Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition

1999 ◽  
Vol 61-62 ◽  
pp. 176-178 ◽  
Author(s):  
A.N Vorob’ev ◽  
A.E Komissarov ◽  
A.S Segal ◽  
Yu.N Makarov ◽  
S.Yu Karpov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Modeling Analysis ◽  
Phase Nucleation

Effect of gas-phase nucleation on chemical vapor deposition of silicon carbide

2000 ◽  
Vol 211 (1-4) ◽  
pp. 343-346 ◽  
Author(s):  
A.N Vorob'ev ◽  
S.Yu Karpov ◽  
A.I Zhmakin ◽  
A.A Lovtsus ◽  
Yu.N Makarov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Phase Nucleation

Modeling of gas phase nucleation during silicon carbide chemical vapor deposition

2000 ◽  
Vol 9 (3-6) ◽  
pp. 472-475 ◽  
Author(s):  
A.N. Vorob'ev ◽  
S.Yu. Karpov ◽  
O.V. Bord ◽  
A.I. Zhmakin ◽  
A.A. Lovtsus ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Phase Nucleation

Homogeneous Gas Phase Nucleation of Silane in Low Pressure Chemical Vapor Deposition (LPCVD)

1988 ◽  
Vol 135 (9) ◽  
pp. 2378-2379 ◽  
Author(s):  
Z. M. Qian ◽  
H. Michiel ◽  
A. Van Ammel ◽  
J. Nijs ◽  
R. Mertens
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Low Pressure ◽  
Pressure Chemical ◽  
Phase Nucleation

Fundamental Evaluation of Gas-Phase Elementary Reaction Models for Silicon Carbide Chemical Vapor Deposition

2017 ◽  
Vol 6 (7) ◽  
pp. P399-P404 ◽  
Author(s):  
Yuichi Funato ◽  
Noboru Sato ◽  
Yasuyuki Fukushima ◽  
Hidetoshi Sugiura ◽  
Takeshi Momose ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Elementary Reaction ◽  
Reaction Models

Gas-Phase Modeling of Chlorine-Based Chemical Vapor Deposition of Silicon Carbide

2012 ◽  
Vol 12 (4) ◽  
pp. 1977-1984 ◽  
Author(s):  
Stefano Leone ◽  
Olof Kordina ◽  
Anne Henry ◽  
Shin-ichi Nishizawa ◽  
Örjan Danielsson ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Chemical Vapor

Metallorganic Chemical Vapor Deposition of Ir Films With Iridium Acetylacetonate and Carbonyl Precursors

1998 ◽  
Vol 541 ◽  
Author(s):  
Y.-M. Sun ◽  
J. Endle ◽  
K. Smith ◽  
J. G. Ekerdt ◽  
R. L. Hance ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Gas Phase ◽  
Vapor Deposition ◽  
Film Growth ◽  
Chemical Vapor ◽  
Film Deposition ◽  
Film Deposition Rate ◽  
Phase Nucleation ◽  
Temperature Programmed ◽  
Reactive Gas

AbstractIridium acetylacetonate, dicarbonylacetylacetonato iridium, and tetrakisiridium dodecacarbonyl (iridium carbonyl) have been evaluated for metallorganic chemical vapor deposition (CVD) of pure iridium films. Temperature programmed mass spectroscopy reveals that iridium tris-acetylacetonate and dicarbonylacetylactonato iridium have high thermal stability and sublime at 200 and 100 °C in vacuum, respectively. Iridium carbonyl decomposes upon sublimation at temperatures above 120 °C. Pure CVD Ir films were obtained using iridium carbonyl; however, carbon is incorporated into the iridium films with the iridium trisacetylacetonate and dicarbonylacetylactonato iridium precursors unless a reactive gas, such as oxygen is co-dosed. Co-dosed oxygen also increases the film deposition rate and significantly decreases the film growth temperatures. Particles were found on the films grown with iridium carbonyl between 280 to 400 °C, indicating that gas phase nucleation occurred during deposition.

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