Residual-stress relaxation in polysilicon thin films by high-temperature rapid thermal annealing

1998 ◽  
Vol 64 (1) ◽  
pp. 109-115 ◽  
Author(s):  
Xin Zhang ◽  
Tong-Yi Zhang ◽  
Man Wong ◽  
Yitshak Zohar
1998 ◽  
Vol 546 ◽  
Author(s):  
Xin Zhang ◽  
Tong-Yi Zhang ◽  
Yitshak Zohar

AbstractThe residual stress in doped and undoped polysilicon films, before and after rapid thermal annealing (RTA), is investigated using both wafer-curvature and micro-rotating structures techniques. Microstructure characterization has been conducted as well to understand the mechanism of the stress evolution. The results show that the compressive residual stresses in undoped polysilicon films can be reduced or eliminated within a few seconds RTA. Surface nitridation and grain growth are identified as the mechanisms responsible for the stress evolution.


2021 ◽  
Vol 1016 ◽  
pp. 819-825
Author(s):  
Li Na Yu ◽  
Kazuyoshi Saida ◽  
Masahito Mochizuki ◽  
Kazutoshi Nishimoto ◽  
Naoki Chigusa

Stress corrosion cracking (SCC) is one of serious aging degradation problems for the Alloy 600 components of pressurized water reactors (PWRs). In order to prevent SCC, various methods such as water jet peening (WJP), laser peening (LP), surface polishing have been used to introduce compressive stresses at the surfaces of the PWR components. However, it has been reported that such compressive residual stress introduced by these methods might be relaxed during the practical operation, because of high temperature environment. In this study, the hardness reduction behavior of the Alloy 600 processed by LP, Buff and WJP in the thermal aging process has been investigated to estimate the stability of the residual stress improving effect by each method, based on the fact that there is a correlation between the compressive residual stress relaxation and the decrease of hardness. The behavior of the residual stress relaxation in the processed materials in the high temperature environment has been discussed with kinetic analysis.


1998 ◽  
Vol 32 (10) ◽  
pp. 1048-1053 ◽  
Author(s):  
N. I. Katsavets ◽  
G. M. Laws ◽  
I. Harrison ◽  
E. C. Larkins ◽  
T. M. Benson ◽  
...  

1996 ◽  
Vol 68 (2) ◽  
pp. 200-202 ◽  
Author(s):  
J. C. Zolper ◽  
M. Hagerott Crawford ◽  
A. J. Howard ◽  
J. Ramer ◽  
S. D. Hersee

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