Electrical properties of PECVD amorphous silicon—carbon alloys from amorphous—crystalline heterojunctions

1997 ◽  
Vol 6 (10) ◽  
pp. 1555-1558 ◽  
Author(s):  
L.F. Marsal ◽  
J. Pallarès ◽  
X. Correig ◽  
M. Domínguez ◽  
D. Bardés ◽  
...  
1993 ◽  
Vol 297 ◽  
Author(s):  
J. Bertomeu ◽  
J. Puigdollers ◽  
J.M. Asensi ◽  
J.C. Delgado ◽  
J. Andreu

This paper deals with the electrical properties in the parallel direction of compositionally modulated amorphous silicon/amorphous silicon-carbon multilayers. Conductivity of three series of samples with varying well and barrier thicknesses is studied. The results show that dark conductivity decreases when reducing a-Si:H layer thickness. This is interpreted as an alloy effect at interfaces. The role of the a-Si1-xCx:H layers in the photoconductivity decrease observed in series with variable mean composition and constant well thickness is discussed


2003 ◽  
Vol 12 (3-7) ◽  
pp. 1213-1219 ◽  
Author(s):  
Y.C. Chou ◽  
S. Chattopadhyay ◽  
L.C. Chen ◽  
Y.F. Chen ◽  
K.H. Chen

1981 ◽  
Vol 42 (C4) ◽  
pp. C4-663-C4-666
Author(s):  
X. B. Liao ◽  
G. L. Kong ◽  
X. R. Yang ◽  
P. D. Wang ◽  
Y. Q. Chao ◽  
...  

1990 ◽  
Vol 67 (1) ◽  
pp. 443-447 ◽  
Author(s):  
A. K. Darzi ◽  
U. Eicker ◽  
B. S. Wherrett ◽  
J. I. B. Wilson

1970 ◽  
Vol 1 (6) ◽  
pp. 2632-2641 ◽  
Author(s):  
M. H. Brodsky ◽  
R. S. Title ◽  
K. Weiser ◽  
G. D. Pettit

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