Parallel Conduction in a-Si:H/a-Si1−xCx:H Multilayers

This paper deals with the electrical properties in the parallel direction of compositionally modulated amorphous silicon/amorphous silicon-carbon multilayers. Conductivity of three series of samples with varying well and barrier thicknesses is studied. The results show that dark conductivity decreases when reducing a-Si:H layer thickness. This is interpreted as an alloy effect at interfaces. The role of the a-Si1-xCx:H layers in the photoconductivity decrease observed in series with variable mean composition and constant well thickness is discussed

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Planar and Perpendicular Conductivity of Doping Modulated Amorphous Silicon Multilayers

MRS Proceedings ◽

10.1557/proc-70-727 ◽

1986 ◽

Vol 70 ◽

Author(s):

H. Steemers ◽

I. Chen ◽

J. Mort ◽

F. Jansen ◽

M. Morgan ◽

...

Keyword(s):

Theoretical Analysis ◽

Space Charge ◽

Amorphous Silicon ◽

Layer Thickness ◽

Critical Value ◽

Dark Conductivity ◽

Charge Doping ◽

Phosphorus Doped

ABSTRACTThe conductivity of a-Si:H multilayers consisting of alternating boron and phosphorus doped layers has been studied as a function of sub-layer thickness. The planar and perpendicular dark conductivity is compared with theoretical analysis of space-charge doping in these structures and this effect is found to dominate the transport as the sub-layer thickness is reduced below a critical value

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Improving the Microstructure and Electrical Properties of Aluminum Induced Polysilicon Thin Films Using Silicon Nitride Capping Layer

Journal of Nanomaterials ◽

10.1155/2014/342478 ◽

2014 ◽

Vol 2014 ◽

pp. 1-9 ◽

Cited By ~ 4

Author(s):

Min-Hang Weng ◽

Cheng-Tang Pan ◽

Chien-Wei Huang ◽

Ru-Yuan Yang

Keyword(s):

Silicon Nitride ◽

Electrical Properties ◽

Amorphous Silicon ◽

Grain Growth ◽

Silicon Film ◽

Silicon Layer ◽

Optical Microscope ◽

Dark Conductivity ◽

Capping Layer ◽

Short Annealing

We investigated the capping layer effect of SiNx(silicon nitride) on the microstructure, electrical, and optical properties of poly-Si (polycrystalline silicon) prepared by aluminum induced crystallization (AIC). The primary multilayer structure comprised Al (30 nm)/SiNx(20 nm)/a-Si (amorphous silicon) layer (100 nm)/ITO coated glass and was then annealed in a low annealing temperature of 350°C with different annealing times, 15, 30, 45, and 60 min. The crystallization properties were analyzed and verified by X-ray diffraction (XRD) and Raman spectra. The grain growth was analyzed via optical microscope (OM) and scanning electron microscopy (SEM). The improved electrical properties such as Hall mobility, resistivity, and dark conductivity were investigated by using Hall and current-voltage (I-V) measurements. The results show that the amorphous silicon film has been effectively induced even at a low temperature of 350°C and a short annealing time of 15 min and indicate that the SiNxcapping layer can improve the grain growth and reduce the metal content in the induced poly-Si film. It is found that the large grain size is over 20 μm and the carrier mobility values are over 80 cm2/V-s.

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Deposition of Device Quality Amorphous Silicon by Hot-Wire CVD

MRS Proceedings ◽

10.1557/proc-467-645 ◽

1997 ◽

Vol 467 ◽

Cited By ~ 8

Author(s):

K. F. Feenstra ◽

C. H. M. Van Der Werf ◽

E. C. Molenbroek ◽

R. E. I. Schropp

Keyword(s):

Growth Rate ◽

Electrical Properties ◽

Amorphous Silicon ◽

Diffusion Length ◽

Hydrogenated Amorphous Silicon ◽

Dark Conductivity ◽

Hot Wire ◽

Tungsten Filaments ◽

Wire Method ◽

Hydrogenated Amorphous

ABSTRACTIn this paper we present the results of the optimization of hydrogenated amorphous silicon films deposited by the hot-wire method in a larger area system. Using a two-wire design, we succeeded in depositing films that exhibit uniform electrical properties over the whole 4” x 4” Corning 7059 glass substrate. At a substrate temperature of 430 °C. and a pressure of 20 μbar we obtained a growth rate of ∼2 nm/s. The temperature of the tungsten filaments was kept at 1850 °C. The values for the photoconductivity and dark conductivity were 8.9×10−6 S/cm and 1.6×10−10 S/cm respectively, whereas the ambipolar diffusion length, as measured with the Steady-State Photocarrier Grating technique (SSPG), amounted to 145 nm. This value is higher than for our device quality glow-discharge (GD) films, which yield devices with efficiencies higher than 10%. The hydrogen content was 9.5%.We report on the density-of-states (DOS) distribution in the films, which was measured with the techniques of Thermally Stimulated Conductivity (TSC) and Constant Photocurrent Method (CPM). Furthermore, we describe the behavior of the electrical properties on light-induced degradation. Finally, we incorporated these films in solar cells, using conventional GD doped layers. Preliminary SS/n-i-p/ITO devices yielded efficiencies in excess of 3% under 100 mW/cm2 AM 1.5 illumination. Further work concerning the optimization of the interfaces is in progress.

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Influence of the layer thickness and hydrogen dilution on electrical properties of large area amorphous silicon p–i–n solar cell

Solar Energy Materials and Solar Cells ◽

10.1016/j.solmat.2004.08.014 ◽

2005 ◽

Vol 87 (1-4) ◽

pp. 349-355 ◽

Cited By ~ 5

Author(s):

L. Raniero ◽

N. Martins ◽

P. Canhola ◽

S. Zhang ◽

S. Pereira ◽

...

Keyword(s):

Solar Cell ◽

Electrical Properties ◽

Amorphous Silicon ◽

Layer Thickness ◽

Large Area ◽

Hydrogen Dilution

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Electrical properties of PECVD amorphous silicon—carbon alloys from amorphous—crystalline heterojunctions

Diamond and Related Materials ◽

10.1016/s0925-9635(97)00054-x ◽

1997 ◽

Vol 6 (10) ◽

pp. 1555-1558 ◽

Cited By ~ 7

Author(s):

L.F. Marsal ◽

J. Pallarès ◽

X. Correig ◽

M. Domínguez ◽

D. Bardés ◽

...

Keyword(s):

Electrical Properties ◽

Amorphous Silicon ◽

Silicon Carbon

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Doping and electrical properties of amorphous silicon carbon nitride films

Diamond and Related Materials ◽

10.1016/s0925-9635(02)00393-x ◽

2003 ◽

Vol 12 (3-7) ◽

pp. 1213-1219 ◽

Cited By ~ 3

Author(s):

Y.C. Chou ◽

S. Chattopadhyay ◽

L.C. Chen ◽

Y.F. Chen ◽

K.H. Chen

Keyword(s):

Electrical Properties ◽

Amorphous Silicon ◽

Carbon Nitride ◽

Silicon Carbon ◽

Silicon Carbon Nitride

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Influence of Hydrogen Dilution on Electrical Properties of Amorphous Silicon Thin Films Deposited on Glass Substrates

Advanced Materials Research ◽

10.4028/www.scientific.net/amr.221.117 ◽

2011 ◽

Vol 221 ◽

pp. 117-122

Author(s):

Ying Ge Li ◽

Dong Xing Du

Keyword(s):

Thin Film ◽

Thin Films ◽

Electrical Properties ◽

Amorphous Silicon ◽

Chemical Vapor ◽

Dark Conductivity ◽

Thin Layers ◽

Glass Substrates ◽

Silicon Thin Films ◽

Hydrogen Dilution

Thin film Amorphous Silicon materials have found wide application in photovoltaic industry. In this paper, thin layers (around 300nm) of intrinsic hydrogenated amorphous silicon (a-Si:H) are fabricated on glass (Corning Eagle2000TM) substrates by employing plasma enhanced chemical vapor deposition (PECVD) system with gas sources of silane and hydrogen. The deposited thin films are proven to be material of amorphous silicon by Raman spectroscopy measurement and their electronic transport properties are thoroughly characterized in terms of photoconductivity, dark conductivity and photo response. The effect of Hydrogen dilution on electrical properties are investigated for a-Si:H thin films deposited in the temperatures range of 150~200°C. Results indicate that a-Si:H thin films on glass substrate owns device-quality electrical properties and could be applied on fabricating thin film solar cells as the absorber layer material and on other photovoltaic or photo electronic devices.

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