Phase evolution and densification behavior of PBN ceramics

1999 ◽  
Vol 19 (6-7) ◽  
pp. 1057-1060 ◽  
Author(s):  
C.V do Carmo ◽  
R.N de Paula ◽  
J.M Póvoa ◽  
D Garcia ◽  
J.A Eiras
2020 ◽  
Vol 240 ◽  
pp. 122249 ◽  
Author(s):  
Zhengzhuo Xiong ◽  
Jinwen Ye ◽  
Ying Liu ◽  
Xiaojiao Yang ◽  
Qian Cao

2020 ◽  
Vol 40 (12) ◽  
pp. 3906-3917
Author(s):  
Yingchun Shan ◽  
Ping Li ◽  
Xiannian Sun ◽  
Xiaodong He ◽  
Changqing Hong ◽  
...  

2014 ◽  
Vol 633 ◽  
pp. 340-343
Author(s):  
Yue Xu ◽  
Ren Li Fu ◽  
Juan Li ◽  
Zhen Xiao Fu ◽  
Hong Juan Su

The effect of LnAlO3 (Ln = Nd, Sm) additives on the densification, phase evolution, microstructure and dielectric properties of BaO-Nd2O3-5TiO2 (BNT5) ceramics was investigated. The LnAlO3 (Ln = Nd, Sm) had greatly influence on the densification behavior of the BNT5 ceramics and the grain sizes of BNT5 ceramics could be effectively refined by LnAlO3 additive. The microstructure of BNT5 ceramics was transformed from quasi-rectangular grain to columnar grain while the content of LnAlO3 was increasing. The dielectric constant (εr) and the temperature coefficient of resonant frequency (τf) were reduced with the increase of LnAlO3 content, whereas the Q×f values showed a non-linear behaviour with LnAlO3 content increasing. The BNT5 ceramics doped with 12.5 wt% SmAlO3, sintered at 1320°C for 4 h, had the excellent dielectric properties of εr = 62.78, Q×f = 11108 GHz and τf = -1.55 ppm/°.


2019 ◽  
Vol 771 ◽  
pp. 33-41 ◽  
Author(s):  
Xiaowei Chen ◽  
Lin Zhang ◽  
Ye Liu ◽  
Xiaoyong Gao ◽  
Dan Li ◽  
...  

2017 ◽  
Vol 5 (4) ◽  
pp. 452-459
Author(s):  
Zhangfu Yang ◽  
Liqiang Zhang ◽  
Qinglin Shang ◽  
Jingjing Yuan ◽  
Yin Liu ◽  
...  

2019 ◽  
Author(s):  
Je-Ruei Wen ◽  
Benjamin Roman ◽  
Freddy Rodriguez Ortiz ◽  
Noel Mireles Villegas ◽  
Nicholas Porcellino ◽  
...  

Lack of detailed understanding of the growth mechanism of CsPbBr3 nanocrystals has hindered sophisticated morphological and chemical control of this important emerging optoelectronic material. Here, we have elucidated the growth mechanism by slowing the reaction kinetics. When 1-bromohexane is used as an alternative halide source, bromide is slowly released into the reaction mixture, extending the reaction time from ~3 seconds to greater than 20 minutes. This enables us to monitor the phase evolution of products over the course of reaction, revealing that CsBr is the initial species formed, followed by Cs4PbBr6, and finally CsPbBr3. Further, formation of monodisperse CsBr nanocrystals is demonstrated in a bromide-deficient and lead-abundant solution. The CsBr can only be transformed into CsPbBr3 nanocubes if additional bromide is added. Our results indicate a fundamentally different growth mechanism for CsPbBr3 in comparison with more established semiconductor nanocrystal systems and reveal the critical role of the chemical availability of bromide for the growth reactions.<br>


2010 ◽  
Vol 204 (8) ◽  
pp. 1236-1246 ◽  
Author(s):  
Romain d'Haese ◽  
Lech Pawlowski ◽  
Muriel Bigan ◽  
Roman Jaworski ◽  
Marc Martel

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