On Surface Cracking of Ammonia for MBE Growth of GaN

1996 ◽  
Vol 449 ◽  
Author(s):  
M. Kamp ◽  
M. Mayer ◽  
A. Pelzmann ◽  
K. J. Ebeling
Keyword(s):  
Material Properties ◽  
Group Iii Nitrides ◽  
Growth Mechanisms ◽  
Mbe Growth ◽  
Group Iii ◽  
Surface Cracking ◽  
Homoepitaxial Growth ◽  
N Doping

ABSTRACTWith the use of ammonia as nitrogen precursor for Group III-Nitrides in an on surface cracking (OSC) approach, MBE becomes a serious competitor to MOVPE. Homoepitaxial GaN exhibits record linewidths of 0.5 meV in PL (4K), whereas GaN grown on c-plane sapphire also reveals reasonable material properties (PL linewidth ≈ 5 meV, n ≈ 1017 cm-3 , μ 220 cm2/Vs). Beside results on hetero- and homoepitaxial growth of GaN, insights into the growth mechanisms are presented. The growth of ternary nitrides is discussed, p- and n-doping as well as first LED results are reported.

Fundamentals, Material Properties and Device Performances in GaN MBE using On-Surface Cracking of Ammonia

1997 ◽  
Vol 2 ◽  
Author(s):  
Markus Kamp ◽  
M. Mayer ◽  
A. Pelzmann ◽  
K. J. Ebeling
Keyword(s):  
Molecular Beam Epitaxy ◽  
Material Properties ◽  
Molecular Beam ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Surface Cracking ◽  
Organic Vapor ◽  
N Doping ◽  
Metal Organic ◽  
Uv Leds

Ammonia is investigated as nitrogen precursor for molecular beam epitaxy of group III nitrides. With the particular on-surface cracking approach, NH3 is dissociated directly on the growing surface. By this technique, molecular beam epitaxy becomes a serious competitor to metal organic vapor phase epitaxy. Thermodynamic calculations as well as experimental results reveal insights into the growth mechanisms and its differences to the conventional plasma approach. With this knowledge, homoepitaxially GaN can be grown with record linewidths of 0.5 meV in photoluminescence (4 K). GaN layers on c-plane sapphire also reveal reasonable material properties (photoluminescence linewidth 5 meV, n ≈ 1017 cm−3, μ ≈ 220 cm2/Vs). Beside GaN growth, p- and n-doping of GaN as well as the growth of ternary nitrides are discussed. Using the presented ammonia approach UV-LEDs emitting at 370 nm with linewidths as narrow as 12 nm have been achieved.

In situ measurement of adsorbed nitrogen atoms for PA-MBE growth of group III nitrides on Si

2011 ◽  
Vol 8 (5) ◽  
pp. 1491-1494
Author(s):  
Tadashi Ohachi ◽  
Nobuhiko Yamabe ◽  
Yuka Yamamoto ◽  
Motoi Wada ◽  
Osamu Ariyada
Keyword(s):  
Group Iii Nitrides ◽  
In Situ Measurement ◽  
Mbe Growth ◽  
Group Iii ◽  
Adsorbed Nitrogen

Plasma-assisted MBE growth of group-III nitrides: from basics to device applications

2002 ◽  
Vol 93 (1-3) ◽  
pp. 189-196 ◽  
Author(s):  
M.A Sánchez-Garcı́a ◽  
J.L Pau ◽  
F Naranjo ◽  
A Jiménez ◽  
S Fernández ◽  
...  
Keyword(s):  
Group Iii Nitrides ◽  
Mbe Growth ◽  
Group Iii ◽  
Device Applications

Control of active nitrogen species used for PA-MBE growth of group III nitrides on Si

2011 ◽  
Vol 318 (1) ◽  
pp. 468-473 ◽  
Author(s):  
Tadashi Ohachi ◽  
Nobuhiko Yamabe ◽  
Yuka Yamamoto ◽  
Motoi Wada ◽  
Osamu Ariyada
Keyword(s):  
Group Iii Nitrides ◽  
Nitrogen Species ◽  
Active Nitrogen ◽  
Mbe Growth ◽  
Group Iii

Plasma characteristics and the growth of group III-nitrides by metalorganic molecular beam epitaxy

1997 ◽  
Vol 26 (11) ◽  
pp. 1266-1269 ◽  
Author(s):  
J. D. Mackenzie ◽  
L. Abbaschian ◽  
C. R. Abernathy ◽  
S. M. Donovan ◽  
S. J. Pearton ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group Iii Nitrides ◽  
Group Iii ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Plasma Characteristics

Low-density nanoporous phases of group-III nitrides built from sodalite cage clusters

2013 ◽  
Vol 15 (21) ◽  
pp. 8186 ◽  
Author(s):  
Zhifeng Liu ◽  
Xinqiang Wang ◽  
Gaobin Liu ◽  
Ping Zhou ◽  
Jian Sui ◽  
...  
Keyword(s):  
Group Iii Nitrides ◽  
Low Density ◽  
Group Iii

Group III Nitrides

2017 ◽  
pp. 209-228
Author(s):  
Ferdinand Scholz
Keyword(s):  
Group Iii Nitrides ◽  
Group Iii

Growth Kinetics and Thermal Stress in AlN Bulk Crystal Growth

2002 ◽  
Author(s):  
Bei Wu ◽  
Ronghui Ma ◽  
Hui Zhang ◽  
Michael Dudley ◽  
Raoul Schlesser ◽  
...  
Keyword(s):  
Thermal Stress ◽  
Crystal Growth ◽  
Temperature Distribution ◽  
Stress Level ◽  
Grown Crystal ◽  
Power Level ◽  
Chemical Species ◽  
Group Iii Nitrides ◽  
Minor Effect ◽  
Group Iii

Group III nitrides, such as GaN, AlN and InGaN, have attracted a lot of attention due to the development of blue-green and ultraviolet light emitting diodes (LEDs) and lasers. In this paper, an integrated model has developed based on the conservation of momentum, mass, chemical species and energy together with necessary boundary conditions that account for heterogeneous chemical reactions both at the source and seed surfaces. The simulation results have been compared with temperature measurements for different power levels and flow rates in a reactor specially designed for nitride crystal growth at NCSU. It is evident that the heat power level affects the entire temperature distribution greatly while the flow rate has minor effect on the temperature distribution. The results also show that the overall thermal stress level is higher than the critical resolved shear stress, which means thermal elastic stress can be a major source of dislocation density in the as-grown crystal. The stress level is strongly dependent on the temperature gradient in the as-grown crystal. Results are correlated well with defects showing in an X-ray topograph for the AlN wafer.

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