Plasma-assisted MBE growth of group-III nitrides: from basics to device applications

2002 ◽  
Vol 93 (1-3) ◽  
pp. 189-196 ◽  
Author(s):  
M.A Sánchez-Garcı́a ◽  
J.L Pau ◽  
F Naranjo ◽  
A Jiménez ◽  
S Fernández ◽  
...  
Keyword(s):  
Group Iii Nitrides ◽  
Mbe Growth ◽  
Group Iii ◽  
Device Applications

On Surface Cracking of Ammonia for MBE Growth of GaN

1996 ◽  
Vol 449 ◽  
Author(s):  
M. Kamp ◽  
M. Mayer ◽  
A. Pelzmann ◽  
K. J. Ebeling
Keyword(s):  
Material Properties ◽  
Group Iii Nitrides ◽  
Growth Mechanisms ◽  
Mbe Growth ◽  
Group Iii ◽  
Surface Cracking ◽  
Homoepitaxial Growth ◽  
N Doping

ABSTRACTWith the use of ammonia as nitrogen precursor for Group III-Nitrides in an on surface cracking (OSC) approach, MBE becomes a serious competitor to MOVPE. Homoepitaxial GaN exhibits record linewidths of 0.5 meV in PL (4K), whereas GaN grown on c-plane sapphire also reveals reasonable material properties (PL linewidth ≈ 5 meV, n ≈ 1017 cm-3 , μ 220 cm2/Vs). Beside results on hetero- and homoepitaxial growth of GaN, insights into the growth mechanisms are presented. The growth of ternary nitrides is discussed, p- and n-doping as well as first LED results are reported.

In situ measurement of adsorbed nitrogen atoms for PA-MBE growth of group III nitrides on Si

2011 ◽  
Vol 8 (5) ◽  
pp. 1491-1494
Author(s):  
Tadashi Ohachi ◽  
Nobuhiko Yamabe ◽  
Yuka Yamamoto ◽  
Motoi Wada ◽  
Osamu Ariyada
Keyword(s):  
Group Iii Nitrides ◽  
In Situ Measurement ◽  
Mbe Growth ◽  
Group Iii ◽  
Adsorbed Nitrogen

Heteroepitaxy of Group III Nitrides for Device Applications

1998 ◽  
Vol 264-268 ◽  
pp. 1115-1120 ◽  
Author(s):  
Hiroshi Amano ◽  
T. Takeuchi ◽  
Hiroshi Sakai ◽  
S. Yamaguchi ◽  
C. Wetzel ◽  
...  
Keyword(s):  
Group Iii Nitrides ◽  
Group Iii ◽  
Device Applications

Control of active nitrogen species used for PA-MBE growth of group III nitrides on Si

2011 ◽  
Vol 318 (1) ◽  
pp. 468-473 ◽  
Author(s):  
Tadashi Ohachi ◽  
Nobuhiko Yamabe ◽  
Yuka Yamamoto ◽  
Motoi Wada ◽  
Osamu Ariyada
Keyword(s):  
Group Iii Nitrides ◽  
Nitrogen Species ◽  
Active Nitrogen ◽  
Mbe Growth ◽  
Group Iii

Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy

1997 ◽  
Vol 26 (11) ◽  
pp. 1266-1269 ◽  
Author(s):  
J. D. Mackenzie ◽  
L. Abbaschian ◽  
C. R. Abernathy ◽  
S. M. Donovan ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Plasma Characteristics

Low-density nanoporous phases of group-III nitrides built from sodalite cage clusters

2013 ◽  
Vol 15 (21) ◽  
pp. 8186 ◽  
Author(s):  
Zhifeng Liu ◽  
Xinqiang Wang ◽  
Gaobin Liu ◽  
Ping Zhou ◽  
Jian Sui ◽  
...  
Keyword(s):  
Group Iii Nitrides ◽  
Low Density ◽  
Group Iii
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