C–V and G–V characterization of defects in ultrathin SiO2 thermally grown on RF plasma-hydrogenated silicon
2001 ◽
Vol 308-310
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pp. 485-488
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2008 ◽
Vol 26
(2)
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pp. 198-204
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2002 ◽
Vol 37
(2-3)
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pp. 219-224
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2009 ◽
Vol 35
(8)
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pp. 3067-3072
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Keyword(s):
2010 ◽
Vol 7
(12)
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pp. 992-1000
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