The Ballistic Electron Emission Microscopy in the Characterization of Quantum Dots

2007 ◽  
Vol 121-123 ◽  
pp. 529-532
Author(s):  
S.D. Hutagalung ◽  
K.A. Yaacob ◽  
Y.C. Keat
Keyword(s):  
Quantum Dots ◽  
Electron Emission ◽  
Sio2 Layer ◽  
Scanning Tunneling ◽  
Conductive Layer ◽  
Ballistic Electron Emission Microscopy ◽  
Ballistic Electron ◽  
Electron Transport Properties ◽  
Emission Microscopy ◽  
P Type

Ballistic electron emission microscopy (BEEM) is a new method by apply the spatial resolution capabilities of the scanning tunneling microscope (STM) to investigate electron transport properties in the quantum dots. This method requires three terminals: a sharp tip to inject electrons, a conductive layer and a semiconductor substrate. The transport-related properties of the sample can be obtained by using the characteristic of the injected and collected electrons. In this paper proposed a BEEM model for the silicon quantum dots (Si-QDs) on SiO2 layer prepared by LPCVD technique. SiO2 layer was thermally grown on p-type Si (100) wafer in dry O2 atmosphere and a thin gold layer cap used to provide a conductive layer on top of the Si-QDs for the BEEM characterization.

Study of InAs quantum dots in AlGaAs∕GaAs heterostructure by ballistic electron emission microscopy/spectroscopy

2007 ◽  
Vol 91 (4) ◽  
pp. 042110 ◽  
Author(s):  
J. Walachová ◽  
J. Zelinka ◽  
V. Malina ◽  
J. Vaniš ◽  
F. Šroubek ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electron Emission ◽  
Ballistic Electron Emission Microscopy ◽  
Inas Quantum Dots ◽  
Ballistic Electron ◽  
Emission Microscopy

Ballistic-Electron-Emission Microscopy (BEEM) Studies of Gainp/GaAs Heterostructures

1995 ◽  
Vol 417 ◽  
Author(s):  
J. J. O'Shea ◽  
C. M. Reaves ◽  
M. A. Chin ◽  
S. P. Denbaars ◽  
A. C. Gossard ◽  
...  
Keyword(s):  
Electron Emission ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Ballistic Electron Emission Microscopy ◽  
Ballistic Electron ◽  
Metal Organic ◽  
Emission Microscopy ◽  
Valence Bands ◽  
P Type ◽  
Organic Chemical Vapor Deposition

AbstractBallistic-electron-emission microscopy (BEEM) has been used to study band-offsets in n-and p-type GaInP/GaAs heterostructures. We determine room temperature offsets of 30 meV and 350 meV in the conduction and valence bands, respectively, for thin GaInP layers grown by metal-organic chemical vapor deposition (MOCVD) at 610°C. Low temperature (77 K) measurements also indicate at least 90% of the band discontinuity lies in the valence band for these ordered GaInP samples.

Ballistic Electron Emission Microscopy

1990 ◽  
Vol 48 (1) ◽  
pp. 613-614
Author(s):  
M.H. Hecht ◽  
L.D. Bell ◽  
W.J. Kaiser
Keyword(s):  
Electron Emission ◽  
High Vacuum ◽  
Ultra High Vacuum ◽  
Semiconductor Diode ◽  
Scanning Tunneling ◽  
Ballistic Electron Emission Microscopy ◽  
Tunneling Microscopy ◽  
Plan View ◽  
Ballistic Electron ◽  
Emission Microscopy

Ballistic Electron Emission Microscopy (BEEM) is a scanning-tunneling-microscopy-based technique which gives a plan view, nanometer scale image of electronic properties of a buried interface. Among the properties which can be imaged are barrier height, the edges of multiple conduction and valence bands, and carrier scattering. These properties can be correlated with strain, defects, and stoichiometry variations at the interface. A topographic image of the sample surface is aquired simultaneously with the interface image. BEEM data has been reported from six laboratories to date, including images of Au/Si, Au/GaAs, NiSi2/Si, and Au/CdTe. Several new systems, some designed for ultra-high-vacuum operation, are under construction.In the simplest implementation, electrons or holes are injected from a tunnel tip into the metal electrode of a metal-semiconductor diode (figure 1). The carriers are ballistically transported across the electrode and, if momentum, energy, and scattering criteria are satisfied, are collected in the semiconductor base. Momentum conservation requires the ballistic electron or hole beam to cross the interface within a small cone of solid angle, and hence the collected current only reflects injection into a small region of the Brillouin zone. This small critical angle cone is responsible for the high spatial resolution of BEEM. By varying the potential of the initial injected beam (i.e. tip voltage with respect to electrode), the electronic dispersion relation of the substrate can be spectroscopically probed.

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