
High Quality ◽  
X Ray ◽  
Fault Density ◽  
Highly Uniform ◽  
Zns Films

ABSTRACTPulsed KrF (248nm) laser ablation of a polycrystailine ZnS target has been used to grow high quality, carbon-free, epitaxial ZnS thin films on GaAs(OOl), GaAs(111), and GaP(OOl). The films were grown at temperatures of 150–450°C, using a rotating substrate heater and deposition geometry that produces films with highly uniform thickness. X-ray rocking curves are consistent with (111) stacking faults being the dominant defects in the ZnS films grown on GaAs. The estimated stacking fault density is ∼6 × 1010 cm-3, comparable to the best MOCVD ZnS films. RBS analysis shows that these defects are located predominantly near the GaAs-ZnS interface. The anisotropy of the ZnS growth rate, between the GaAs(001) and GaAs(111) surfaces, was found to be temperature-dependent.

High quality Hastelloy films deposited by XeCl pulsed laser ablation

2003 ◽  
Vol 208-209 ◽  
pp. 669-675 ◽  
Author(s):  
A Zocco ◽  
A Perrone ◽  
M.F Vignolo ◽  
S Duhalde ◽  
I Avram ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality

X-ray spectroscopic and stroboscopic analysis of pulsed-laser ablation of Zn and its oxidation

2017 ◽  
Vol 124 (1) ◽  
Author(s):  
Stefan Reich ◽  
Jörg Göttlicher ◽  
Alexander Letzel ◽  
Bilal Gökce ◽  
Stephan Barcikowski ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
X Ray

Modeling for Chemical-Etching Enhanced Pulsed Laser Ablation

2019 ◽  
Author(s):  
Xing Zhang ◽  
Bo Mao ◽  
Rebecca Histed ◽  
Yiliang Liao
Keyword(s):  
Laser Ablation ◽  
Chemical Etching ◽  
Pulsed Laser ◽  
Target Material ◽  
Pulsed Laser Ablation ◽  
Ablation Rate ◽  
Temperature Dependent ◽  
Laser Shock Processing ◽  
Active Liquid ◽  
Shock Processing

Abstract Pulsed laser ablation (PLA) under active liquid confinement, also known as chemical etching enhanced pulsed laser ablation (CE-PLA), has emerged as a novel laser processing methodology, which breaks the current major limitation in underwater PLA caused by the breakdown plasma and effectively improves the efficiencies of underwater PLA-based processes, such as laser-assisted nano-/micro-machining and laser shock processing. Despite of experimental efforts, little attention has been paid on CE-PLA process modeling. In this study, an extended two-temperature model is proposed to predict the temporal/spatial evolution of the electron-lattice temperature and the ablation rate in the CE-PLA process. The model is developed with considerations on the temperature-dependent electronic thermal properties and optical properties of the target material. The ablation rate is formulated by incorporating the mutual promotion between ablation and etching processes. The simulation results are validated by the experimental data of CE-PLA of zinc under the liquid confinement of hydrogen peroxide.

High quality β-FeSi2 thin films prepared on silicon (100) by using pulsed laser ablation of Fe target

2012 ◽  
Vol 135 (2-3) ◽  
pp. 991-997 ◽  
Author(s):  
S.C. Xu ◽  
C. Yang ◽  
M. Liu ◽  
S.Z. Jiang ◽  
Y.Y. Ma ◽  
...  
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality

IMPROVEMENT OF THE SURFACE ROUGHNESS OF LaAlO3 SUBSTRATE BY DEPOSITING ANOTHER LAYER OF LaAlO3

1993 ◽  
Vol 07 (11) ◽  
pp. 743-746
Author(s):  
YONGJUN TIAN ◽  
HUIBIN LU ◽  
SHIFA XU ◽  
DAFU CUI ◽  
ZHENHAO CHEN ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Roughness ◽  
Laser Ablation ◽  
Oxygen Partial Pressure ◽  
Partial Pressure ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
High Quality ◽  
Surface Profiles ◽  
Deposited Films

LaAlO 3 thin films have been deposited on (100) LaAlO 3 substrates by pulsed laser ablation. The deposited films showed the (h00) preferential orientations. Surface profiles indicated that the surface roughness of the films decreased with the increase of the oxygen partial pressure. High quality superconducting YBa 2 Cu 3 O 7 thin films have been successfully deposited by laser ablation on the (100) LaAlO 3 substrates with the LaAlO 3 layers.

Microstructure and Thermoelectric Properties of p-Type Bi0.5Sb1.5Te3 and n-Type Bi2Te2.7Se0.3 Films Deposited by Pulsed Laser Ablation

2001 ◽  
Vol 691 ◽  
Author(s):  
Raghuveer S. Makala ◽  
K. Jagannadham ◽  
B.C. Sales ◽  
Hsin Wang
Keyword(s):  
Laser Ablation ◽  
Thermoelectric Properties ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Uniform Thickness ◽  
X Ray Diffraction ◽  
High Crystalline Quality ◽  
X Ray ◽  
Crystal Perfection ◽  
P Type

ABSTRACTThin films of p-type Bi0.5Sb1.5Te3, n-type Bi2Te2.7Se0.3 and n-type with SbI3 doping were deposited on mica substrates using Nd-YAG pulsed laser ablation at temperatures ranging from 300°C to 500°C. These films were characterized using X-ray diffraction, SEM and TEM. X-ray mapping and EDS were used to determine the composition. The films showed uniform thickness and high crystalline quality with a preferred (00n) alignment with the substrates. The film quality in terms of composition and crystal perfection is studied as a function of growth temperature. It was found that films deposited at 350°C gave improved crystallinity and thermoelectric characteristics. The Seebeck coefficient, electrical resistivity and Hall mobility were measured as a function of temperature and compared with the measurements on the bulk. Correlation of thermoelectric properties with microstructure is discussed.

Characterization of BaTiO3 Thin Films Deposited by Pulsed-Laser Ablation

1990 ◽  
Vol 201 ◽  
Author(s):  
Christopher Scarfone ◽  
M. Grant Norton ◽  
C. Barry Carter ◽  
Jian Li ◽  
James W. Mayer
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Film Surface ◽  
Pulsed Laser Ablation ◽  
X Ray Diffraction ◽  
X Ray ◽  
Ion Channeling ◽  
Very High

AbstractThin films of barium titanate (BaTiOs) have been deposited by pulsed-laser ablation onto (001)-oriented MgO substrates. The films were epitactic as evidenced by both x-ray diffraction and ion-channeling techniques. The film surface appeared smooth and contained a low density of particulates. This latter feature is believed to be due to the formation of target pellets having a very high density.

SYNTHESIS OF ULTRAFINE/NANOSIZE POWDERS OF IRON OXIDES BY PULSED LASER ABLATION AND COLD CONDENSATION

1996 ◽  
Vol 10 (30) ◽  
pp. 1517-1527 ◽  
Author(s):  
S. R. SHINDE ◽  
A. G. BANPURKAR ◽  
K. P. ADHI ◽  
A. V. LIMAYE ◽  
S. B. OGALE ◽  
...  
Keyword(s):  
Laser Ablation ◽  
Pulsed Laser ◽  
Pulsed Laser Ablation ◽  
Vibrating Sample Magnetometry ◽  
X Ray Diffraction ◽  
X Ray ◽  
Excimer Laser Ablation ◽  
Nanosize Particles ◽  
Cold Condensation ◽  
Scanning Electron

Ultrafine/nanosize powders of iron oxide have been synthesized from a sintered α- Fe 2 O 3 target by pulsed excimer laser ablation and cold condensation. The influence of target porosity and temperature of condensation on the formation of nanosize particles has been studied. The nanosize powders have been characterized by X-ray diffraction, Mössbauer spectroscopy, vibrating sample magnetometry and scanning electron microscopy. It is shown that the formation of ultrafine/nanosize particles is strongly governed by the target porosity, whereas, the temperature of condensation, over a range from 27°C to −130°C, does not affect the magnetic properties of the nanoparticles.

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