Deep etched InGaAs/InP quantum dots with strong lateral confinement effects

1994 ◽  
Vol 16 (3) ◽  
pp. 261-264 ◽  
Author(s):  
O. Schilling ◽  
A. Forchel ◽  
M. Lebedev
2016 ◽  
Vol 138 (40) ◽  
pp. 13253-13259 ◽  
Author(s):  
Ho Jin ◽  
Minji Ahn ◽  
Sohee Jeong ◽  
Jae Hyo Han ◽  
Dongwon Yoo ◽  
...  

2005 ◽  
Vol 87 (23) ◽  
pp. 233111 ◽  
Author(s):  
C. Cornet ◽  
C. Levallois ◽  
P. Caroff ◽  
H. Folliot ◽  
C. Labbé ◽  
...  

2021 ◽  
Vol 129 (5) ◽  
pp. 054301
Author(s):  
M. Hrytsaienko ◽  
M. Gallart ◽  
M. Ziegler ◽  
O. Crégut ◽  
S. Tamariz ◽  
...  

Author(s):  
Cong Shen ◽  
Yan Qing Zhu ◽  
Zixiao Li ◽  
Jingling Li ◽  
Hong Tao ◽  
...  

InP quantum dots (QDs) are considered as the most promising alternative to Cd-based QDs with the lower toxicity and emission spectrum tunability ranging from visible to near-infrared region. Although high-quality...


ACS Nano ◽  
2009 ◽  
Vol 3 (3) ◽  
pp. 502-510 ◽  
Author(s):  
Ken-Tye Yong ◽  
Hong Ding ◽  
Indrajit Roy ◽  
Wing-Cheung Law ◽  
Earl J. Bergey ◽  
...  

2007 ◽  
Vol 06 (03n04) ◽  
pp. 215-219
Author(s):  
E. P. DOMASHEVSKAYA ◽  
V. A. TEREKHOV ◽  
V. M. KASHKAROV ◽  
S. YU. TURISHCHEV ◽  
S. L. MOLODTSOV ◽  
...  

Ultrasoft X-ray emission spectra (USXES) and X-ray absorption near-edge structure (XANES) spectra with the use of synchrotron radiation in the range of P L2,3-edges were obtained for the first time for nanostructures with InP quantum dots grown on GaAs 〈100〉 substrates by vapor-phase epitaxy from metal–organic compounds. These spectra represent local partial density of states in the valence and conduction bands. The additional XANES peak is detected; its intensity depends on the number of monolayers forming quantum dots. Assumptions are made on the band-to-band origin of luminescence spectra in the studied nanostructures.


2013 ◽  
Vol 56 ◽  
pp. 86-91 ◽  
Author(s):  
Waleed E. Mahmoud ◽  
Y.C. Chang ◽  
A.A. Al-Ghamdi ◽  
F. Al-Marzouki ◽  
Lyudmila M. Bronstein

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