Magnetostriction of glass-coated Co-rich amorphous microwires and its dependence on current annealing

2003 ◽  
Vol 254-255 ◽  
pp. 94-96 ◽  
Author(s):  
V Zhukova ◽  
J.M Blanco ◽  
A Zhukov ◽  
J Gonzalez ◽  
A Torcunov ◽  
...  
2019 ◽  
Vol 64 (7) ◽  
pp. 990-993
Author(s):  
A. Dzhumazoda ◽  
L. V. Panina ◽  
M. G. Nematov ◽  
N. A. Yudanov ◽  
F. S. Tabarov ◽  
...  

2007 ◽  
Vol 40 (10) ◽  
pp. 3233-3238 ◽  
Author(s):  
K D Sossmeier ◽  
F Bohn ◽  
H Chiriac ◽  
M Carara

2012 ◽  
Vol 174-177 ◽  
pp. 1119-1121 ◽  
Author(s):  
Bin Tian ◽  
Yin Li Xia

The glass-covered Co-rich amorphous wires was annealed by an applied stress during the current annealing process. The influence of stress and dc current annealing on the giant magneto-impedance (GMI) effect were investigated by the magneto-impedance. Our experiments showed that the magentic anisotropy is reduced by the annealing treatments, furthermore, the maximum GMI value is increased to 105 %.The GMI value is enhanced by increasing the outer domain volume and inducing a transverse anisotropy due to the changing of inner stress.


2018 ◽  
Vol 185 ◽  
pp. 04030 ◽  
Author(s):  
Makhsudsho G. Nematov ◽  
Nicolay A. Yudanov ◽  
Rodion A. Yakubtsev ◽  
Larissa V. Panina ◽  
Anna V. Beklemisheva ◽  
...  

Effects of current annealing on magnetic hysteresis properties and magnetoimpedance (MI) of glass-coated amorphous microwires with nominal composition of Co71Fe5B11Si10Cr3 and small positive magnetostriction were investigated with the purpose to control the magnetic anisotropy. We have demonstrated that current annealing can produce a controllable change in the easy anisotropy direction from almost axial to circular, depending on the annealing time. The induced magnetization configuration is very sensitive to the applied tensile stress. The combination of positive magnetostriction and helical anisotropy makes it possible to realise large stress-magnetoimpedance (S-MI) effect without use of any dc bias fields owing to the directional change in magnetization. This is especially important for microwave frequency S-MI effect and can be very interesting for developing stress-sensors operating at the high frequency region.


2015 ◽  
Vol 651 ◽  
pp. 718-723 ◽  
Author(s):  
A. Zhukov ◽  
M. Churyukanova ◽  
S. Kaloshkin ◽  
V. Semenkova ◽  
S. Gudoshnikov ◽  
...  

2018 ◽  
Vol 459 ◽  
pp. 147-153 ◽  
Author(s):  
L.V. Panina ◽  
A. Dzhumazoda ◽  
S.A. Evstigneeva ◽  
A.M. Adam ◽  
A.T. Morchenko ◽  
...  

2003 ◽  
Vol 258-259 ◽  
pp. 177-182 ◽  
Author(s):  
J González ◽  
A Chizhik ◽  
A Zhukov ◽  
J.M Blanco

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